JPH0324055B2 - - Google Patents

Info

Publication number
JPH0324055B2
JPH0324055B2 JP62267582A JP26758287A JPH0324055B2 JP H0324055 B2 JPH0324055 B2 JP H0324055B2 JP 62267582 A JP62267582 A JP 62267582A JP 26758287 A JP26758287 A JP 26758287A JP H0324055 B2 JPH0324055 B2 JP H0324055B2
Authority
JP
Japan
Prior art keywords
boron
disk
wafer
reaction chamber
boron disk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62267582A
Other languages
English (en)
Japanese (ja)
Other versions
JPH01169924A (ja
Inventor
Puranto Manon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Semiconductor ULC
Original Assignee
Mitel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Corp filed Critical Mitel Corp
Publication of JPH01169924A publication Critical patent/JPH01169924A/ja
Publication of JPH0324055B2 publication Critical patent/JPH0324055B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP62267582A 1986-10-29 1987-10-21 不純物拡散方法 Granted JPH01169924A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CA521720 1986-10-29
CA000521720A CA1244969A (en) 1986-10-29 1986-10-29 Method for diffusing p-type material using boron disks

Publications (2)

Publication Number Publication Date
JPH01169924A JPH01169924A (ja) 1989-07-05
JPH0324055B2 true JPH0324055B2 (en, 2012) 1991-04-02

Family

ID=4134242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62267582A Granted JPH01169924A (ja) 1986-10-29 1987-10-21 不純物拡散方法

Country Status (4)

Country Link
US (1) US4857480A (en, 2012)
JP (1) JPH01169924A (en, 2012)
CA (1) CA1244969A (en, 2012)
GB (1) GB2197125B (en, 2012)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270224A (en) * 1988-03-11 1993-12-14 Fujitsu Limited Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit
EP0332101B1 (en) * 1988-03-11 1997-06-04 Fujitsu Limited Semiconductor device having a region doped to a level exceeding the solubility limit
US5518937A (en) * 1988-03-11 1996-05-21 Fujitsu Limited Semiconductor device having a region doped to a level exceeding the solubility limit
JP2583681B2 (ja) * 1991-03-20 1997-02-19 信越半導体株式会社 半導体ウェーハへの硼素拡散方法
US6022258A (en) * 1996-03-27 2000-02-08 Thermoceramix, Llc ARC chamber for an ion implantation system
US6239440B1 (en) 1996-03-27 2001-05-29 Thermoceramix, L.L.C. Arc chamber for an ion implantation system
US5914494A (en) * 1996-03-27 1999-06-22 Thermoceramix, Llc Arc chamber for an ion implantation system
US5857889A (en) * 1996-03-27 1999-01-12 Thermoceramix, Llc Arc Chamber for an ion implantation system
US5972784A (en) * 1997-04-24 1999-10-26 Georgia Tech Research Corporation Arrangement, dopant source, and method for making solar cells
US6555407B1 (en) 1999-10-26 2003-04-29 Zarlink Semiconductor Ab Method for the controlled oxidiation of materials
GB2355850A (en) * 1999-10-26 2001-05-02 Mitel Semiconductor Ab Forming oxide layers in semiconductor layers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA721882A (en) * 1965-11-16 Motorola Semiconductor diffusion method
US3374125A (en) * 1965-05-10 1968-03-19 Rca Corp Method of forming a pn junction by vaporization
GB1143907A (en) * 1967-07-10 1969-02-26 Marconi Co Ltd Improvements in or relating to methods of manufacturing semiconductor devices
US3644154A (en) * 1969-06-09 1972-02-22 Ibm Method of fabricating semiconductor structures with reduced crystallographic defects
GB1332994A (en) * 1971-01-11 1973-10-10 Mullard Ltd Method of diffusing an impurity into a semiconductor body
US3849344A (en) * 1972-03-31 1974-11-19 Carborundum Co Solid diffusion sources containing phosphorus and silicon
JPS5525486B2 (en, 2012) * 1972-07-07 1980-07-07
JPS49108969A (en, 2012) * 1973-02-07 1974-10-16
JPS49114355A (en, 2012) * 1973-02-28 1974-10-31
JPS6011457B2 (ja) * 1973-04-02 1985-03-26 株式会社日立製作所 デイポジシヨン法
US3997351A (en) * 1974-01-07 1976-12-14 Owens-Illinois, Inc. Glass-ceramic dopant host for vapor phase transport of B2 O3
JPS59177923A (ja) * 1983-03-28 1984-10-08 Matsushita Electronics Corp 半導体への硼素拡散方法
JPS62101026A (ja) * 1985-10-26 1987-05-11 Shin Etsu Chem Co Ltd 不純物拡散源
JPS62198119A (ja) * 1986-02-25 1987-09-01 Morita Mfg Co Ltd 硼素拡散方法並びにその装置

Also Published As

Publication number Publication date
JPH01169924A (ja) 1989-07-05
US4857480A (en) 1989-08-15
GB2197125B (en) 1990-01-10
CA1244969A (en) 1988-11-15
GB2197125A (en) 1988-05-11
GB8723730D0 (en) 1987-11-11

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