JPH02281647A - 集積回路 - Google Patents
集積回路Info
- Publication number
- JPH02281647A JPH02281647A JP1102410A JP10241089A JPH02281647A JP H02281647 A JPH02281647 A JP H02281647A JP 1102410 A JP1102410 A JP 1102410A JP 10241089 A JP10241089 A JP 10241089A JP H02281647 A JPH02281647 A JP H02281647A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- island
- pads
- leads
- bonding pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 21
- 239000010931 gold Substances 0.000 abstract description 13
- 229910052737 gold Inorganic materials 0.000 abstract description 13
- 239000000919 ceramic Substances 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
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- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L2224/0554—External layer
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- H01L2224/05552—Shape in top view
- H01L2224/05553—Shape in top view being rectangular
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- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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Landscapes
- Engineering & Computer Science (AREA)
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は集積回路に関する。
第3図(a)、(b)の従来の集積回路の一例の平面図
及びA−A’線断面図である。
及びA−A’線断面図である。
リードフレームのアイランド3に半導体チップ7を固着
し、リードフレームのり−ド1と半導体チップ7のパッ
ドとを金線9で接続し、樹脂1゜で接続する。
し、リードフレームのり−ド1と半導体チップ7のパッ
ドとを金線9で接続し、樹脂1゜で接続する。
第4図(a)、(b)は第3図(a)、(b)に示す集
積回路の内部の部分平面図及び側面図である。
積回路の内部の部分平面図及び側面図である。
リードフレームのり−ド1の先端のパッド2a2bは1
列に配置され、半導体チップ7のパッド8a、8bもこ
れに対して1列に配置され、金線9a、9bでそれぞれ
接続される。
列に配置され、半導体チップ7のパッド8a、8bもこ
れに対して1列に配置され、金線9a、9bでそれぞれ
接続される。
上述した従来の半導体集積回路は、半導体集積回路が大
規模になって半導体チップ上の電極数が例えば100〜
250本程度に多くなった場合には、その製造の歩留り
や製品の信頼度が低下するという欠点があり、またリー
ドフレームを微細に加工することができなくなるために
、半導体集積回路自体の製造ができなくなるという欠点
がある。即ち、第4図(a)、(b)に示したように、
リード1の先端のパッド2の配置密度が高くなると、金
線9a、9bが上下または左右に蛇行して両者の線が接
触して短絡するという不良を生じる。またリードフレー
ムの製造も難しくなるという欠点がる。
規模になって半導体チップ上の電極数が例えば100〜
250本程度に多くなった場合には、その製造の歩留り
や製品の信頼度が低下するという欠点があり、またリー
ドフレームを微細に加工することができなくなるために
、半導体集積回路自体の製造ができなくなるという欠点
がある。即ち、第4図(a)、(b)に示したように、
リード1の先端のパッド2の配置密度が高くなると、金
線9a、9bが上下または左右に蛇行して両者の線が接
触して短絡するという不良を生じる。またリードフレー
ムの製造も難しくなるという欠点がる。
本発明の集積回路は、アイランドに半導体チップが固着
され、前記アイランドの周囲に間隔をおいてリードが配
置され、前記リードの先端のボンディング用バッドが一
つおきに前記アイランドに対して遠近となるように配置
され、前記半導体チップのボンディング用パッドと前記
リードのボンディング用パッドとが金属線で接続され、
封止されて成る集積回路において、前記アイランドに近
いボンディング用パッドと遠いボンディングパッドとの
間を通って前記アイランドの周囲を囲む絶縁体の枠を前
記リード上に固着し、前記枠の表面に前記アイランドか
ら遠いボンディング用パッドに対応してボンディング用
金属層を設け、前記アイランドから遠いボンディング用
パッドと前記金属層と前記半導体チップのボンディング
用パッドとを金属線で接続し前記アイランドに近いボン
ディング用パッドと前記半導体チップのボンディングパ
ッドとを直接に接続したことを特徴とする。
され、前記アイランドの周囲に間隔をおいてリードが配
置され、前記リードの先端のボンディング用バッドが一
つおきに前記アイランドに対して遠近となるように配置
され、前記半導体チップのボンディング用パッドと前記
リードのボンディング用パッドとが金属線で接続され、
封止されて成る集積回路において、前記アイランドに近
いボンディング用パッドと遠いボンディングパッドとの
間を通って前記アイランドの周囲を囲む絶縁体の枠を前
記リード上に固着し、前記枠の表面に前記アイランドか
ら遠いボンディング用パッドに対応してボンディング用
金属層を設け、前記アイランドから遠いボンディング用
パッドと前記金属層と前記半導体チップのボンディング
用パッドとを金属線で接続し前記アイランドに近いボン
ディング用パッドと前記半導体チップのボンディングパ
ッドとを直接に接続したことを特徴とする。
第1図は本発明の一実施例の部分平面図、第2図(a)
、(b)は第1図に示す実施例の部分拡大図及び側面図
である。
、(b)は第1図に示す実施例の部分拡大図及び側面図
である。
半導体チップ7を載置するアイランド3の四辺にリード
1を配置するが、その時リードの先端のパッ、ド2a、
