JP2748318B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial application field) The present invention is characterized by a material for die bonding,
The present invention relates to a semiconductor device having excellent hydrolysis resistance and moisture resistance.

(Prior Art) A process of connecting a semiconductor chip such as an IC or an LSI to a predetermined portion on a thin metal plate (lead frame) is one of important processes that affect long-term reliability of a semiconductor device. Conventionally, as this connection method, the Au-Si eutectic method of heating and pressing the silicon surface of the chip to the gold plating surface on the lead frame has been the mainstream.

However, with the rise of precious metals, especially gold, in recent years,
The resin-encapsulated semiconductor device is rapidly shifting from the Au-Si eutectic method to a method using solder, a method using conductive paste, and the like.

(Problems to be Solved by the Invention) However, although a method using solder has been partially put to practical use, it is pointed out that solder or solder balls may scatter and adhere to electrodes and the like, which may cause corrosion disconnection. Have been. On the other hand, in the method using a conductive paste, an epoxy resin mixed with silver powder is usually used, and it has been partially put into practical use about 10 years ago. Satisfactory results were not obtained as compared to the eutectic method for producing alloys. When using a conductive paste, it has advantages such as superior heat resistance compared to the solder method, but on the other hand, because the resin and its hardener are not made for bonding semiconductor chips In many cases, the corrosion of the aluminum electrode is promoted, causing disconnection failure.
It was inferior to the Au-Si eutectic method. Furthermore, in recent years, semiconductor chips such as ICs, LSIs, and LEDs have tended to be cured at a high speed, and the generation of voids and a decrease in adhesive strength have become problems.

The present invention has been made in view of the above circumstances, and is capable of curing a semiconductor chip, shortening an assembly process, and has no wiring breakage due to corrosion, and has excellent adhesion, hydrolysis resistance, and moisture resistance. It is an object of the present invention to provide a highly reliable semiconductor device without generation of voids.

[Constitution of the Invention] (Means for Solving the Problems) The present inventors have conducted intensive studies to achieve the above object, and as a result, by using a resin composition described later, adhesiveness and hydrolysis resistance were obtained. It has been found that a highly reliable semiconductor device having excellent heat resistance and moisture resistance and less generation of voids can be obtained, and the present invention has been completed.

That is, the present invention provides (A) a modified resin composed of polyparahydroxystyrene and an epoxy resin, (B) a resin having a norbornene ring, (C) a silane-based coupling agent having a ureido group, and (D) a conductive powder. A semiconductor device characterized in that a semiconductor chip and a lead frame are adhered and fixed using a resin composition containing, as essential components.

The modified resin (A) composed of polyparahydroxystyrene and epoxy resin used in the present invention is obtained by mixing or reacting polyparahydroxystyrene and epoxy resin. The polyparahydroxystyrene used here is a resin represented by the following formula, For example, Marca Linker M (Maruzen Petrochemical Co., Ltd., trade name)
And the like. This resin has a molecular weight of 3000 to 8000 and a hydroxyl equivalent of about 120. Epoxy resins that are industrially produced and that can be effectively used in the present invention include, for example, diepoxides of the following bisphenols. Epikote 827,828,834,1001,1
002,1007,1009 (manufactured by Shell Chemical Company, trade name), DER330,33
1,332,334,335,336,337,660 (manufactured by Dow Chemical Company, trade name), Araldite GY250,260,280,6071,6084,6097,609
9 (manufactured by Ciba-Geigy, product name), EPI-REZ510,5101 (J
ONE.DABNEY, trade name), Epicron 810,1000,1010,
3010 (trade name, manufactured by Dainippon Ink and Chemicals), EP series (trade name, manufactured by Asahi Denka Co., Ltd.) and the like.

