JPH0332228B2 - - Google Patents

Info

Publication number
JPH0332228B2
JPH0332228B2 JP56070939A JP7093981A JPH0332228B2 JP H0332228 B2 JPH0332228 B2 JP H0332228B2 JP 56070939 A JP56070939 A JP 56070939A JP 7093981 A JP7093981 A JP 7093981A JP H0332228 B2 JPH0332228 B2 JP H0332228B2
Authority
JP
Japan
Prior art keywords
electrically
layer
state
diffusion layer
conductive state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56070939A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57186356A (en
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP7093981A priority Critical patent/JPS57186356A/ja
Publication of JPS57186356A publication Critical patent/JPS57186356A/ja
Publication of JPH0332228B2 publication Critical patent/JPH0332228B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP7093981A 1981-05-12 1981-05-12 Semiconductor memory storage Granted JPS57186356A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7093981A JPS57186356A (en) 1981-05-12 1981-05-12 Semiconductor memory storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7093981A JPS57186356A (en) 1981-05-12 1981-05-12 Semiconductor memory storage

Publications (2)

Publication Number Publication Date
JPS57186356A JPS57186356A (en) 1982-11-16
JPH0332228B2 true JPH0332228B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-05-10

Family

ID=13445967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7093981A Granted JPS57186356A (en) 1981-05-12 1981-05-12 Semiconductor memory storage

Country Status (1)

Country Link
JP (1) JPS57186356A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188243A (ja) * 1985-10-18 1987-08-17 レヴイ　ガ−ズバ−グ 電気回路要素を選択的に接続するための方法および構造
WO1992007380A1 (fr) * 1990-10-15 1992-04-30 Seiko Epson Corporation Dispositif a semi-conducteur comprenant un circuit de commutation commute par la lumiere et procede de fabrication du dispositif
GB2382220A (en) * 2001-11-20 2003-05-21 Zarlink Semiconductor Ltd Polysilicon diode antifuse
JP2007230643A (ja) * 2006-03-03 2007-09-13 Dainippon Printing Co Ltd 非接触ｉｃタグ付きカップ状容器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5061730U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-10-09 1975-06-06

Also Published As

Publication number Publication date
JPS57186356A (en) 1982-11-16

Similar Documents

Publication Publication Date Title
US5210598A (en) Semiconductor element having a resistance state transition region of two-layer structure
JP3256603B2 (ja) 半導体装置及びその製造方法
KR0162073B1 (ko) 프로그램 가능한 저 임피던스 상호 접속 회로 소자
US4617723A (en) Method and device for creating an activatable conducting link in a semiconductor device
US3877049A (en) Electrodes for amorphous semiconductor switch devices and method of making the same
US5093711A (en) Semiconductor device
JPH04226068A (ja) 電気的プログラム可能な非融解型素子、該素子を含む半導体デバイス、及び該素子の形成方法
JPH0439232B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US5412245A (en) Self-aligned vertical antifuse
KR900002084B1 (ko) 반도체장치
KR0159450B1 (ko) 앤티퓨즈소자
US5661071A (en) Method of making an antifuse cell with tungsten silicide electrode
KR940008564B1 (ko) 반도체 소자 및 그 제조방법
JPH0332228B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2863767B2 (ja) 平面型アンチヒューズ素子の製造方法
JPH02288361A (ja) 半導体装置
JPS60236257A (ja) 半導体装置
JPH06310604A (ja) 半導体装置
JPH0127520B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0256815B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH02208962A (ja) 半導体装置
JP2870823B2 (ja) 半導体装置の製造方法
JPH0235769A (ja) 半導体装置
JPH0223654A (ja) 半導体装置
JPS641055B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)