JPH0330980B2 - - Google Patents

Info

Publication number
JPH0330980B2
JPH0330980B2 JP60049401A JP4940185A JPH0330980B2 JP H0330980 B2 JPH0330980 B2 JP H0330980B2 JP 60049401 A JP60049401 A JP 60049401A JP 4940185 A JP4940185 A JP 4940185A JP H0330980 B2 JPH0330980 B2 JP H0330980B2
Authority
JP
Japan
Prior art keywords
raw material
solution
distribution
material solution
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60049401A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61208828A (ja
Inventor
Mineo Wajima
Tsunehiro Unno
Taiichiro Konno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP60049401A priority Critical patent/JPS61208828A/ja
Publication of JPS61208828A publication Critical patent/JPS61208828A/ja
Publication of JPH0330980B2 publication Critical patent/JPH0330980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP60049401A 1985-03-14 1985-03-14 多層の液相エピタキシヤル成長方法 Granted JPS61208828A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60049401A JPS61208828A (ja) 1985-03-14 1985-03-14 多層の液相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60049401A JPS61208828A (ja) 1985-03-14 1985-03-14 多層の液相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS61208828A JPS61208828A (ja) 1986-09-17
JPH0330980B2 true JPH0330980B2 (enFirst) 1991-05-01

Family

ID=12830018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60049401A Granted JPS61208828A (ja) 1985-03-14 1985-03-14 多層の液相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS61208828A (enFirst)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48102779A (enFirst) * 1972-04-10 1973-12-24
JPS5651158A (en) * 1979-10-03 1981-05-08 Ricoh Co Ltd Reproducing method of binary picture
JPS5742211A (en) * 1980-08-28 1982-03-09 Nippon Gakki Seizo Kk Feedback amplifier

Also Published As

Publication number Publication date
JPS61208828A (ja) 1986-09-17

Similar Documents

Publication Publication Date Title
JPS63209122A (ja) 液相薄膜結晶成長方法及び装置
US4149914A (en) Method for depositing epitaxial monocrystalline semiconductive layers via sliding liquid phase epitaxy
US4052252A (en) Liquid phase epitaxial growth with interfacial temperature difference
JPH0330980B2 (enFirst)
JPS58120600A (ja) ３―ｖ族化合物半導体のエピタキシカル成長方法
JPS626338B2 (enFirst)
JPS5812230B2 (ja) エキソウエピタキシヤルセイチヨウホウホウ
JPS589794B2 (ja) 半導体の液相多層薄膜成長法および成長装置
JPH0196091A (ja) 半導体結晶の液相エピタキシャル成長装置
van Oirschot et al. LPE growth of DH laser structures with the double source method
JPH06291068A (ja) 液相エピタキシャル成長方法
JPH03136236A (ja) 液相エピタキシャル成長方法及び成長装置
JPS61281097A (ja) 半導体液相多層膜成長法
JPH0231492B2 (enFirst)
JPH0538063Y2 (enFirst)
JPS628008B2 (enFirst)
JPH0547683A (ja) 液相エピタキシー用融液の製造方法
JPH01153592A (ja) エピタキシャル成長用ボート
JPH0485819A (ja) 液相エピタキシャル成長装置
JPS643051B2 (enFirst)
JPS62241893A (ja) 液相エピタキシヤル成長方法
JPH04160092A (ja) 液相エピタキシヤル成長方法
JPH02133390A (ja) 多層エピタキシヤル成長方法及び成長装置
JPS5673700A (en) Liquid phase epitaxially growing method
JPS60145608A (ja) 液相エピタキシヤル成長方法