JPH0328071B2 - - Google Patents
Info
- Publication number
- JPH0328071B2 JPH0328071B2 JP56073546A JP7354681A JPH0328071B2 JP H0328071 B2 JPH0328071 B2 JP H0328071B2 JP 56073546 A JP56073546 A JP 56073546A JP 7354681 A JP7354681 A JP 7354681A JP H0328071 B2 JPH0328071 B2 JP H0328071B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- film
- memory cell
- semiconductor region
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000003860 storage Methods 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56073546A JPS57188866A (en) | 1981-05-18 | 1981-05-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56073546A JPS57188866A (en) | 1981-05-18 | 1981-05-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57188866A JPS57188866A (en) | 1982-11-19 |
| JPH0328071B2 true JPH0328071B2 (ko) | 1991-04-17 |
Family
ID=13521334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56073546A Granted JPS57188866A (en) | 1981-05-18 | 1981-05-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57188866A (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6022361A (ja) * | 1983-07-19 | 1985-02-04 | Nec Corp | Ｍｉｓ型半導体記憶装置の製造方法 |
| US4570331A (en) * | 1984-01-26 | 1986-02-18 | Inmos Corporation | Thick oxide field-shield CMOS process |
| JPH06105774B2 (ja) * | 1987-11-17 | 1994-12-21 | 富士通株式会社 | 半導体記憶装置及びその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5333053A (en) * | 1976-09-09 | 1978-03-28 | Toshiba Corp | Production of semiconductor device |
| JPS55141750A (en) * | 1979-04-23 | 1980-11-05 | Nec Corp | Insulated gate type semiconductor device |
-
1981
- 1981-05-18 JP JP56073546A patent/JPS57188866A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5333053A (en) * | 1976-09-09 | 1978-03-28 | Toshiba Corp | Production of semiconductor device |
| JPS55141750A (en) * | 1979-04-23 | 1980-11-05 | Nec Corp | Insulated gate type semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57188866A (en) | 1982-11-19 |
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