JPH03145740A - Semiconductor device - Google Patents

Abstract

PURPOSE:To manufacture a resin-sealed semiconductor device, which is superior in adhesion, hydrolysis resistance and humidity resistance, and to lessen the generation of a void by a method wherein a semiconductor chip is bonded and fixed on a lead frame using a resin composition containing a denatured resin consisting of poly-p-hydroxystyrene and an epoxy resin, a resin having a norbornane ring, a silane coupling agent having an ureide group and conductive powder as its essential components. CONSTITUTION:Other components are added to a denatured resin consisting of poly-p-hydroxystyrene and an epoxy resin, a resin having a norbornene ring, a silane coupling agent having an ureide group and conductive powder and they are sufficiently mixed and thereafter, a kneading treatment is further performed by a three-roll mill, for example, and after that, a vacuum degassing is performed to manufacture a resin composition. The resin composition manufactured in such a way is filled in a syringe, is made to discharge on a lead frame using a dispenser and after a semiconductor chip is bonded on the lead frame at high speed, a wire bonding and a resin sealing are performed to manufacture a resin-sealed semiconductor device.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a semiconductor device that is characterized by a material for die bonding and has excellent adhesiveness, hydrolysis resistance, and moisture resistance.

(Prior art) IC and LS are placed on a predetermined portion of a thin metal plate (lead frame).
The process of connecting semiconductor chips such as I is one of the important processes that affects the long-term reliability of semiconductor devices. Conventionally, this connection method involves heating and pressing the silicon surface of the chip to the gold-plated surface of the lead frame.
-8i eutectic method was the mainstream.

However, with the rise in the price of precious metals, especially gold, in recent years, resin-encapsulated semiconductor devices are rapidly transitioning from the Au-3i eutectic method to methods using solder, conductive paste, etc. be.

(Problem to be solved by the invention) However, although some methods using solder have been put into practical use, it has been pointed out that the solder and solder balls may scatter and adhere to electrodes, etc., causing corrosion and disconnection. has been done. On the other hand, in the method of using conductive paste, epoxy resin mixed with silver powder is usually used, and it has been partially put into practical use for about 10 years, but it is similar to A11-si in terms of reliability. Compared to the eutectic method for producing crystalline alloys, satisfactory results were not obtained. When using conductive paste 1~, it has advantages such as superior heat resistance compared to the soldering method, but
On the other hand, since resins and their curing agents are not made for bonding semiconductor chips, they often accelerate corrosion of aluminum electrodes and cause disconnections, and the reliability of semiconductor devices is lower than that of Au-8i. It was inferior to the crystal method. Furthermore, in recent years, there has been a tendency to cure semiconductor chips such as ICs and LSILEDs at high speeds, causing problems such as the generation of voids and a decrease in adhesive strength.

The present invention has been made in view of the above circumstances, and is capable of curing semiconductor chips and shortening the assembly process, eliminates corrosion and disconnection of wiring, and has excellent adhesion, hydrolysis resistance, and moisture resistance. , it is an attempt to provide a highly reliable semiconductor device without generation of voids.

[Structure of the Invention] (Means for Solving the Problem) As a result of intensive research aimed at achieving the above object, the present inventors have achieved the following by using the resin composition described below.
It was discovered that a highly reliable semiconductor device with excellent adhesion, hydrolysis resistance, and moisture resistance and with few voids can be obtained.
However, the present invention has been completed.

That is, the present invention comprises (A) a modified resin made of polyparahydroxystyrene and an epoxy resin, (B) a resin containing a norbornene ring, (C) a silane coupling agent having a ureido group, and (D) a conductive powder. This is a semiconductor device characterized in that a semiconductor chip and a lead frame are adhesively fixed using a resin composition containing as essential components.

The modified resin (A) consisting of polyparahy-1-roxystyrene and an epoxy resin used in the present invention is obtained by mixing or reacting polyparahydroxystyrene and an epoxy resin. The polyparahydroxystyrene used here is a resin represented by the following formula, for example, Markarin Chikara-M (manufactured by Marukubi Petrochemical Co., Ltd., trade name).
etc. This resin has a molecular weight of 3000-80
00 and a hydroxyl equivalent of approximately 120. Epoxy resins that are industrially produced and can be effectively used in the present invention include, for example, the following dieboxides of bisphenols. Epicote 8
27,828834.1001.1002.10071
009 (manufactured by Shell Chemical Co., Ltd., trade name), DER33033
1,332,334,335°336.337,660
(manufactured by Dow Chemical Company, product name), Araldai 1~GY
250.260280 6071.6084.6097
6099 (manufactured by Ciba Kaigy Co., Ltd., product name), E P
I [Ma L2Z510 5101 (JONE, DABNE
Manufactured by Y company, product name), Epicron 810°1000.10
1.0.3010 (manufactured by Dainippon Ink Chemical Co., Ltd., product name)
, EP series (manufactured by Jiryukasha, product name), etc.

