JPH0527251B2 - - Google Patents
Info
- Publication number
- JPH0527251B2 JPH0527251B2 JP59048253A JP4825384A JPH0527251B2 JP H0527251 B2 JPH0527251 B2 JP H0527251B2 JP 59048253 A JP59048253 A JP 59048253A JP 4825384 A JP4825384 A JP 4825384A JP H0527251 B2 JPH0527251 B2 JP H0527251B2
- Authority
- JP
- Japan
- Prior art keywords
- modified resin
- parts
- lead frame
- adhesive
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 239000003822 epoxy resin Substances 0.000 claims description 11
- 229920000647 polyepoxide Polymers 0.000 claims description 11
- 239000011342 resin composition Substances 0.000 claims description 9
- 239000000843 powder Substances 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 description 16
- 230000001070 adhesive effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000002904 solvent Substances 0.000 description 7
- 238000002156 mixing Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 230000007062 hydrolysis Effects 0.000 description 5
- 238000006460 hydrolysis reaction Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910015365 Au—Si Inorganic materials 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- LCFVJGUPQDGYKZ-UHFFFAOYSA-N Bisphenol A diglycidyl ether Chemical compound C=1C=C(OCC2OC2)C=CC=1C(C)(C)C(C=C1)=CC=C1OCC1CO1 LCFVJGUPQDGYKZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OWYWGLHRNBIFJP-UHFFFAOYSA-N Ipazine Chemical compound CCN(CC)C1=NC(Cl)=NC(NC(C)C)=N1 OWYWGLHRNBIFJP-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical class C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- -1 boron trifluoride amine Chemical class 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Die Bonding (AREA)
Description
［発明の技術分野］
本発明は、樹脂で封止した半導体素子に係り、
特に耐湿信頼性、耐加水分解性の優れた半導体素
子に関する。
［発明の技術的背景とその問題点］
金属薄番（リードフレーム）上の所定部分に
IC、LSI等の半導体チツプを接続する工程は、素
子の長期信頼性に影響を与える重要な工程の一つ
である。従来より、この接続方法としては、チツ
プ表面のSiをリードフレーム上のAuメツキ円に
加熱圧着するというAu−Siの共晶法が主流であ
つた。しかし近年の基金属、特にAuの高騰を契
機として、樹脂モールド半導体素子では、Au−
Si共晶法から、ハンダを使用する方法、導電性結
着剤を使用する方法などに急速に移行しつつあ
る。
しかし、ハンダを使用する方法は、一部実用化
されているが、ハンダやハンダボールが飛散して
電極等に付着し、腐食断線の原因となる可能性が
指摘されている。一方導電接着剤を使用する方法
では、通常Ag粉末を配合したエポキシ樹脂が用
いられて、約10年程前から一部実用化されてきた
が、信頼性の面でAu−Siの共晶合金を生成させ
る共晶法に比較して満足すべきものがなかつた。
導電性接着剤を使用する場合は、ハンダ法に比べ
て耐熱性に優れる等の長所を有しているが、その
反面、樹脂やその硬化剤が半導体素子接着用とし
て作られたものでないために、Al電極の腐食を
促進し断線不良の原因となる場合が多く素子の信
頼性はAu−Si共晶法に比べて劣つていた。さら
に近年IC／LSIやLED等の半導体素子価格を低滅
するためにリードフレーム上に銀メツキを施さな
い新しいタイプの半導体素子が種々検討されてい
るが、素子製造工程における導電性接着剤の接着
力不足やアウトガスによるワイヤーボンデイング
不良等のため著しく歩留りや信頼性に劣る欠点が
あつた。
［発明の目的］
本発明の目的は、上記の欠点に鑑みてなされた
もので、新規接着剤と銀メツキを施さないリード
フレームを使用して、接着性、ワイヤーボンデイ
ング性、耐加水分解性に優れ、耐湿信頼性を大幅
に向上させるとともに製造価格で低減できる半導
体素子を提供しようとするものである。
［従来の概要］
上記の目的を達成すべく、鋭意研究を重ぬた結
果、次に示す変性樹脂組成物を接着剤とする半導
体素子が従来のものに比べて接着性、耐加水分解
性、耐湿信頼性に優れていることを見出した。
即ち、(A)ポリパラヒドロキシスチレンとエポキ
シ樹脂とを溶解または加熱反応せしめてなる変性
樹脂および(B)導電性粉末とを主成分とする変性樹
脂組成物を用いて半導体チツプと銀メツキを施さ
ないリードフレームとが接着されていることを特
徴とする半導体素子である。
本発明において用いるポリパラヒドキシスチレ
ンは次式で表される。
このような樹脂としては、例えば丸善石油社製
のマルゼンレジンＭ（商品名）がある。これは分
子量3000〜8000で水酸基当量は約120である。
また、本発明に使用するエポキシ樹脂のうち、
工業生産されており、かつ本発明に効果的に使用
し得るものとしては、例えば次のようなビスフエ
ノール類のジエポキシドがある。シエル化学社製
エピコート827、828、834、1001、1002、1004、
1007、1009、ダウケミカル社製 DER330、331、
