JPS61237436A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS61237436A
JPS61237436A JP7845985A JP7845985A JPS61237436A JP S61237436 A JPS61237436 A JP S61237436A JP 7845985 A JP7845985 A JP 7845985A JP 7845985 A JP7845985 A JP 7845985A JP S61237436 A JPS61237436 A JP S61237436A
Authority
JP
Japan
Prior art keywords
resin
adhesive
bismaleimide
semiconductor chip
triazine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7845985A
Other languages
Japanese (ja)
Inventor
Teru Okunoyama
奥野山　輝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Chemical Corp
Original Assignee
Toshiba Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Chemical Corp filed Critical Toshiba Chemical Corp
Priority to JP7845985A priority Critical patent/JPS61237436A/en
Publication of JPS61237436A publication Critical patent/JPS61237436A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856—Pre-cured adhesive, i.e. B-stage adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

PURPOSE:To improve hydrolitic resistance, moisture resistance and reliability of a semiconductor element and at the same time to realize high speed assembly of the semiconductor element by a method wherein a semiconductor chip is made to adhere and fixed to a lead frame with adhesive composed of modified resin, which is composed of specific resin and epoxy resin, and inorganic filler. CONSTITUTION:Adhesive is applied to the back of a semiconductor chip and then, in the semi-cured condition, the semiconductor chip is made to adhere and fixed to a lead frame. The adhesive consisting of resin whose main components are bismaleimide and triazine resin monomer, epoxy resin and inorganic filler is employed. The resin whose main components are bismaleimide and triazine resin monomer is the resin whose main components are bismaleimide shown by the formula I and dicyanate shown by the formula II and has triazine rings in which at least 3mol of dicyanate shown by the formula II are cyclopolymerized in its molecule and has a cyanate raducal at the end of its molecule and, for instance, triazine resin shown by the formula III. By employing such adhesive, excellent hydrolitic resistance and moisture resistance are provided and, as there is not cause of errosion disconnection such as sputtering of solder, high reliability is also provided.

Description

【発明の詳細な説明】 ［発明の技術分野］ 本発明は、耐加水分解性、耐湿特等信頼性に優れ、製造
工程を短縮できる半導体素子の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for manufacturing a semiconductor element that has excellent reliability such as hydrolysis resistance and moisture resistance, and can shorten the manufacturing process.

［発明の技術的背景とその問題点］ リードフレーム等基板上の所定部分にＩＣ。[Technical background of the invention and its problems] IC is placed on a predetermined part of a board such as a lead frame.

ＬＳＩ等の半導体チップを接続する工程は、素子の長期
信頼性に影響を与える重要な工程の一つである。　従来
、この接続方法としては、チップ裏のＳｉ面をリードフ
レーム上のＡｕメッキ面に加熱圧着するＡｕ−８ｔの共
晶法が主流であった。The process of connecting semiconductor chips such as LSI is one of the important processes that affects the long-term reliability of the device. Conventionally, the mainstream connection method has been the Au-8t eutectic method, in which the Si surface on the back of the chip is heat-pressed to the Au-plated surface on the lead frame.

しかし近年の貴金属、特にＡＵの高騰を契機として、樹
脂モールド半導体素子では、Ａｕ−８ｉ共晶法からハン
ダを使用する方法、導電性接着剤を使用する方法などに
急速に移行しつつある。However, with the rise in the price of precious metals, especially AU, in recent years, resin molded semiconductor devices are rapidly shifting from the Au-8i eutectic method to methods using solder, conductive adhesives, and the like.

［背景技術の問題点］ しかし、ハンダを使用する方法では、ハンダやハンダボ
ールが飛散して電極などに付着し、腐食断線の原因とな
る可能性が指摘されている。　一方導電性接着剤を使用
する方法では、約１０年程前からＡｇ粉末を配合したエ
ポキシ樹脂が用いられて、実用化されてきたが、耐加水
分解、耐湿性等信頼性の面でＡＩＪ−８：の共晶を生成
させる共晶法に比較して満足すべきものがなかった。　
ｓＮ性接着剤を使用する場合は、ハンダ法に比べて耐熱
性に優れる等の長所を有しているが、その反面樹脂やそ
の硬化剤が半導体素子接着用として作られたものでない
ために、ＡＩ電極の腐食を促進し断熱不良の原因となる
場合が多く、素子の信頼性はＡｕ−８ｉ共品法に比べて
劣っていた。　また導電性接着剤を使用した場合は、デ
ィスペンサーで吐出し、半導体チップをその上にのせ、
次いでオーブンで２００℃前後で２時間硬化させるとい
うように、組立工程に長時間を要する欠点があった。[Problems with Background Art] However, in the method using solder, it has been pointed out that the solder and solder balls may scatter and adhere to electrodes, etc., causing corrosion and disconnection. On the other hand, in the method of using conductive adhesive, epoxy resin mixed with Ag powder has been used for about 10 years and has been put into practical use, but AIJ- 8: There was nothing satisfactory compared to the eutectic method of producing a eutectic.
When using SN adhesive, it has advantages such as superior heat resistance compared to soldering, but on the other hand, because the resin and its curing agent are not made for bonding semiconductor devices, This often promoted corrosion of the AI electrode and caused poor insulation, and the reliability of the device was inferior to the Au-8i method. In addition, when using conductive adhesive, dispense it with a dispenser, place the semiconductor chip on top of it, and
The assembly process had the drawback of requiring a long time, as it was then cured in an oven at around 200°C for 2 hours.