Furthermore, by using, for example, a novolac epoxy resin having an average number of epoxy groups of 3 or more as the epoxy resin, the adhesive strength under heat (350 DEG C.) can be further improved. As these novolak epoxy resins, those having a molecular weight of 500 or more are suitable. Industrially produced novolak epoxy resins include:
For example: Arartite EPN1
1381139 ECN1273. ]280,129
9 (manufactured by Chibakaiki Co., Ltd., product name), DEN431438
(manufactured by Tau Chemical Co., Ltd., trade name), Epicor 1-152.
154 (manufactured by Shell Chemical Co., Ltd., trade name), ERR-0100
There are ERRB-0447, ERLB-0488 (manufactured by Union Carbide Co., trade name), EOCN series (manufactured by Gunpaku Co., Ltd., trade name), etc. These epoxy resins can be used alone or in a mixture of two or more.

The polyparahydroxystyrene and the epoxy resin may be simply melted and mixed together, or may be partially bonded to each other by a heating reaction if necessary.
By dissolving these component resins in a common solvent, the working viscosity can be improved. A curing catalyst may also be used if necessary for the reaction.

Examples of the resin having a norbornene ring (B) used in the present invention include petroleum resins, which are general-purpose resins obtained from 05 to C9 fractions of petroleum. As commercially available,
For example, Shichiloxide 4000 (manufactured by Daicel, trade name), Tatsuki Roll 1000 (manufactured by Sumitomo Chemical, trade name)
, Quinton 1500, 1000, and 1300 (manufactured by Nippon Zeon Co., Ltd., trade name), and these may be used alone or in combination of two or more. The blending ratio of the resin having a norbornene ring is preferably 10 to 30% based on the total resin content. If the blending amount is less than 1% by weight,
It is not effective in improving adhesive strength, and if it exceeds 30% by weight, reactivity tends to be poor, which is not preferable.

When simply dissolving and mixing polyparahydroxystyrene, an epoxy resin, and a resin having a norbornene ring in a solvent, they may be added and dissolved at the same time, but first dissolve the polyparahydroxystyrene in the solvent, and then add the epoxy resin to the solvent. It is preferable to melt and mix the resin and the resin having a norbornene ring. The solvents used here include dioxane, hexane, benzene, toluene, solvent naphtha, industrial gasoline, and cellosolve acetate.

Examples include ethyl cellosolve, butyl cellosolve, butyl cellosolve acetate, butyl carbitol acetate, dimethylpolamide, dimethyl acetamide, N-methylpyrrolidone, etc., and these may be used alone or in combination of two or more.

Examples of the silane coupling agent (C) having a ureido group used in the present invention include γ-claidoethyltrimethoxysilane and γ-ureidopropyltrimethyl-'F disilane, which can be used alone or in combination of two or more. do. The blending ratio of the silane coupling agent having a ureido group is
It is preferable to mix 0.01 to 5 parts by weight with respect to 100 parts by weight of the conductive powder. More preferably 0.05-1
．． Add 0 parts by weight. If the amount is less than 0.01 parts by weight, sufficient high-speed curing properties cannot be obtained, and if it exceeds 5 parts by weight, the resin composition will have many voids, which is not preferable.

Examples of the conductive powder (D) used in the present invention include silver powder and metal powder having a silver layer on the surface.

The resin composition used in the present invention contains a modified resin made of polyparahydroxystyrene and an epoxy resin, a resin having a norbornene ring, a silane coupling agent having a ureido group, and a conductive powder as essential components. Other additives may be added and blended as necessary within a range that does not contradict the purpose. V of this resin composition
The method is to add and thoroughly mix the above-mentioned modified resin, resin having a norbornene ring, silane coupling agent having a ureido group, conductive powder, and other components according to a conventional method, and then further, using a three-roll method, for example. It is manufactured by kneading and then defoaming under reduced pressure.

The resin composition thus produced is filled into a syringe and discharged onto a lead frame using a dispenser to perform high-speed bonding of semiconductor chips, followed by wire bonding.
Resin sealing is performed to manufacture a resin-sealed semiconductor device.

(Examples) Next, the present invention will be explained by examples, but the present invention is not limited by these examples. In the following Examples and Comparative Examples, "parts" means "parts by weight J" unless otherwise specified.

