JPH0322445A - 混成集積回路 - Google Patents
混成集積回路Info
- Publication number
- JPH0322445A JPH0322445A JP1157637A JP15763789A JPH0322445A JP H0322445 A JPH0322445 A JP H0322445A JP 1157637 A JP1157637 A JP 1157637A JP 15763789 A JP15763789 A JP 15763789A JP H0322445 A JPH0322445 A JP H0322445A
- Authority
- JP
- Japan
- Prior art keywords
- pads
- semiconductor chip
- wiring board
- pad
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000011810 insulating material Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 24
- 239000010931 gold Substances 0.000 abstract description 11
- 229910052737 gold Inorganic materials 0.000 abstract description 11
- 239000000919 ceramic Substances 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000003467 diminishing effect Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は混成集積回路に関する。
第3図は従来の混或集積回路の一例の断面図である。
プリント板.厚膜印刷基板,薄膜多層基板等の配線板1
上に半導体チップ2を搭載し、金線3により半導体チッ
プ2の電極と配線板1のボンディングパッドとを接続し
、しかる後に半導体チップ搭載部をシリコーン樹脂,エ
ボキシ樹脂,フェノール樹脂等の樹脂4で被覆する。
上に半導体チップ2を搭載し、金線3により半導体チッ
プ2の電極と配線板1のボンディングパッドとを接続し
、しかる後に半導体チップ搭載部をシリコーン樹脂,エ
ボキシ樹脂,フェノール樹脂等の樹脂4で被覆する。
しかしながら、集積度が大きくなると、ボンディングパ
ッドや電極を一列に配置することが難しくなってくる。
ッドや電極を一列に配置することが難しくなってくる。
そこで、二列配置が行われるようになった。
第4図(a),(b)は従来の混戒集積回路の他の例の
部分平面図及び側面図である。
部分平面図及び側面図である。
半導体チップ2のボンディング用パッド21a,2lb
及び配線板1のホンディング用パッド11a,llbを
それぞれ二列に配置し、金線3a,3bでそれぞれ接続
する。このとき、金線3aと3bとは側面から見たとき
に上下関係にあるようにボンディングするのが普通であ
る。
及び配線板1のホンディング用パッド11a,llbを
それぞれ二列に配置し、金線3a,3bでそれぞれ接続
する。このとき、金線3aと3bとは側面から見たとき
に上下関係にあるようにボンディングするのが普通であ
る。
上述のように、集積数が大きくなり、配線板1上のパッ
ドlla,llbの配置密度が高くなると、金線3aと
3bとが上下あるいは左右に蛇行して両金線が電気的に
接触するという不良を生じたり、あるいはパッドの微細
配置ができなくなるという欠点が出てくる。
ドlla,llbの配置密度が高くなると、金線3aと
3bとが上下あるいは左右に蛇行して両金線が電気的に
接触するという不良を生じたり、あるいはパッドの微細
配置ができなくなるという欠点が出てくる。
本発明は、半導体チップ搭載部と該半導体チップ搭載部
の周囲に該半導体チップ搭載部に近い方のボンディング
用第1パッドと遠い方のボンディング用第2パッドとが
交互に配置され前記パッドの各々に配線が接続している
配線板と、前記半導体チップ搭載部に固着され、前記二
種のパッドに対応してボンディング用パッドが形成され
ている半導体チップとを有する混成集積回路において、
前記第1パッドと第2パッドとの間を通って前記半導体
チップを囲むように絶縁物製の枠を設け、前記枠の表面
でかつ前記第2パッドに対応する位置に金属層を設け、
前記第2パッドと金属層との間及び前記半導体チップの
パッドと金属層との間をそれぞれ金属線で接続したこと
を特徴とする。
の周囲に該半導体チップ搭載部に近い方のボンディング
用第1パッドと遠い方のボンディング用第2パッドとが
交互に配置され前記パッドの各々に配線が接続している
配線板と、前記半導体チップ搭載部に固着され、前記二
種のパッドに対応してボンディング用パッドが形成され
ている半導体チップとを有する混成集積回路において、
前記第1パッドと第2パッドとの間を通って前記半導体
チップを囲むように絶縁物製の枠を設け、前記枠の表面
でかつ前記第2パッドに対応する位置に金属層を設け、
前記第2パッドと金属層との間及び前記半導体チップの
パッドと金属層との間をそれぞれ金属線で接続したこと
を特徴とする。
次に、本発明の実施例について図面を参照して説明する
。
。
第1図は本発明の一実施例の平面図、第2図(a),(
b)は第1図に示す実施例の部分拡大平面図及び側面図
である。
b)は第1図に示す実施例の部分拡大平面図及び側面図
である。
この実施例においては、配線板のパッドllaとllb
との間を通るセラミック枠、5を配線7の上から配線板
1に固着する。セラミック枠5は、例えば高さを0.3
mm、幅1mmの寸法にする。セラミック枠5の表面で
パッドllbに対応した位置に金属層6を設ける。そし
て、金線3bで半導体チップ2のパッド2lbと金属層
6との間を接続し、金線3cで配線板1のパッド11b
と金属層6との間を接続する。これ以外は従来例と同じ
