JPH0334052B2 - - Google Patents
Info
- Publication number
- JPH0334052B2 JPH0334052B2 JP58019582A JP1958283A JPH0334052B2 JP H0334052 B2 JPH0334052 B2 JP H0334052B2 JP 58019582 A JP58019582 A JP 58019582A JP 1958283 A JP1958283 A JP 1958283A JP H0334052 B2 JPH0334052 B2 JP H0334052B2
- Authority
- JP
- Japan
- Prior art keywords
- resist
- lmr
- acetate
- dry etching
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- A—HUMAN NECESSITIES
- A21—BAKING; EDIBLE DOUGHS
- A21D—TREATMENT OF FLOUR OR DOUGH FOR BAKING, e.g. BY ADDITION OF MATERIALS; BAKING; BAKERY PRODUCTS
- A21D13/00—Finished or partly finished bakery products
- A21D13/10—Multi-layered products
- A21D13/16—Multi-layered pastry, e.g. puff pastry; Danish pastry or laminated dough
- A21D13/19—Multi-layered pastry, e.g. puff pastry; Danish pastry or laminated dough with fillings
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Food Science & Technology (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58019582A JPS59146047A (ja) | 1983-02-10 | 1983-02-10 | ネガ型レジストのパターン形成方法 |
US06/574,363 US4600684A (en) | 1983-02-10 | 1984-01-27 | Process for forming a negative resist using high energy beam |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58019582A JPS59146047A (ja) | 1983-02-10 | 1983-02-10 | ネガ型レジストのパターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59146047A JPS59146047A (ja) | 1984-08-21 |
JPH0334052B2 true JPH0334052B2 (en, 2012) | 1991-05-21 |
Family
ID=12003251
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58019582A Granted JPS59146047A (ja) | 1983-02-10 | 1983-02-10 | ネガ型レジストのパターン形成方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59146047A (en, 2012) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6045243A (ja) * | 1983-08-23 | 1985-03-11 | Oki Electric Ind Co Ltd | レジストパタ−ンの形成方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS548304A (en) * | 1977-06-20 | 1979-01-22 | Toyo Tire & Rubber Co Ltd | Radial tire |
JPS6029936B2 (ja) * | 1979-12-27 | 1985-07-13 | 富士通株式会社 | パタ−ン形成法 |
-
1983
- 1983-02-10 JP JP58019582A patent/JPS59146047A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59146047A (ja) | 1984-08-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2881969B2 (ja) | 放射線感光レジストとパターン形成方法 | |
CN111948904B (zh) | 光刻胶组合物、用它形成光刻图案的方法及其用途 | |
JP3691897B2 (ja) | レジスト材料及びレジストパターンの形成方法 | |
KR20010015280A (ko) | 포토레지스트패턴의 형성방법 | |
US5384220A (en) | Production of photolithographic structures | |
US6479212B1 (en) | Photosensitive resin, resist composition using the photosensitive resin, pattern formation method using the resist composition, device produced by the pattern formation method, and exposure method | |
US4383026A (en) | Accelerated particle lithographic processing and articles so produced | |
US4405707A (en) | Method of producing relief structures for integrated semiconductor circuits | |
JPH02248952A (ja) | 感光性組成物 | |
JPH0334052B2 (en, 2012) | ||
JPH0480377B2 (en, 2012) | ||
JPH07239558A (ja) | 現像液及びパターン形成方法 | |
US4600684A (en) | Process for forming a negative resist using high energy beam | |
JPS6248211B2 (en, 2012) | ||
JPH0334053B2 (en, 2012) | ||
JPH03223857A (ja) | パターン形成方法 | |
JPS6233737B2 (en, 2012) | ||
JPH07196743A (ja) | 放射線感光材料及びパターン形成方法 | |
US4954424A (en) | Pattern fabrication by radiation-induced graft copolymerization | |
JP2692059B2 (ja) | 電子線レジストパターンの形成方法 | |
JPS58214149A (ja) | 微細パタ−ン形成方法 | |
JP2856593B2 (ja) | レジストパターンの形成方法 | |
JPH0263114A (ja) | 半導体装置の製造方法 | |
JPS61136228A (ja) | フオトリソグラフ方法 | |
JPH0536782B2 (en, 2012) |