JPH0328836B2 - - Google Patents

Info

Publication number
JPH0328836B2
JPH0328836B2 JP20998982A JP20998982A JPH0328836B2 JP H0328836 B2 JPH0328836 B2 JP H0328836B2 JP 20998982 A JP20998982 A JP 20998982A JP 20998982 A JP20998982 A JP 20998982A JP H0328836 B2 JPH0328836 B2 JP H0328836B2
Authority
JP
Japan
Prior art keywords
diffusion region
drain diffusion
mos transistor
substrate
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP20998982A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59100570A (ja
Inventor
Teruyoshi Mihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP20998982A priority Critical patent/JPS59100570A/ja
Priority to DE8383111730T priority patent/DE3370245D1/de
Priority to EP83111730A priority patent/EP0110320B1/en
Publication of JPS59100570A publication Critical patent/JPS59100570A/ja
Publication of JPH0328836B2 publication Critical patent/JPH0328836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
JP20998982A 1982-11-27 1982-11-30 Ｍｏｓトランジスタ Granted JPS59100570A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP20998982A JPS59100570A (ja) 1982-11-30 1982-11-30 Ｍｏｓトランジスタ
DE8383111730T DE3370245D1 (de) 1982-11-27 1983-11-23 A mos transistor
EP83111730A EP0110320B1 (en) 1982-11-27 1983-11-23 A mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20998982A JPS59100570A (ja) 1982-11-30 1982-11-30 Ｍｏｓトランジスタ

Publications (2)

Publication Number Publication Date
JPS59100570A JPS59100570A (ja) 1984-06-09
JPH0328836B2 true JPH0328836B2 (tr) 1991-04-22

Family

ID=16582012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20998982A Granted JPS59100570A (ja) 1982-11-27 1982-11-30 Ｍｏｓトランジスタ

Country Status (1)

Country Link
JP (1) JPS59100570A (tr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222676A (ja) * 1986-03-25 1987-09-30 Nec Corp 高耐圧ｍｏｓトランジスタ
US4929991A (en) * 1987-11-12 1990-05-29 Siliconix Incorporated Rugged lateral DMOS transistor structure
JP2713496B2 (ja) * 1990-07-16 1998-02-16 松下電子工業株式会社 半導体装置
JPH04107871A (ja) * 1990-08-27 1992-04-09 Matsushita Electron Corp 半導体装置およびそれを用いたイグナイタ装置
JPH0955496A (ja) * 1995-08-17 1997-02-25 Oki Electric Ind Co Ltd 高耐圧ｍｏｓトランジスタ及びその製造方法

Also Published As

Publication number Publication date
JPS59100570A (ja) 1984-06-09

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