JPH0320905B2 - - Google Patents

Info

Publication number
JPH0320905B2
JPH0320905B2 JP55187295A JP18729580A JPH0320905B2 JP H0320905 B2 JPH0320905 B2 JP H0320905B2 JP 55187295 A JP55187295 A JP 55187295A JP 18729580 A JP18729580 A JP 18729580A JP H0320905 B2 JPH0320905 B2 JP H0320905B2
Authority
JP
Japan
Prior art keywords
charge storage
electrode
capacitive element
transistor
storage electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55187295A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57112066A (en
Inventor
Yoshimi Shiotani
Michio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55187295A priority Critical patent/JPS57112066A/ja
Publication of JPS57112066A publication Critical patent/JPS57112066A/ja
Publication of JPH0320905B2 publication Critical patent/JPH0320905B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP55187295A 1980-12-29 1980-12-29 Laminated capacitive element Granted JPS57112066A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55187295A JPS57112066A (en) 1980-12-29 1980-12-29 Laminated capacitive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55187295A JPS57112066A (en) 1980-12-29 1980-12-29 Laminated capacitive element

Publications (2)

Publication Number Publication Date
JPS57112066A JPS57112066A (en) 1982-07-12
JPH0320905B2 true JPH0320905B2 (zh) 1991-03-20

Family

ID=16203491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55187295A Granted JPS57112066A (en) 1980-12-29 1980-12-29 Laminated capacitive element

Country Status (1)

Country Link
JP (1) JPS57112066A (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956754A (ja) * 1982-09-24 1984-04-02 Fujitsu Ltd 半導体装置の製造方法
JPS5961956A (ja) * 1982-09-30 1984-04-09 Fujitsu Ltd ダイナミツク・メモリ
JPS59188963A (ja) * 1983-04-12 1984-10-26 Nec Corp 半導体装置
JPS59231851A (ja) * 1983-06-14 1984-12-26 Nippon Telegr & Teleph Corp <Ntt> 半導体メモリセル
JPS6014462A (ja) * 1983-07-05 1985-01-25 Oki Electric Ind Co Ltd 半導体メモリ素子
JPH0682681B2 (ja) * 1984-11-28 1994-10-19 株式会社日立製作所 半導体装置およびその製造方法
JPH0682783B2 (ja) * 1985-03-29 1994-10-19 三菱電機株式会社 容量およびその製造方法
US4685197A (en) * 1986-01-07 1987-08-11 Texas Instruments Incorporated Fabricating a stacked capacitor
JPS63133565A (ja) * 1986-11-25 1988-06-06 Matsushita Electronics Corp 半導体記憶装置
JP2685833B2 (ja) * 1988-09-30 1997-12-03 株式会社東芝 半導体記憶装置およびその製造方法
JPH0810750B2 (ja) * 1988-11-16 1996-01-31 三菱電機株式会社 半導体装置
US5057446A (en) * 1990-08-06 1991-10-15 Texas Instruments Incorporated Method of making an EEPROM with improved capacitive coupling between control gate and floating gate
JP2797746B2 (ja) * 1991-04-05 1998-09-17 日本電気株式会社 集積回路用容量素子の製作方法
US6617205B1 (en) 1995-11-20 2003-09-09 Hitachi, Ltd. Semiconductor storage device and process for manufacturing the same
US6689668B1 (en) 2000-08-31 2004-02-10 Samsung Austin Semiconductor, L.P. Methods to improve density and uniformity of hemispherical grain silicon layers
US6403455B1 (en) 2000-08-31 2002-06-11 Samsung Austin Semiconductor, L.P. Methods of fabricating a memory device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123687A (en) * 1977-04-04 1978-10-28 Nec Corp Binary memory element
JPS55154762A (en) * 1979-05-22 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53123687A (en) * 1977-04-04 1978-10-28 Nec Corp Binary memory element
JPS55154762A (en) * 1979-05-22 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor memory

Also Published As

Publication number Publication date
JPS57112066A (en) 1982-07-12

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