JPH0336294B2 - - Google Patents
Info
- Publication number
- JPH0336294B2 JPH0336294B2 JP57172011A JP17201182A JPH0336294B2 JP H0336294 B2 JPH0336294 B2 JP H0336294B2 JP 57172011 A JP57172011 A JP 57172011A JP 17201182 A JP17201182 A JP 17201182A JP H0336294 B2 JPH0336294 B2 JP H0336294B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- exposure
- electron beam
- patterns
- exposure pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172011A JPS5961133A (ja) | 1982-09-30 | 1982-09-30 | 電子ビ−ム露光方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57172011A JPS5961133A (ja) | 1982-09-30 | 1982-09-30 | 電子ビ−ム露光方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5961133A JPS5961133A (ja) | 1984-04-07 |
| JPH0336294B2 true JPH0336294B2 (enrdf_load_stackoverflow) | 1991-05-31 |
Family
ID=15933870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57172011A Granted JPS5961133A (ja) | 1982-09-30 | 1982-09-30 | 電子ビ−ム露光方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5961133A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5393634A (en) * | 1993-05-27 | 1995-02-28 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Continuous phase and amplitude holographic elements |
-
1982
- 1982-09-30 JP JP57172011A patent/JPS5961133A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5961133A (ja) | 1984-04-07 |
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