JPH0323996B2 - - Google Patents

Info

Publication number
JPH0323996B2
JPH0323996B2 JP63132726A JP13272688A JPH0323996B2 JP H0323996 B2 JPH0323996 B2 JP H0323996B2 JP 63132726 A JP63132726 A JP 63132726A JP 13272688 A JP13272688 A JP 13272688A JP H0323996 B2 JPH0323996 B2 JP H0323996B2
Authority
JP
Japan
Prior art keywords
differential
differential amplifier
output
amplifier circuit
output signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63132726A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6452287A (en
Inventor
Noburo Tanimura
Akira Yamamoto
Kazuo Yoshizaki
Isao Akima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Microcomputer System Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Microcomputer System Ltd, Hitachi Ltd filed Critical Hitachi Microcomputer System Ltd
Priority to JP63132726A priority Critical patent/JPS6452287A/ja
Publication of JPS6452287A publication Critical patent/JPS6452287A/ja
Publication of JPH0323996B2 publication Critical patent/JPH0323996B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
JP63132726A 1988-06-01 1988-06-01 Semiconductor memory device Granted JPS6452287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63132726A JPS6452287A (en) 1988-06-01 1988-06-01 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63132726A JPS6452287A (en) 1988-06-01 1988-06-01 Semiconductor memory device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2214428A Division JPH03205695A (ja) 1990-08-15 1990-08-15 半導体記憶装置
JP2214427A Division JPH0719474B2 (ja) 1990-08-15 1990-08-15 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6452287A JPS6452287A (en) 1989-02-28
JPH0323996B2 true JPH0323996B2 (enrdf_load_stackoverflow) 1991-04-02

Family

ID=15088152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63132726A Granted JPS6452287A (en) 1988-06-01 1988-06-01 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS6452287A (enrdf_load_stackoverflow)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE=1981US *

Also Published As

Publication number Publication date
JPS6452287A (en) 1989-02-28

Similar Documents

Publication Publication Date Title
JPH0479080B2 (enrdf_load_stackoverflow)
KR970011133B1 (ko) 반도체 메모리
CN107093445B (zh) 半导体器件
US4951259A (en) Semiconductor memory device with first and second word line drivers
JPH0795395B2 (ja) 半導体集積回路
JP2000187985A (ja) 半導体記憶装置
US4987560A (en) Semiconductor memory device
JP2865078B2 (ja) 半導体記憶装置
KR960011201B1 (ko) 다이내믹 ram
JP2001101893A (ja) スタティック型半導体記憶装置
JP2002352581A (ja) 半導体集積回路
US5023842A (en) Semiconductor memory having improved sense amplifiers
JPH0263277B2 (enrdf_load_stackoverflow)
JP3064561B2 (ja) 半導体記憶装置
JP2631925B2 (ja) Mos型ram
JPH0323996B2 (enrdf_load_stackoverflow)
JPH0480480B2 (enrdf_load_stackoverflow)
USRE34060E (en) High speed semiconductor memory device having a high gain sense amplifier
JP2986939B2 (ja) ダイナミックram
JP2792256B2 (ja) 半導体メモリ
JPH0719474B2 (ja) 半導体記憶装置
JP2003242780A (ja) 半導体記憶装置
JP2871962B2 (ja) 半導体記憶回路装置
JP2605867B2 (ja) 半導体メモリ回路
JP2000195273A (ja) 半導体記憶装置