［発明の目的］ 本発明の目的は、従来の欠点を解消するためになされた
もので、新規な接着剤を用いて、耐加水分解性、耐湿性
に優れ、信頼性を大幅に向上させるとともに、半導体素
子の組立て速度の向上により製造工程を短縮して製造価
格を低減できる半導体素子の製造方法を提供しようとす
るものである。[Object of the Invention] The object of the present invention was to overcome the drawbacks of the conventional adhesives, and by using a new adhesive, it has excellent hydrolysis resistance and moisture resistance, and greatly improves reliability. , it is an object of the present invention to provide a method of manufacturing a semiconductor device that can shorten the manufacturing process and reduce the manufacturing cost by increasing the assembly speed of the semiconductor device.

［発明の概要］ 本発明者は、上記の目的を達成しようと鋭意研究を重ね
た結果、半導体チップの裏面に後述の新規接着剤を塗布
し半硬化状態にすることによって、容易にリードフレー
ムと接合でき、信頼性の向上と製造工程の短縮が図れる
ことを見いだし、本発明に至ったものである。　即ち、
本発明は、（Ａ）（ａ）ビスマレイミドとトリアジン樹
脂モノマーとを主成分とする樹脂、及び（ｂ）エポキシ
樹脂からなる変性樹脂、並びに （Ｂ）無機質充填剤を 含む接着剤を、半導体チップの裏面に塗布した後半硬化
状態とし、次いで半導体チップとリードフレームとを接
着固定することを特徴とする半導体素子の製造方法であ
る。[Summary of the Invention] As a result of intensive research aimed at achieving the above object, the present inventor has discovered that by applying a new adhesive described below to the back surface of a semiconductor chip and making it semi-cured, it is possible to easily form a lead frame. The inventors have discovered that it is possible to bond, improve reliability, and shorten the manufacturing process, leading to the present invention. That is,
The present invention applies an adhesive containing (A) a resin containing bismaleimide and triazine resin monomer as main components, (b) a modified resin consisting of an epoxy resin, and (B) an inorganic filler to a semiconductor chip. This method of manufacturing a semiconductor element is characterized in that the semiconductor chip is coated on the back side of the semiconductor chip to be in a semi-cured state, and then the semiconductor chip and the lead frame are bonded and fixed.

本発明に用いる（ａ）ビスマレイミドとトリアジン樹脂
モノマーとを主成分とする樹脂は、一般式 ％式％（１） （但しく１）式中Ａｒ　ｊは同−又は異なる２価の芳香
族基を示す）で表されるビスマレイミドと、一般式　Ｎ
＝Ｃ−０−Ａｒ・−〇−Ｃ＝Ｎ・・・（２） で表されるジシアネートとを主成分とする樹脂であり、
分子中に上記（２）式のジシアネートが３分子以上環化
重合したトリアジン環を有し、分子末端にシアネート基
を有する例えば次のような構造式を有するトリアジン樹
脂 ・・・　（３） （但し式（２）、（３）中Ａ　ｒ　２は同−又は異なる
２価の芳香族基を示す） である。(a) The resin containing bismaleimide and triazine resin monomer as main components used in the present invention has the general formula % formula % (1) (However, in formula 1) Ar j is the same or different divalent aromatic group. ) and bismaleimide represented by the general formula N
=C-0-Ar・-〇-C=N...(2) A resin whose main component is dicyanate represented by:
A triazine resin having a triazine ring formed by cyclopolymerizing three or more molecules of dicyanate of formula (2) above in its molecule, and having a cyanate group at the end of the molecule, for example, having the following structural formula... (3) (However, In formulas (2) and (3), Ar 2 represents the same or different divalent aromatic groups.

このような樹脂としては、例えば三菱瓦斯化学社製のＢ
Ｔレジン（商品名）がある、、　ＢＴレジンは、西独バ
イエル社の開発したトリアジンムレジン（商品名）とビ
スマレイミドとを主原料とする耐熱性付加重合型熱硬化
性樹脂であって、これらのレジンは、それぞれ次のよう
にして製造されている。Examples of such resin include B manufactured by Mitsubishi Gas Chemical Co., Ltd.
There is T Resin (trade name). BT Resin is a heat-resistant addition polymerization type thermosetting resin whose main raw materials are triazine resin (trade name) and bismaleimide developed by Bayer AG, West Germany. The resins are manufactured as follows.