である。
との間を通るセラミック枠、5を配線7の上から配線板
1に固着する。セラミック枠5は、例えば高さを0.3
mm、幅1mmの寸法にする。セラミック枠5の表面で
パッドllbに対応した位置に金属層6を設ける。そし
て、金線3bで半導体チップ2のパッド2lbと金属層
6との間を接続し、金線3cで配線板1のパッド11b
と金属層6との間を接続する。これ以外は従来例と同じ
である。
このように、パッド2lbとパッド1lbとの間のよう
に金線が長くなる所では、途中に中継点をおいてやると
、金線3bの長さを短くでき、金線の上下または左右蛇
行を少なくでき、電気的に接触するという不良を低減す
ることができる。
に金線が長くなる所では、途中に中継点をおいてやると
、金線3bの長さを短くでき、金線の上下または左右蛇
行を少なくでき、電気的に接触するという不良を低減す
ることができる。
上記実施例では、セラミック枠を矩形としたが、矩形に
限定されず、環状としても良い。また、セラミックの代
りにプラスチックあるいはガラス等の絶縁物を用いても
良い。
限定されず、環状としても良い。また、セラミックの代
りにプラスチックあるいはガラス等の絶縁物を用いても
良い。
以上説明したように、本発明は、半導体チップを囲む形
状に絶縁物の枠を配置し、その枠の内側と外側とに配線
板のボンディング用パッドを配置して半導体チップのパ
ッドと配線板上のパッドとを接続する短かい金線と長い
金線との高度差を十分にとることができ、また長い金線
を二つに分けて各々が短くなるようにしたので、金線の
上下左右に蛇行するのを低減し、両金線が電気的に接触
する確率は小さくし、混戒集積回路の製造歩留りや信頼
度は向上するという効果がある。
状に絶縁物の枠を配置し、その枠の内側と外側とに配線
板のボンディング用パッドを配置して半導体チップのパ
ッドと配線板上のパッドとを接続する短かい金線と長い
金線との高度差を十分にとることができ、また長い金線
を二つに分けて各々が短くなるようにしたので、金線の
上下左右に蛇行するのを低減し、両金線が電気的に接触
する確率は小さくし、混戒集積回路の製造歩留りや信頼
度は向上するという効果がある。
第1図は本発明の一実施例の平面図、第2図(a).(
b)は第1図に示す実施例の部分拡大平面図、第3図は
従来の混或集積回路の一例の断面図、第4図(a),(
b)は従来の混戒集積回路の他の例の平面図及び側面図
である。 1・・・配線板、2・・・半導体チップ、3.3a,3
b,3c・・・金線、4・・・樹脂、5・・・セラミッ
ク枠、6・・・金属層、7・・・配線、lla,llb
・・・パッド、21a,21b・・・パッド。
b)は第1図に示す実施例の部分拡大平面図、第3図は
従来の混或集積回路の一例の断面図、第4図(a),(
b)は従来の混戒集積回路の他の例の平面図及び側面図
である。 1・・・配線板、2・・・半導体チップ、3.3a,3
b,3c・・・金線、4・・・樹脂、5・・・セラミッ
ク枠、6・・・金属層、7・・・配線、lla,llb
・・・パッド、21a,21b・・・パッド。
Claims (1)
- 半導体チップ搭載部と該半導体チップ搭載部の周囲に該
半導体チップ搭載部に近い方のボンディング用第1パッ
ドと遠い方のボンディング用第2パッドとが交互に配置
され前記パッドの各々に配線が接続している配線板と、
前記半導体チップ搭載部に固着され、前記二種のパッド
に対応してボンディング用パッドが形成されている半導
体チップとを有する混成集積回路において、前記第1パ
ッドと第2パッドとの間を通って前記半導体チップを囲
むように絶縁物製の枠を設け、前記枠の表面でかつ前記
第2パッドに対応する位置に金属層を設け、前記第2パ
ッドと金属層との間及び前記半導体チップのパッドと金
属層との間をそれぞれ金属線で接続したことを特徴とす
る混成集積回路。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1157637A JPH0322445A (ja) | 1989-06-19 | 1989-06-19 | 混成集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1157637A JPH0322445A (ja) | 1989-06-19 | 1989-06-19 | 混成集積回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0322445A true JPH0322445A (ja) | 1991-01-30 |
Family
ID=15654077
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1157637A Pending JPH0322445A (ja) | 1989-06-19 | 1989-06-19 | 混成集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0322445A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0513591A2 (en) * | 1991-05-09 | 1992-11-19 | International Business Machines Corporation | Lead Frame-chip package |
-
1989
- 1989-06-19 JP JP1157637A patent/JPH0322445A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0513591A2 (en) * | 1991-05-09 | 1992-11-19 | International Business Machines Corporation | Lead Frame-chip package |
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