Example 1 Epoxy resin Epicoat 1ooi <manufactured by Shell Chemical Co., Ltd.
(trade name) 37.5 parts, 10 parts of polyparahydroxystyrene Marukalinker M (manufactured by Marukubi Sekiyu Co., Ltd., trade name), and Finton 1300, a resin having a norbornene ring.
(manufactured by Nippon Zeon Co., Ltd., trade name) was subjected to a dissolution reaction in 103 parts of diethylene glycol diethyl ether at 100°C for 1 hour to obtain a viscous resin. This resin 22
A resin composition (I) was prepared by mixing 1.0 part of an amine complex of B F 3 as a catalyst, 0.03 part of γ-crisitoxypropyltrimethoxysilane, and 57 parts of silver powder. did.

Example 2 15.8 parts of epoxy resin Ebicor 1-828 (manufactured by Shell Chemical Co., Ltd., trade name), 10 parts of polyparahuman 17A cystyrene marcarine power-M (mentioned above), and Tatsugirol 1000 (Sumitomo Chemical Co., Ltd.), a resin having a norbornene ring. (manufactured by Kogyo Co., Ltd., trade name) 10 parts, butyl cellosolve acedate 5
A dissolution reaction was carried out in 6 parts at 100°C for 1 hour to obtain a viscous resin. A resin composition was prepared by mixing 22 parts of this resin with 1.0 part of an amine complex of BP as a catalyst, 0.03 part of γ-glycidoxypropyl 1 to 1-1-1-1-1-1-1-1-1% disilane, and 57 parts of silver powder. (n) was produced.

Example 3 66 parts of epoxy resin EOCN103S (manufactured by Nihon Kapaku Co., Ltd., trade name), marcarinic force of parahydroxystyrene-M
(mentioned above) and 6 parts of Finton 1700 (manufactured by IEI Honshichion Co., Ltd. 1, trade name), a resin having a norbornene ring, were added
A dissolution reaction was carried out in ~117 parts at 100°C for 1 hour.
A viscous resin was obtained. To 22 parts of this resin, B was added as a catalyst.
A resin composition (III) was prepared by mixing 1.0 parts of an amine complex of P, 0.03 parts of γ-crisitoxypropyltrimethoxysilane, and 57 parts of silver powder.

Comparative Example A commercially available epoxy resin-based solvent-type semiconductor resin composition <IV) was obtained.

Resin compositions (I) (II) obtained in Examples 1 to 3 and comparative examples
), (I) and (IV), a semiconductor chip and a lead frame are bonded and cured to manufacture a cliff conductor device. The obtained semiconductor device was tested for adhesive strength, hydrolyzability, and moisture resistance, and the results are shown in Table 1, confirming the remarkable effects of the present invention. Each test was conducted as follows.

Adhesion strength is 200μm thick lead frame (copper type)
Four 4 mm silicon chips were glued on top, and measurements were taken using a push-pull gauge at a temperature of 350°C. Hydrolyzability was determined by curing under the same conditions as the semiconductor chip bonding conditions, then crushing into 100 mesh, and
Extraction was carried out by heating at °C for 2 hours, and the amount of C ions was measured using Ion Chroma 1. Moisture resistance is determined by a moisture resistance test in water vapor at a temperature of 121℃ and a pressure of 2 atmospheres
P CT ) and water vapor at a temperature of 120°C and a pressure of 2 atm.
Moisture resistance test by applying an applied voltage of 15 V DC (bias-P
Perform CT) on each semiconductor device and evaluate it. Sixty semiconductor devices were each used in this test, and the number of defects generated over time was indicated. The evaluation method was such that a semiconductor device was determined to be defective if the open circuit or leakage current due to corrosion of the aluminum electrodes constituting the semiconductor device increased to 500% or more of the allowable value.

3 [Effects of the Invention] As is clear from the above explanation and Table 1, the semiconductor device of the present invention exhibits excellent moisture resistance and hydrolysis resistance, and as a result, disconnection defects due to corrosion of the aluminum electrodes do not occur. First, there is less generation of voids and less warping of the adhesive chip. Furthermore, it has excellent adhesive properties, especially adhesive properties under heat, and is a highly reliable semiconductor device.

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Claims (1)

[Scope of Claims] 1 (A) a modified resin consisting of polyparahydroxystyrene and an epoxy resin, (B) a resin having a norbornene ring, (C) a silane coupling agent having a ureido group, and (D) electrical conductivity. 1. A semiconductor device characterized in that a semiconductor chip and a lead frame are adhesively fixed using a resin composition containing powder as an essential component.