Further, by using, for example, a novolak epoxy resin having an average number of epoxy groups of 3 or more as the epoxy resin, the adhesive strength when heated (at 350 ° C.) can be further improved. These novolak epoxy resins have a molecular weight of 50
0 or more are suitable. Examples of industrially produced novolak epoxy resins include the following. Araldite EPN1138,1139, ECN12
73,1280,1299 (manufactured by Ciba-Geigy, trade name), DEN431,4
38 (manufactured by Dow Chemical Company, trade name), Epicoat 152,154
(Made by Shell Chemical Company, trade name), ERR-0100, ERRB-0447, E
RLB-0488 (manufactured by Union Carbide, trade name), EOCN
Series (made by Nippon Kayaku Co., Ltd., trade name) and the like. These epoxy resins can be used alone or in combination of two or more.

The polyparahydroxystyrene and the epoxy resin may be simply dissolved and mixed, or if necessary, may be subjected to a heat reaction to form a partial bond with each other. , The working viscosity can be improved. If necessary for the reaction, a curing catalyst may be used.

As the resin having a (B) norbornene ring used in the present invention has a petroleum resin, a general-purpose resin obtained from C ₅ -C ₉ fraction of the oil. Commercially available products include, for example, Celloxide 4000 (trade name, manufactured by Daicel), Tatsukiroll 1000 (trade name, manufactured by Sumitomo Chemical Co., Ltd.), Quinton 150
0,1000,1300 (manufactured by Zeon Corporation, trade name)
These may be used alone or in combination of two or more. The compounding ratio of the resin having a norbornene ring is 10% with respect to the total resin content.
It is desirable to mix up to 30% by weight. 10% by weight
If it is less than 30%, there is no effect on the improvement of the adhesive strength.

When polyparahydroxystyrene, an epoxy resin and a resin having a norbornene ring are simply dissolved and mixed in a solvent, the polyparahydroxystyrene may be added and dissolved at the same time, but the polyparahydroxystyrene is first dissolved in the solvent, and then the epoxy resin is dissolved. It is preferable to dissolve and mix the resin and the resin having a norbornene ring. Examples of the solvents used here include dioxane, hexane, benzene, toluene, solvent naphtha, industrial gasoline, cellosolve acetate, ethyl cellosolve, butyl cellosolve, butyl cellosolve acetate, butyl carbitol acetate, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, and the like. And these may be used alone or in combination of two or more.

As the silane coupling agent having a ureido group (C) used in the present invention, there are γ-ureidoethyltrimethoxysilane, γ-ureidopropyltrimethoxysilane and the like, and these are used alone or in combination of two or more. The proportion of the silane coupling agent having a ureide group is preferably 0.01 to 5 parts by weight based on 100 parts by weight of the conductive powder. More preferably, 0.05 to 1.0 part by weight is blended. If the amount is less than 0.01 part by weight, sufficient high-speed curability cannot be obtained, and if it exceeds 5 parts by weight, voids of the resin composition increase, which is not preferable.

As the (D) conductive powder used in the present invention, silver powder,
A metal powder having a silver layer on the surface is exemplified.

The resin composition used in the present invention contains, as essential components, a modified resin composed of polyparahydroxystyrene and an epoxy resin, a resin having a norbornene ring, a silane-based coupling agent having a ureide group, and a conductive powder. Other additives can be added and blended as necessary within a range not contrary to the purpose of the above. The method for producing this resin composition is as described above, after the modified resin described above, a resin having a norbornene ring, a silane-based coupling agent having a ureido group, a conductive powder and other components, and thoroughly mixed, and further, For example, a kneading process is performed using a three-roll mill, followed by defoaming under reduced pressure. The resin composition thus manufactured is filled in a syringe, discharged onto a lead frame using a dispenser, and after high-speed bonding of semiconductor chips, wire bonding and resin sealing are performed to manufacture a resin-sealed semiconductor device. I do.

(Examples) Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, “parts” means “parts by weight” unless otherwise specified.

Example 1 37.5 parts of epoxy resin epicoat 1001 (trade name, manufactured by Shell Chemical Co., Ltd.), 10 parts of Marukalinker M (trade name, manufactured by Maruzen Oil Co., Ltd.) of polyparahydroxystyrene, and Quinton 1300 of resin having a norbonene ring (Japan) Zeon,
10 parts of trade name were dissolved in 103 parts of diethylene glycol diethyl ether at 100 ° C. for 1 hour to obtain a viscous resin. This resin 22 parts, an amine complex of BF ₃ as catalyst 1.0
Parts and γ-glycidoxypropyltrimethoxysilane 0.
03 parts and 57 parts of silver powder were mixed to produce a resin composition (I).