332、334、335、336、337、660、661、662、667、
668、669、チバ・ガイギー社製アラルダイト
GY250、260、280、6071、6084、6097、6099、
Junes Dabney 社製Epi−Rez510、5101、大日
本インキ化学工業社製エピクロン810、1000、
1010、3010（いずれも商品名）。
さらに本発明においては、エポキシ樹脂として
平均エポキシ基数３以上の、例えばノボラツク・
エポキシ樹脂を使用することにより、熱時（350
℃）の接着強度を更に向上させることが可能であ
る。使用するノボラツク・エポキシ樹脂としては
分子量500以上のものが適している。このような
ノボラツク・エポキシ樹脂で工業生産されている
ものとしては、例えば次のようなものがある。チ
バ・ガイギー社製アラルダイトEPN1138、1139、
ECN1273、1280、1299、ダウケミカル社製
DEN431、438、シエル化学社製エピコート152、
154、ユニオン・カーバイド・コーポレーシヨン
社製ERR−0100、ERRB−0447、ERLB−0488、
日本化薬社製EOCNシリーズである。
ポリパラヒドロキシスチレンとエポキシ樹脂は
当量付近で配合される。配合割合が当量付近を大
きくはずれると、いずれかが硬化時に未反応とな
つて、熱時の接着強度や加熱減量が多くなり好ま
しくない。
本発明で使用する変性樹脂は、ポリパラヒドロ
キシスチレンとエポキシ樹脂を単に溶解混合して
も良いし、必要であれば加熱反応により相互に部
分的な結合をさせたものでも良く、これらの変性
樹脂の共通の溶剤することにより作業粘度を改善
することができる。また必要であれば硬化触媒を
使用しても良い。
ポリパラヒドロキシスチレンとエポキシ樹脂と
を単に溶解混合する場合は、溶剤に同時に添加し
溶解させるようにしてもよいが、最初に後者を溶
剤に溶解させた後、前者を溶解混合させることが
望ましい。またここで使用される溶剤類として
は、ジオキサン、ヘキサノン、ベンゼン、トルエ
ン、ソルベントナフサ、工業用ガソリン、酢酸セ
ロソルブ、エチルセロソルブ、ブチルセロソルブ
アセテート、ブチルアルビトールアセテート、ジ
メチルホルムアミド、ジメチルエアセトアミド、
Ｎ−メチルピロリドン等がある。これらの溶剤は
単独又は２種以上の組合せで使用される。
本発明に使用される導電性粉末としては、例え
ばAg等、が使用される。また必要であれば消泡
剤、カツプリング剤等を添加することもできる。
本発明に用いる銀メツキを施さないリードフレ
ームとしては、銀メツキされていないもの総ての
ものが挙げられ、通常主に銅系リードフレーム、
鉄系リードフレーム等が用いられる。
本発明の半導体素子は、常法に従い上述した変
性樹脂および導電性粉末を十分に混合した後、更
に例えば三本ロールによる混練処理を施し、得ら
れた変性樹脂組成物を半導体チツプと銀メツキを
施さないリードフレームの接着剤として使用した
後、ワイヤボンデイングを行ない、その後に半導
体素子を封止して製造する。こうして得られた素
子は、200℃で加熱硬化させてもリードフレーム
面上に汚染がなく、接着力は半導体素子接着の場
合必要な0.5Kg／１mm角の値以上、ワイヤーボン
デイング強度も同じく４〜５ｇの値以上の数値を
得ることができる。
［発明の効果］
前述のごとき変性樹脂組成物を接着剤として使
用することによつて半導体チツプと銀メツキを施
さないリードフレームとの接着性、特に熱時の接
着性および金線によるワイヤーボンデイング性が
向上し、耐加水分解性に優れ、金属の腐食による
断線などの不良や水分によるリーク電流の不良な
どを著しく低減させることができ、耐湿信頼性が
従来のものに比べて大幅に改善され、かつ安価な
半導体素子を得ることができる。
［発明の実施例］
次に実施例により本発明を説明する。以下
「部」とは特に説明のない限り「重量部」を意味
する。
実施例 １
エピコート1001の37.5部とマルゼンレジンM10
部とを、ブチルカルビトールアセテート103部で
100℃、１時間溶解反応を行い粘稠な褐色変性樹
脂を得た。この変性樹脂22部に、触媒として三弗
素化ホウ素のアミン錯体1.0部と銀紛末57部とを
混合して変性樹脂組成物をつくり接着剤Ａを得
た。
実施例 ２
エピコート828の15.8部とマルゼンレジンM10
部とを、ブチルセロソルブアセテート56部で100
℃、１時間溶解反応を行い粘稠な褐色の変性樹脂
を得た。この変性樹脂22部と銀粉末57部とを混合
して変性樹脂組成物を作り接着剤Ｂを得た。
実施例 ３
EOCN103S（日本化薬社製商品名）66部をブチ
ルカルビトールアセテート117部の溶剤中で80℃
で溶解後、マルゼンレジンM34部と触媒として三
弗化ホウ素のアミン錯体0.6部とを添加し、80℃
でそのまま反応を進め約３時間反応後、粘稠で透
明な変性樹脂を得た。この変性樹脂部22部と銀粉
末57部とをよく混合して変性樹脂組成物とし、こ
れを接着剤Ｃとした。
実施例１〜３で得た接着剤Ａ，Ｂ，Ｃおよび市
販のエポキシ樹脂ベースの半導体用接着剤Ｄ（比
較例）を作用して銀メツキを施さない銅系リード
フリームと半導体チツプを接着して半導体素子を
作り、その特性を測定し第１表に示した。
[Technical Field of the Invention] The present invention relates to a semiconductor element sealed with resin,
In particular, the present invention relates to a semiconductor element having excellent moisture resistance reliability and hydrolysis resistance. [Technical background of the invention and its problems]
The process of connecting semiconductor chips such as ICs and LSIs is one of the important processes that affects the long-term reliability of devices. Conventionally, the mainstream connection method has been the Au-Si eutectic method, in which Si on the chip surface is heat-pressed to the Au plating circle on the lead frame. However, due to the recent rise in the price of base metals, especially Au, resin-molded semiconductor devices are
