Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
  • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
  • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
  • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
  • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
  • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
  • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
  • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
  • H01L27/0761—Vertical bipolar transistor in combination with diodes only
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/70—Bipolar devices
  • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
  • H01L29/73—Bipolar junction transistors
  • H01L29/732—Vertical transistors
  • H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Ceramic Engineering (AREA)
• Bipolar Transistors (AREA)
• Bipolar Integrated Circuits (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=19836098

Family Applications (2)

Family Applications Before (1)

Country Status (11)

Families Citing this family (11)

Citations (3)

Family Cites Families (6)

• 1980
  • 1980-11-03 NL NL8005995A patent/NL8005995A/nl not_active Application Discontinuation
• 1981
  • 1981-10-13 US US06/310,581 patent/US4530000A/en not_active Expired - Fee Related
  • 1981-10-28 DE DE3142644A patent/DE3142644C2/de not_active Expired
  • 1981-10-29 SE SE8106377D patent/SE8106377L/xx not_active Application Discontinuation
  • 1981-10-29 SE SE8106377A patent/SE457395B/sv not_active IP Right Cessation
  • 1981-10-29 CA CA000389056A patent/CA1173568A/en not_active Expired
  • 1981-10-30 IT IT24803/81A patent/IT1139664B/it active
  • 1981-10-30 GB GB8132751A patent/GB2086655B/en not_active Expired
  • 1981-10-30 AU AU76994/81A patent/AU545211B2/en not_active Ceased
  • 1981-10-30 FR FR8120434A patent/FR2493603B1/fr not_active Expired
  • 1981-10-30 JP JP56173170A patent/JPS57106075A/ja active Pending
  • 1981-11-02 AT AT0468281A patent/AT386907B/de not_active IP Right Cessation
• 1990
  • 1990-08-22 JP JP1990087079U patent/JPH0336132U/ja active Pending

Patent Citations (3)

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