Example 2 15.8 parts of epoxy resin Epicoat 828 (trade name, manufactured by Shell Chemical Co., Ltd.), 10 parts of Marukalinker M (described above) of polyparahydroxystyrene, and Tatsukilol 1000, a resin having a norbornene ring (manufactured by Sumitomo Chemical Co., Ltd. 10 parts of trade name were dissolved in 56 parts of butyl cellosolve acetate at 100 ° C. for 1 hour to obtain a viscous resin. In 22 parts of this resin,
And amine complex 1.0 part of BF ₃ as a catalyst was prepared and 0.03 parts of γ- glycidoxypropyl triethoxysilane, a mixture of a silver powder, 57 parts resin composition (II).

Example 3 Epoxy resin EOCN103S (trade name, manufactured by Nippon Kayaku Co., Ltd.) 66
Parts, 34 parts of Marcalinker M of parahydroxystyrene (described above) and 6 parts of Quinton 1700 (trade name, manufactured by Nippon Zeon Co., Ltd.) having a norbornene ring in 117 parts of butyl carbitol acetate at 100 ° C., 1 The dissolution reaction was performed for a time to obtain a viscous resin. In 22 parts of this resin, BF was used as a catalyst.
_A resin composition (III) was produced by mixing 1.0 part of the amine complex of No. ₃ , 0.03 part of γ-glycidoxypropyltrimethoxysilane, and 57 parts of silver powder.

Comparative Example A commercially available epoxy resin-based resin composition for a solvent-type semiconductor (IV) was obtained.

Resin compositions (I) obtained in Examples 1 to 3 and Comparative Example,
Using (II), (III) and (IV), a semiconductor device was manufactured by bonding and curing a semiconductor chip and a lead frame. The obtained semiconductor device was tested for adhesive strength, hydrolysis, and moisture resistance. The results are shown in Table 1. The remarkable effects of the present invention were confirmed. Each test was performed as follows.

Adhesive strength is 200μm thick lead frame (copper)
A 4 × 4 mm silicon chip was adhered on the top, and measurement was performed at 350 ° C. using a push-pull gauge. The hydrolyzability is
After curing under the same conditions as the semiconductor chip bonding conditions, 100
The mixture was pulverized into a mesh and subjected to heat extraction at 180 ° C. for 2 hours, and the amount of Cl ions was measured by ion chromatography. For each semiconductor, the moisture resistance test (PCT) in steam at a temperature of 121 ° C and a pressure of 2 atm and the humidity test (bias-PCT) in a steam at a temperature of 120 ° C and a pressure of 2 atm with an applied voltage of 15 V DC were applied. The device was evaluated. For each of the semiconductor devices subjected to this test, the number of failure occurrences with the passage of time was displayed for 60 semiconductor devices. In the evaluation method, the open or leak current due to the corrosion of the aluminum electrode constituting the semiconductor device increased to 500% or more of the allowable value, and was judged to be defective.

[Effects of the Invention] As is apparent from the above description and Table 1, the semiconductor device of the present invention exhibits excellent moisture resistance and hydrolysis resistance, and as a result, disconnection failure due to corrosion of the aluminum electrode does not occur. The occurrence of voids and warpage of the adhesive chip are small. In addition, the semiconductor device has excellent adhesiveness, particularly excellent adhesiveness when heated, and is a highly reliable semiconductor device.

Claims (1)

(57) [Claims] 1. A modified resin comprising (A) a polyparahydroxystyrene and an epoxy resin, (B) a resin having a norbornene ring, (C) a silane coupling agent having a ureido group, and (D) a conductive powder. A semiconductor device comprising a semiconductor chip and a lead frame adhered and fixed using a resin composition containing, as an essential component.