JPH0329177B2 - - Google Patents
Info
- Publication number
- JPH0329177B2 JPH0329177B2 JP58231363A JP23136383A JPH0329177B2 JP H0329177 B2 JPH0329177 B2 JP H0329177B2 JP 58231363 A JP58231363 A JP 58231363A JP 23136383 A JP23136383 A JP 23136383A JP H0329177 B2 JPH0329177 B2 JP H0329177B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit pattern
- light
- lsi wafer
- optical system
- polarized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000005286 illumination Methods 0.000 claims description 51
- 239000010410 layer Substances 0.000 claims description 38
- 230000007547 defect Effects 0.000 claims description 22
- 238000007689 inspection Methods 0.000 claims description 21
- 239000002344 surface layer Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 10
- 235000012431 wafers Nutrition 0.000 description 84
- 238000000034 method Methods 0.000 description 21
- 238000010586 diagram Methods 0.000 description 18
- 238000011179 visual inspection Methods 0.000 description 16
- 239000010409 thin film Substances 0.000 description 8
- 238000013461 design Methods 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58231363A JPS60124833A (ja) | 1983-12-09 | 1983-12-09 | 多層回路パターン検査装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58231363A JPS60124833A (ja) | 1983-12-09 | 1983-12-09 | 多層回路パターン検査装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60124833A JPS60124833A (ja) | 1985-07-03 |
JPH0329177B2 true JPH0329177B2 (zh) | 1991-04-23 |
Family
ID=16922443
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58231363A Granted JPS60124833A (ja) | 1983-12-09 | 1983-12-09 | 多層回路パターン検査装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60124833A (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5270222A (en) * | 1990-12-31 | 1993-12-14 | Texas Instruments Incorporated | Method and apparatus for semiconductor device fabrication diagnosis and prognosis |
JP6168383B2 (ja) * | 2012-12-27 | 2017-07-26 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 欠陥検査装置及び欠陥検査方法 |
JP6119785B2 (ja) * | 2015-03-17 | 2017-04-26 | 大日本印刷株式会社 | 異物検査装置、異物検査方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208153A (en) * | 1981-06-17 | 1982-12-21 | Hitachi Ltd | Inspecting method for defective aluminum pattern of semiconductor or the like |
JPS5852335A (ja) * | 1981-09-21 | 1983-03-28 | Tokuyama Soda Co Ltd | ポリプロピレン組成物 |
-
1983
- 1983-12-09 JP JP58231363A patent/JPS60124833A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57208153A (en) * | 1981-06-17 | 1982-12-21 | Hitachi Ltd | Inspecting method for defective aluminum pattern of semiconductor or the like |
JPS5852335A (ja) * | 1981-09-21 | 1983-03-28 | Tokuyama Soda Co Ltd | ポリプロピレン組成物 |
Also Published As
Publication number | Publication date |
---|---|
JPS60124833A (ja) | 1985-07-03 |
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