The Si eutectic method is rapidly transitioning to methods using solder, conductive binders, etc. However, although some methods using solder have been put into practical use, it has been pointed out that the solder and solder balls may scatter and adhere to electrodes and the like, causing corrosion and disconnection. On the other hand, in the method of using conductive adhesive, epoxy resin mixed with Ag powder is usually used, and it has been partially put into practical use for about 10 years, but in terms of reliability, Au-Si eutectic alloy There was nothing satisfactory compared to the eutectic method that produces .
When using a conductive adhesive, it has advantages such as superior heat resistance compared to the soldering method, but on the other hand, the resin and its curing agent are not made for bonding semiconductor devices. This often accelerates corrosion of the Al electrode and causes disconnection, and the reliability of the device is inferior to that of the Au-Si eutectic method. Furthermore, in recent years, various new types of semiconductor devices that do not require silver plating on the lead frame have been studied in order to reduce the cost of semiconductor devices such as IC/LSI and LEDs, but the adhesive strength of conductive adhesives during the device manufacturing process There were shortcomings such as poor wire bonding due to shortages and outgassing, resulting in significantly poor yields and reliability. [Object of the Invention] The object of the present invention was made in view of the above-mentioned drawbacks, and it is an object of the present invention to improve adhesion, wire bonding properties, and hydrolysis resistance by using a new adhesive and a lead frame without silver plating. The present invention aims to provide a semiconductor element which has excellent moisture resistance and reliability, and which can be manufactured at a reduced manufacturing cost. [Conventional Overview] In order to achieve the above objectives, as a result of extensive research, semiconductor devices using the following modified resin composition as an adhesive have improved adhesiveness, hydrolysis resistance, and It was found that it has excellent moisture resistance and reliability. That is, a semiconductor chip and silver plating were applied using a modified resin composition whose main components were (A) a modified resin obtained by dissolving or heat-reacting polyparahydroxystyrene and an epoxy resin, and (B) conductive powder. This is a semiconductor device characterized in that a lead frame is bonded to a lead frame. The polyparahydroxystyrene used in the present invention is represented by the following formula. An example of such a resin is Maruzen Resin M (trade name) manufactured by Maruzen Sekiyu Co., Ltd., for example. It has a molecular weight of 3,000 to 8,000 and a hydroxyl equivalent of about 120. Furthermore, among the epoxy resins used in the present invention,
Examples of diepoxides of bisphenols that are industrially produced and can be effectively used in the present invention include the following bisphenol diepoxides. Epicoat 827, 828, 834, 1001, 1002, 1004, manufactured by Ciel Chemical Co., Ltd.