2bは互いに千鳥足状に配置し、しかもパッド2aと2
bの間隔を少し広くする。そして、パッド2aと2bと
の間の通ってアイランド3を囲むようにセラミック枠5
をリード1の上に固着する。セラミック枠5の表面には
金線9a、9b、9cがボンディング出来るように金属
層6を形成しておく、金属層6の相貫としては金が適当
である。
1を配置するが、その時リードの先端のパッ、ド2a、
2bは互いに千鳥足状に配置し、しかもパッド2aと2
bの間隔を少し広くする。そして、パッド2aと2bと
の間の通ってアイランド3を囲むようにセラミック枠5
をリード1の上に固着する。セラミック枠5の表面には
金線9a、9b、9cがボンディング出来るように金属
層6を形成しておく、金属層6の相貫としては金が適当
である。
アイランド6に半導体チップ7を固着し、半導体チップ
7のパッド8aとリード1のパッド2aとの間の距離は
短いので直接に金線9aで接続する。半導体チップ8b
にボンディングした金線9bはセラミック枠5の金属層
6にボンディング接続する。金属層6とリード1のパッ
ド2bとは金線9cで接続する。
7のパッド8aとリード1のパッド2aとの間の距離は
短いので直接に金線9aで接続する。半導体チップ8b
にボンディングした金線9bはセラミック枠5の金属層
6にボンディング接続する。金属層6とリード1のパッ
ド2bとは金線9cで接続する。
このように、セラミック枠5を設け、高度差を設けるこ
とによって金線9aと9bとの上下方向の間隔を広くす
ることができるので、短絡を防ぐことができる。
とによって金線9aと9bとの上下方向の間隔を広くす
ることができるので、短絡を防ぐことができる。
上記実施例では、セラミック枠を用いたが、ガラスまた
はプラスチック等の絶縁体で表面にボンディング用の金
属層を形成できるものであれば、どれを用いても良いこ
とは明らかである。
はプラスチック等の絶縁体で表面にボンディング用の金
属層を形成できるものであれば、どれを用いても良いこ
とは明らかである。
以上説明したように本発明は、半導体チップを囲む形状
に絶縁物の枠を配置し、その枠の内側と外側とにリード
先端のパッドとをを配置し、半導体チップのパッドとリ
ードとを接続する短かい金線と長い金線との高度差を充
分にとることができるようにしたので、両金線が電気的
に接触する確率が小さくなり、製造される半導体集積回
路の製造歩留や信頼度を向上させることができるという
効果を有する。
に絶縁物の枠を配置し、その枠の内側と外側とにリード
先端のパッドとをを配置し、半導体チップのパッドとリ
ードとを接続する短かい金線と長い金線との高度差を充
分にとることができるようにしたので、両金線が電気的
に接触する確率が小さくなり、製造される半導体集積回
路の製造歩留や信頼度を向上させることができるという
効果を有する。
第1図は本発明の一実施例の平面図、第2図(a)、(
b)は第1図に示す実施例の部分拡大図及び側面図、第
3図(a>、(b)は従来の半導体集積回路の平面図及
びA−A’断面図、第4図(a)、(b)は第3図(a
)に示す半導体集積回路の内部の部分平面図及び側面図
である。 1・・・リード、2a、2b・・・パッド、3・・・ア
イランド、4・・・金めつき層、5・・・セラミック枠
、6・・・金属層、7・・・半導体チップ、8a、8b
・・・パッド、9a、9b、9c・・・金線、10・・
・樹脂。
b)は第1図に示す実施例の部分拡大図及び側面図、第
3図(a>、(b)は従来の半導体集積回路の平面図及
びA−A’断面図、第4図(a)、(b)は第3図(a
)に示す半導体集積回路の内部の部分平面図及び側面図
である。 1・・・リード、2a、2b・・・パッド、3・・・ア
イランド、4・・・金めつき層、5・・・セラミック枠
、6・・・金属層、7・・・半導体チップ、8a、8b
・・・パッド、9a、9b、9c・・・金線、10・・
・樹脂。
Claims (1)
- アイランドに半導体チップが固着され、前記アイランド
の周囲に間隔をおいてリードが配置され、前記リードの
先端のボンディング用パッドが一つおきに前記アイラン
ドに対して遠近となるように配置され、前記半導体チッ
プのボンディング用パッドと前記リードのボンディング
用パッドとが金属線で接続され、封止されて成る集積回
路において、前記アイランドに近いボンディング用パッ
ドと遠いボンディングパッドとの間を通って前記アイラ
ンドの周囲を囲む絶縁体の枠を前記リード上に固着し、
前記枠の表面に前記アイランドから遠いボンディング用
パッドに対応してボンディング用金属層を設け、前記ア
イランドから遠いボンディング用パッドと前記金属層と
前記半導体チップのボンディング用パッドとを金属線で
接続し前記アイランドに近いボンディング用パッドと前
記半導体チップのボンディングパッドとを直接に接続し
たことを特徴とする集積回路。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1102410A JPH02281647A (ja) | 1989-04-21 | 1989-04-21 | 集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1102410A JPH02281647A (ja) | 1989-04-21 | 1989-04-21 | 集積回路 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02281647A true JPH02281647A (ja) | 1990-11-19 |
Family
ID=14326672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1102410A Pending JPH02281647A (ja) | 1989-04-21 | 1989-04-21 | 集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02281647A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0513591A2 (en) * | 1991-05-09 | 1992-11-19 | International Business Machines Corporation | Lead Frame-chip package |
-
1989
- 1989-04-21 JP JP1102410A patent/JPH02281647A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0513591A2 (en) * | 1991-05-09 | 1992-11-19 | International Business Machines Corporation | Lead Frame-chip package |
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