JPH0318336B2 - - Google Patents

Info

Publication number
JPH0318336B2
JPH0318336B2 JP55117527A JP11752780A JPH0318336B2 JP H0318336 B2 JPH0318336 B2 JP H0318336B2 JP 55117527 A JP55117527 A JP 55117527A JP 11752780 A JP11752780 A JP 11752780A JP H0318336 B2 JPH0318336 B2 JP H0318336B2
Authority
JP
Japan
Prior art keywords
transistor
temperature
base
emitter
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55117527A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5740977A (en
Inventor
Kyokazu Inoe
Masaharu Toyoshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP55117527A priority Critical patent/JPS5740977A/ja
Publication of JPS5740977A publication Critical patent/JPS5740977A/ja
Publication of JPH0318336B2 publication Critical patent/JPH0318336B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Bipolar Transistors (AREA)
JP55117527A 1980-08-25 1980-08-25 Semiconductor device Granted JPS5740977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55117527A JPS5740977A (en) 1980-08-25 1980-08-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55117527A JPS5740977A (en) 1980-08-25 1980-08-25 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5740977A JPS5740977A (en) 1982-03-06
JPH0318336B2 true JPH0318336B2 (enrdf_load_stackoverflow) 1991-03-12

Family

ID=14713988

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55117527A Granted JPS5740977A (en) 1980-08-25 1980-08-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5740977A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5997209A (ja) * 1982-11-25 1984-06-05 Mitsubishi Electric Corp 演算増幅用ｉｃ
JPS59208868A (ja) * 1983-05-13 1984-11-27 Hitachi Micro Comput Eng Ltd 半導体集積回路装置
JP3482948B2 (ja) 2000-07-25 2004-01-06 株式会社デンソー 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5138517A (ja) * 1974-09-30 1976-03-31 Teijin Ltd Shijonokyuinhikitorisochi
JPS54157086A (en) * 1978-05-31 1979-12-11 Mitsubishi Electric Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5740977A (en) 1982-03-06

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