JPH0334057B2 - - Google Patents

Info

Publication number
JPH0334057B2
JPH0334057B2 JP57050153A JP5015382A JPH0334057B2 JP H0334057 B2 JPH0334057 B2 JP H0334057B2 JP 57050153 A JP57050153 A JP 57050153A JP 5015382 A JP5015382 A JP 5015382A JP H0334057 B2 JPH0334057 B2 JP H0334057B2
Authority
JP
Japan
Prior art keywords
polymer
mol
film
resist
photosensitive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57050153A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58168047A (ja
Inventor
Hideo Ochi
Haruo Hatakeyama
Tomoyuki Kitaore
Ichiro Sugawara
Kotaro Nagasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Somar Corp
Original Assignee
Somar Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Somar Corp filed Critical Somar Corp
Priority to JP5015382A priority Critical patent/JPS58168047A/ja
Publication of JPS58168047A publication Critical patent/JPS58168047A/ja
Publication of JPH0334057B2 publication Critical patent/JPH0334057B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP5015382A 1982-03-30 1982-03-30 感光性材料 Granted JPS58168047A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5015382A JPS58168047A (ja) 1982-03-30 1982-03-30 感光性材料

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5015382A JPS58168047A (ja) 1982-03-30 1982-03-30 感光性材料

Publications (2)

Publication Number Publication Date
JPS58168047A JPS58168047A (ja) 1983-10-04
JPH0334057B2 true JPH0334057B2 (enrdf_load_html_response) 1991-05-21

Family

ID=12851233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5015382A Granted JPS58168047A (ja) 1982-03-30 1982-03-30 感光性材料

Country Status (1)

Country Link
JP (1) JPS58168047A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60129741A (ja) * 1983-12-16 1985-07-11 Japan Synthetic Rubber Co Ltd Ｘ線レジスト組成物
JPH0249011A (ja) * 1988-08-11 1990-02-19 Somar Corp 高エネルギー線加工用レジスト

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4130424A (en) * 1976-08-06 1978-12-19 Bell Telephone Laboratories, Incorporated Process using radiation curable epoxy containing resist and resultant product
FR2454472A1 (fr) * 1979-04-16 1980-11-14 Lubrizol Corp Sels acide polycarboxylique/amine, systeme aqueux les contenant et procede pour inhiber la corrosion des metaux
JPS57124731A (en) * 1981-01-28 1982-08-03 Nippon Telegr & Teleph Corp <Ntt> Negative type resist with dry etching resistance

Also Published As

Publication number Publication date
JPS58168047A (ja) 1983-10-04

Similar Documents

Publication Publication Date Title
JP4028131B2 (ja) フォトレジスト重合体とその製造方法、フォトレジスト組成物、及びフォトレジストパターンの形成方法
JPH0219847A (ja) ポジチブ及びネガチブ処理感放射線混合物及びレリーフパターンの作製方法
JPH05249683A (ja) 感放射線性組成物
JPH0218564A (ja) 感放射線混合物及びレリーフパターン作製方法
TW200530748A (en) Photoresist composition
JP4102010B2 (ja) 有機反射防止膜用組成物とその製造方法
JP4527827B2 (ja) フォトレジスト架橋剤、フォトレジスト組成物、フォトレジストパターン形成方法、および半導体素子
JPH0155445B2 (enrdf_load_html_response)
JPH0334057B2 (enrdf_load_html_response)
JP2825543B2 (ja) ネガ型放射線感応性樹脂組成物
JPH0249011A (ja) 高エネルギー線加工用レジスト
JPS63199715A (ja) ｏ−ニトロカルビノールエステル基を有する共重合体及び該共重合体を用いた２層レジスト並びに半導体素子の製法
CN1149341A (zh) 可干法显影的正性抗蚀剂
CN113219789A (zh) 一种星型ArF光刻胶成膜树脂及其制备方法和光刻胶组合物
JPS63271253A (ja) 高解像度ポジ型放射線感応性レジスト
JPS6361651B2 (enrdf_load_html_response)
JPH0216508B2 (enrdf_load_html_response)
JPH0480377B2 (enrdf_load_html_response)
JPS5828571B2 (ja) 微細加工用レジスト形成方法
JPH07196743A (ja) 放射線感光材料及びパターン形成方法
US4273858A (en) Resist material for micro-fabrication with unsaturated dicarboxylic moiety
JP2557817B2 (ja) 電離放射線感応ネガ型レジスト
JPS6358338B2 (enrdf_load_html_response)
EP0077056B1 (en) Negative-type resist sensitive to ionizing radiation
JPS649613B2 (enrdf_load_html_response)