1007, 1009, Dow Chemical DER330, 331,
332, 334, 335, 336, 337, 660, 661, 662, 667,
668, 669, Ciba Geigy Araldite
GY250, 260, 280, 6071, 6084, 6097, 6099,
Junes Dabney Epi-Rez510, 5101, Dainippon Ink & Chemicals Co., Ltd. Epi-Rez 810, 1000,
1010, 3010 (both product names). Furthermore, in the present invention, the epoxy resin has an average number of epoxy groups of 3 or more, such as novolac.
By using epoxy resin, when heated (350
It is possible to further improve the adhesion strength at (°C). The suitable novolac epoxy resin to be used is one with a molecular weight of 500 or more. Examples of industrially produced novolak epoxy resins include the following: Ciba Geigy Araldite EPN1138, 1139,
ECN1273, 1280, 1299, manufactured by Dow Chemical Company
DEN431, 438, Epicoat 152 manufactured by Ciel Chemical Co., Ltd.
154, Union Carbide Corporation ERR-0100, ERRB-0447, ERLB-0488,
This is the EOCN series manufactured by Nippon Kayaku Co., Ltd. Polyparahydroxystyrene and epoxy resin are blended at approximately equivalent weights. If the blending ratio deviates significantly from the equivalent range, some of them will remain unreacted during curing, resulting in increased adhesive strength and loss on heating, which is undesirable. The modified resin used in the present invention may be obtained by simply dissolving and mixing polyparahydroxystyrene and epoxy resin, or may be partially bonded to each other by heating reaction if necessary. The working viscosity can be improved by using common solvents. A curing catalyst may also be used if necessary. When simply dissolving and mixing polyparahydroxystyrene and epoxy resin, they may be added to a solvent at the same time and dissolved, but it is preferable to first dissolve the latter in the solvent and then dissolve and mix the former. The solvents used here include dioxane, hexanone, benzene, toluene, solvent naphtha, industrial gasoline, cellosolve acetate, ethyl cellosolve, butyl cellosolve acetate, butyl arbitol acetate, dimethylformamide, dimethylacetamide,
Examples include N-methylpyrrolidone. These solvents may be used alone or in combination of two or more. As the conductive powder used in the present invention, for example, Ag or the like is used. Further, if necessary, an antifoaming agent, a coupling agent, etc. can be added. The non-silver-plated lead frame used in the present invention includes all non-silver-plated lead frames, usually mainly copper-based lead frames,
A steel lead frame or the like is used. The semiconductor element of the present invention is produced by thoroughly mixing the above-mentioned modified resin and conductive powder according to a conventional method, and then subjecting the resulting modified resin composition to a kneading process using, for example, three rolls, and then applying the resulting modified resin composition to a semiconductor chip and silver plating. After using it as an adhesive for a lead frame that is not bonded, wire bonding is performed, and then semiconductor devices are sealed and manufactured. The thus obtained device has no contamination on the lead frame surface even when heated and cured at 200°C, the adhesive strength is higher than the value of 0.5 kg/1 mm square required for bonding semiconductor elements, and the wire bonding strength is also 4 to 4. It is possible to obtain a value greater than the value of 5g. [Effects of the Invention] By using the above-mentioned modified resin composition as an adhesive, it is possible to improve the adhesion between a semiconductor chip and a lead frame without silver plating, especially the adhesion under heat and the wire bonding property with gold wire. It has excellent hydrolysis resistance, significantly reduces defects such as disconnection due to metal corrosion and leakage current defects due to moisture, and has greatly improved moisture resistance reliability compared to conventional products. Moreover, an inexpensive semiconductor element can be obtained. [Examples of the Invention] Next, the present invention will be explained with reference to Examples. Hereinafter, "parts" means "parts by weight" unless otherwise specified. Example 1 37.5 parts of Epicote 1001 and Maruzen Resin M10
and 103 parts of butyl carbitol acetate.
