JPH032950B2 - - Google Patents

Info

Publication number
JPH032950B2
JPH032950B2 JP57166105A JP16610582A JPH032950B2 JP H032950 B2 JPH032950 B2 JP H032950B2 JP 57166105 A JP57166105 A JP 57166105A JP 16610582 A JP16610582 A JP 16610582A JP H032950 B2 JPH032950 B2 JP H032950B2
Authority
JP
Japan
Prior art keywords
gas
titanium
titanium silicide
silicide film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57166105A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5956574A (ja
Inventor
Yoshimi Shiotani
Mamoru Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16610582A priority Critical patent/JPS5956574A/ja
Publication of JPS5956574A publication Critical patent/JPS5956574A/ja
Publication of JPH032950B2 publication Critical patent/JPH032950B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP16610582A 1982-09-24 1982-09-24 チタン・シリサイド膜の形成方法 Granted JPS5956574A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16610582A JPS5956574A (ja) 1982-09-24 1982-09-24 チタン・シリサイド膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16610582A JPS5956574A (ja) 1982-09-24 1982-09-24 チタン・シリサイド膜の形成方法

Publications (2)

Publication Number Publication Date
JPS5956574A JPS5956574A (ja) 1984-04-02
JPH032950B2 true JPH032950B2 (enrdf_load_stackoverflow) 1991-01-17

Family

ID=15825102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16610582A Granted JPS5956574A (ja) 1982-09-24 1982-09-24 チタン・シリサイド膜の形成方法

Country Status (1)

Country Link
JP (1) JPS5956574A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4557943A (en) * 1983-10-31 1985-12-10 Advanced Semiconductor Materials America, Inc. Metal-silicide deposition using plasma-enhanced chemical vapor deposition
FR2623014B1 (fr) * 1987-11-09 1990-03-23 France Etat Procede de depot selectif d'un siliciure de metal refractaire sur des zones de silicium
US5167986A (en) * 1988-04-15 1992-12-01 Gordon Roy G Titanium silicide-coated glass windows

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100126A (en) * 1980-01-08 1981-08-11 Konishiroku Photo Ind Co Ltd Manufacture of amorphous silicon
JPS5767016A (en) * 1980-10-09 1982-04-23 Nippon Telegr & Teleph Corp <Ntt> Manufacture of thin silicon film

Also Published As

Publication number Publication date
JPS5956574A (ja) 1984-04-02

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