JPH0321511B2 - - Google Patents
Info
- Publication number
- JPH0321511B2 JPH0321511B2 JP60121560A JP12156085A JPH0321511B2 JP H0321511 B2 JPH0321511 B2 JP H0321511B2 JP 60121560 A JP60121560 A JP 60121560A JP 12156085 A JP12156085 A JP 12156085A JP H0321511 B2 JPH0321511 B2 JP H0321511B2
- Authority
- JP
- Japan
- Prior art keywords
- ampoule
- crystal
- outer tube
- tube
- crystal growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP12156085A JPS61281095A (ja) | 1985-06-06 | 1985-06-06 | 結晶成長用アンプル | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP12156085A JPS61281095A (ja) | 1985-06-06 | 1985-06-06 | 結晶成長用アンプル | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS61281095A JPS61281095A (ja) | 1986-12-11 | 
| JPH0321511B2 true JPH0321511B2 (OSRAM) | 1991-03-22 | 
Family
ID=14814258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP12156085A Granted JPS61281095A (ja) | 1985-06-06 | 1985-06-06 | 結晶成長用アンプル | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS61281095A (OSRAM) | 
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS6321278A (ja) * | 1986-07-11 | 1988-01-28 | Nippon Mining Co Ltd | 単結晶成長用アンプル | 
| US5312506A (en) * | 1987-06-15 | 1994-05-17 | Mitsui Mining Company, Limited | Method for growing single crystals from melt | 
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| JPS49119445U (OSRAM) * | 1973-02-13 | 1974-10-12 | ||
| JPS58135195A (ja) * | 1982-02-04 | 1983-08-11 | Fujitsu Ltd | 半導体結晶成長用アンプル | 
| JPS607596U (ja) * | 1983-06-24 | 1985-01-19 | ミツミ電機株式会社 | 単結晶育成用ルツボ | 
- 
        1985
        - 1985-06-06 JP JP12156085A patent/JPS61281095A/ja active Granted
 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPS61281095A (ja) | 1986-12-11 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| CN104047047B (zh) | 一种磷硅镉单晶的水平生长装置及生长方法 | |
| JPS63315589A (ja) | 単結晶製造装置 | |
| JPS60251191A (ja) | 高解離圧化合物単結晶成長方法 | |
| JPH0321511B2 (OSRAM) | ||
| JPS6041036B2 (ja) | GaAs浮遊帯融解草結晶製造装置 | |
| JP2015231921A (ja) | 結晶成長用坩堝 | |
| JP2018177552A (ja) | 単結晶育成用坩堝 | |
| JPS6321278A (ja) | 単結晶成長用アンプル | |
| JP4117813B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPS6021900A (ja) | 化合物半導体単結晶製造装置 | |
| JPS6077195A (ja) | 3―5族化合物半導体単結晶の製造装置 | |
| CN116163021A (zh) | 一种碲锌镉晶体的生长装置及生长方法 | |
| JPS63310789A (ja) | 単結晶の製造方法及び製造装置 | |
| JPH01122995A (ja) | 化合物半導体単結晶の成長方法 | |
| JPH08290991A (ja) | 化合物半導体単結晶の成長方法 | |
| JP3200204B2 (ja) | Iii−v族単結晶の製造方法 | |
| De Sandro et al. | Novel design of graphite crucible for AgGaSe2 single-crystal growth | |
| JPS60255689A (ja) | 半導体結晶の製造方法 | |
| JPS5957992A (ja) | 化合物半導体単結晶の製造方法 | |
| CN110512273A (zh) | 一种提高单晶结晶质量的方法 | |
| JPS6027695A (ja) | 化合物半導体単結晶製造装置 | |
| JPS6138160B2 (OSRAM) | ||
| JPH0383888A (ja) | 単結晶引き上げ装置 | |
| JPH03153594A (ja) | 半導体単結晶製造装置 | |
| JPS5869800A (ja) | 3−5族化合物半導体の結晶成長方法 |