JPH0329752B2 - - Google Patents

Info

Publication number
JPH0329752B2
JPH0329752B2 JP60018744A JP1874485A JPH0329752B2 JP H0329752 B2 JPH0329752 B2 JP H0329752B2 JP 60018744 A JP60018744 A JP 60018744A JP 1874485 A JP1874485 A JP 1874485A JP H0329752 B2 JPH0329752 B2 JP H0329752B2
Authority
JP
Japan
Prior art keywords
crucible
heater
melt
crystal
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60018744A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61178490A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1874485A priority Critical patent/JPS61178490A/ja
Publication of JPS61178490A publication Critical patent/JPS61178490A/ja
Publication of JPH0329752B2 publication Critical patent/JPH0329752B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1874485A 1985-02-04 1985-02-04 単結晶引き上げ装置 Granted JPS61178490A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1874485A JPS61178490A (ja) 1985-02-04 1985-02-04 単結晶引き上げ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1874485A JPS61178490A (ja) 1985-02-04 1985-02-04 単結晶引き上げ装置

Publications (2)

Publication Number Publication Date
JPS61178490A JPS61178490A (ja) 1986-08-11
JPH0329752B2 true JPH0329752B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-04-25

Family

ID=11980162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1874485A Granted JPS61178490A (ja) 1985-02-04 1985-02-04 単結晶引き上げ装置

Country Status (1)

Country Link
JP (1) JPS61178490A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100588425B1 (ko) 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
DE10339792B4 (de) * 2003-03-27 2014-02-27 Siltronic Ag Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553312A (en) * 1978-06-15 1980-01-11 Toshiba Corp Production of oxide single crystal
JPS59174593A (ja) * 1983-03-25 1984-10-03 Toshiba Corp 単結晶製造装置用発熱抵抗体

Also Published As

Publication number Publication date
JPS61178490A (ja) 1986-08-11

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term