A dissolution reaction was carried out at 100°C for 1 hour to obtain a viscous brown modified resin. Adhesive A was obtained by mixing 22 parts of this modified resin with 1.0 part of an amine complex of boron trifluoride as a catalyst and 57 parts of silver powder to prepare a modified resin composition. Example 2 15.8 parts of Epicote 828 and Maruzen Resin M10
and 100 parts with 56 parts of butyl cellosolve acetate.
A dissolution reaction was carried out at ℃ for 1 hour to obtain a viscous brown modified resin. Adhesive B was obtained by mixing 22 parts of this modified resin and 57 parts of silver powder to prepare a modified resin composition. Example 3 66 parts of EOCN103S (trade name manufactured by Nippon Kayaku Co., Ltd.) was heated at 80°C in a solvent containing 117 parts of butyl carbitol acetate.
After dissolving at 80°C, 34 parts of Maruzen Resin M and 0.6 parts of boron trifluoride amine complex as a catalyst were added.
The reaction was continued for about 3 hours, and a viscous and transparent modified resin was obtained. 22 parts of this modified resin part and 57 parts of silver powder were thoroughly mixed to form a modified resin composition, which was used as adhesive C. Adhesives A, B, and C obtained in Examples 1 to 3 and a commercially available epoxy resin-based semiconductor adhesive D (comparative example) were used to bond a copper-based lead frame that was not silver-plated and a semiconductor chip. A semiconductor device was manufactured using the same method, and its characteristics were measured and are shown in Table 1.
【表】【table】
【表】
上記試験に供した半導体装置の数は各々60個で
あり、時間経過に伴う不良発生数を第１表に中に
示した。尚、評価の方法は、半導体素子を構成す
るアルミニウム電極の腐食によるオープン又はリ
ーク電流が許容値の500％以上への上昇をもつて
不良と判定した。
本発明は、第１表で明らかなように接着強度、
耐加水分解性に優れ、特に加水分解性CIイオン
が少ないため、十分な信頼性を有している。[Table] The number of semiconductor devices subjected to the above tests was 60 each, and the number of defects generated over time is shown in Table 1. The evaluation method was such that an open circuit or leakage current due to corrosion of the aluminum electrode constituting the semiconductor element increased to 500% or more of the allowable value, and the semiconductor element was judged to be defective. As is clear from Table 1, the present invention has adhesive strength,
It has excellent hydrolysis resistance and has sufficient reliability, especially since it contains few hydrolyzable CI ions.
Claims (1)
樹脂とを溶解または加熱反応せしめてなる変性
樹脂、および (B) 導電性粉末 を主成分とする変性樹脂組成物を用いて半導体チ
ツプと銀メツキを施さないリードフレームとが接
着されていることを特徴とする半導体素子。[Scope of Claims] 1. Semiconductor chips using (A) a modified resin obtained by dissolving or heat-reacting polyparahydroxystyrene and an epoxy resin, and (B) a modified resin composition containing conductive powder as a main component. and a lead frame that is not silver-plated are bonded to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59048253A JPS60193349A (en) | 1984-03-15 | 1984-03-15 | Semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59048253A JPS60193349A (en) | 1984-03-15 | 1984-03-15 | Semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60193349A JPS60193349A (en) | 1985-10-01 |
| JPH0527251B2 true JPH0527251B2 (en) | 1993-04-20 |
Family
ID=12798279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59048253A Granted JPS60193349A (en) | 1984-03-15 | 1984-03-15 | Semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60193349A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6428928A (en) * | 1987-07-24 | 1989-01-31 | Toshiba Chem Corp | Semiconductor device |
| US5156771A (en) * | 1989-05-31 | 1992-10-20 | Kao Corporation | Electrically conductive paste composition |
-
1984
- 1984-03-15 JP JP59048253A patent/JPS60193349A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60193349A (en) | 1985-10-01 |
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