JPS6246058B2 - - Google Patents

Info

Publication number
JPS6246058B2
JPS6246058B2 JP16249481A JP16249481A JPS6246058B2 JP S6246058 B2 JPS6246058 B2 JP S6246058B2 JP 16249481 A JP16249481 A JP 16249481A JP 16249481 A JP16249481 A JP 16249481A JP S6246058 B2 JPS6246058 B2 JP S6246058B2
Authority
JP
Japan
Prior art keywords
pattern
electron beam
beam irradiation
irradiation density
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16249481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5863135A (ja
Inventor
Yasuhide Machida
Shigeru Furuya
Noriaki Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16249481A priority Critical patent/JPS5863135A/ja
Publication of JPS5863135A publication Critical patent/JPS5863135A/ja
Publication of JPS6246058B2 publication Critical patent/JPS6246058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
JP16249481A 1981-10-12 1981-10-12 電子ビ−ム露光方法 Granted JPS5863135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16249481A JPS5863135A (ja) 1981-10-12 1981-10-12 電子ビ−ム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16249481A JPS5863135A (ja) 1981-10-12 1981-10-12 電子ビ−ム露光方法

Publications (2)

Publication Number Publication Date
JPS5863135A JPS5863135A (ja) 1983-04-14
JPS6246058B2 true JPS6246058B2 (enrdf_load_stackoverflow) 1987-09-30

Family

ID=15755682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16249481A Granted JPS5863135A (ja) 1981-10-12 1981-10-12 電子ビ−ム露光方法

Country Status (1)

Country Link
JP (1) JPS5863135A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3177599B2 (ja) 1998-06-12 2001-06-18 松下電子工業株式会社 パターン形成方法

Also Published As

Publication number Publication date
JPS5863135A (ja) 1983-04-14

Similar Documents

Publication Publication Date Title
KR100807957B1 (ko) 빔 조사량 연산 방법, 묘화 방법, 기록 매체 및 묘화 장치
US20090057575A1 (en) Charged particle beam lithography apparatus and charged particle beam lithography method
US10950413B2 (en) Electron beam irradiation method, electron beam irradiation apparatus, and computer readable non-transitory storage medium
JPS6112068A (ja) 電子ビームリソグラフ装置における近接効果補正方法
JPS6234136B2 (enrdf_load_stackoverflow)
JPS6246059B2 (enrdf_load_stackoverflow)
JPH07321011A (ja) 電子ビームの露光方法
JPS6246058B2 (enrdf_load_stackoverflow)
CN1149643C (zh) 采用带电粒子束的图形绘制方法及其装置
KR102366045B1 (ko) 하전 입자 빔 묘화 방법 및 하전 입자 빔 묘화 장치
JPH0336293B2 (enrdf_load_stackoverflow)
JPH06267833A (ja) 電子ビーム描画方法
JPH05136033A (ja) パターン形成方法及びその装置
JPH0336292B2 (enrdf_load_stackoverflow)
JPH0727856B2 (ja) 電子ビ−ム描画方法
JPS6041223A (ja) 電子ビ−ム露光方法
JPS6262047B2 (enrdf_load_stackoverflow)
JPS5961133A (ja) 電子ビ−ム露光方法
JPS6314866B2 (enrdf_load_stackoverflow)
US20230290608A1 (en) Charged particle beam writing method, charged particle beam writing apparatus, and computer-readable recording medium
JPS6041222A (ja) 電子ビ−ム露光方法
JPH0336295B2 (enrdf_load_stackoverflow)
TW202326619A (zh) 描繪方法、原版製造方法及描繪裝置
JPS6041224A (ja) 電子ビ−ム露光方法
JPS61191027A (ja) 電子ビ−ム露光方法