JPH0339998B2 - - Google Patents
Info
- Publication number
- JPH0339998B2 JPH0339998B2 JP57124118A JP12411882A JPH0339998B2 JP H0339998 B2 JPH0339998 B2 JP H0339998B2 JP 57124118 A JP57124118 A JP 57124118A JP 12411882 A JP12411882 A JP 12411882A JP H0339998 B2 JPH0339998 B2 JP H0339998B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- oxygen
- oxygen concentration
- atoms
- defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 44
- 229910052760 oxygen Inorganic materials 0.000 claims description 44
- 239000001301 oxygen Substances 0.000 claims description 44
- 238000000034 method Methods 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 46
- 230000007547 defect Effects 0.000 description 19
- 125000004429 atom Chemical group 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001000 micrograph Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12411882A JPS5918198A (ja) | 1982-07-16 | 1982-07-16 | デバイス基板用単結晶シリコン |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12411882A JPS5918198A (ja) | 1982-07-16 | 1982-07-16 | デバイス基板用単結晶シリコン |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5918198A JPS5918198A (ja) | 1984-01-30 |
| JPH0339998B2 true JPH0339998B2 (ko) | 1991-06-17 |
Family
ID=14877364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12411882A Granted JPS5918198A (ja) | 1982-07-16 | 1982-07-16 | デバイス基板用単結晶シリコン |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5918198A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3624827B2 (ja) * | 2000-12-20 | 2005-03-02 | 三菱住友シリコン株式会社 | シリコン単結晶の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329677A (en) * | 1976-08-30 | 1978-03-20 | Burroughs Corp | Method of and apparatus for chemically treating specimen only on one side thereof |
| JPS5617315A (en) * | 1979-07-24 | 1981-02-19 | Nippon Telegr & Teleph Corp <Ntt> | Connector for optical signal |
-
1982
- 1982-07-16 JP JP12411882A patent/JPS5918198A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5329677A (en) * | 1976-08-30 | 1978-03-20 | Burroughs Corp | Method of and apparatus for chemically treating specimen only on one side thereof |
| JPS5617315A (en) * | 1979-07-24 | 1981-02-19 | Nippon Telegr & Teleph Corp <Ntt> | Connector for optical signal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5918198A (ja) | 1984-01-30 |
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