なお、ＢＴレジンの硬化後の分子溝道は次のようなもの
であろうと推定されている。It is estimated that the molecular grooves of the BT resin after curing are as follows.

このようなりＴレジンとしては、次のような銘柄が市販
されており、そのいずれも本発明に使用することができ
る。The following brands of such T-resin are commercially available, and any of them can be used in the present invention.

また本発明に使用される（ｂ）エポキシ樹脂のうち、工
業生産されており、かつ本発明に効果的に使用し得るも
のとして、例えば次のようなビスフェノール類のジエボ
キシドがある。　シェル化学社、エビ：）　−ト（Ｅｌ
）ｉｋｏｔｅ）８２７，８２８゜８３４．１００１，１
００２．１００４゜１００７．１００９゜　ダウケミカ
フ１社、ＤＥＲ３３０，３３１，３３２，３３４，３３
５゜３３６．３３７，６６０，６６１，６６２゜６６７
．６６８，６６９゜　チバ・ガイギー社、アラルダイト
（Ａｒａｌｄｉｔｅ　）ＧＹ２５０．２６０゜２８０．
６０７１．６０８４，６０９７゜６０９９゜　Ｊ　ｏｎ
ｅｓＤ　ａｂｎｅｙ社、Ｅｐｉ−Ｒｅｚ５１０．５１０
１゜　大日本インキ化学工業社、エビクロン８１０．１
０００．１０１０゜３０１０（以上いずれも商品名）。Among the epoxy resins (b) used in the present invention, those that are industrially produced and can be effectively used in the present invention include, for example, the following bisphenol dieboxides. Shell Chemical Co., Ltd., Shrimp: ) -t (El
) ikote) 827,828°834.1001,1
002.1004゜1007.1009゜ Dow Chemi Cuff 1 Company, DER330, 331, 332, 334, 33
5゜336.337,660,661,662゜667
．． 668,669° Ciba Geigy, Araldite GY250.260°280.
6071.6084,6097゜6099゜ J on
esDabney, Epi-Rez510.510
1゜ Dainippon Ink & Chemicals Co., Ltd., Ebikuron 810.1
000.1010°3010 (all of the above are product names).

更に本発明においては、エポキシ樹脂として平均エポキ
シ基数３以上の、例えばノボラック・エポキシ樹脂を使
用することにより、熱時（３５０℃）の接着強度を更に
向上させることが可能である。Furthermore, in the present invention, by using a novolac epoxy resin having an average number of epoxy groups of 3 or more as the epoxy resin, it is possible to further improve the adhesive strength at high temperatures (350° C.).

使用するノボラック・エポキシ樹脂としては、分子量５
００以上のものが適している。The novolak epoxy resin used has a molecular weight of 5.
00 or more is suitable.

このようなノボラックエポキシ樹脂で工業生産されてい
るものとしては、例えば次のようなものがある。Examples of such novolak epoxy resins that are industrially produced include the following.

チバ・ガイギー社、アラルダイト（Ａ　ｒａｌｄｉｔｅ
　）ＥＰＮ１１３８．ＥＰＮ１１３９．ＥＣＮ１２７３
、ＥＣＮ１２８０．ＥＣＮ１２９９゜ダウケミカフ１社
、ＥＥＮ４３１．ＤＥＮ４３８゜シェル化学社、エピコ
ート（Ｅ　ｐｉｋｏｔｅ）　１５２　。Ciba Geigy, Araldite
)EPN1138. EPN1139. ECN1273
, ECN1280. ECN1299゜Dow Chemi Cuff 1 Company, EEN431. DEN438° Shell Chemical Co., Ltd., Epikote 152.

１５４゜　ユニオン・カーバイド・コーポレーション社
、ＥＲＲ−０１００，ＥＲＲＢ−０４４７゜ＥＲＬＢ−
０４４８゜ （ａ　）のビスマレイミドとトリアジン樹脂モノマーと
を主成分とする樹脂と、（ｂ　）のエポキシ樹脂との配
合割合は、５：９５〜７０　：　３０　（重量比）の範
囲にあることが望ましい。　　（ａ　）のビスマレイミ
ドとトリアジン樹脂モノマーを主成分とする樹脂の配合
割合が前記の範囲より少ないと得られる接着剤の軟化温
度が低くなって、熱時の接着力が乏しくなり、逆に前記
の範囲より多くなると得られる接着剤の可撓性が低下す
る。154゜ Union Carbide Corporation, ERR-0100, ERRB-0447゜ERLB-
0448° The blending ratio of the resin whose main components are bismaleimide and triazine resin monomer (a) and the epoxy resin (b) may be in the range of 5:95 to 70:30 (weight ratio). desirable. If the blending ratio of the resin whose main components are bismaleimide and triazine resin monomer (a) is less than the above range, the softening temperature of the resulting adhesive will be low, resulting in poor adhesive strength when heated; When the amount exceeds the range of , the flexibility of the resulting adhesive decreases.

本発明の（ａ　）ビスマレイミドとトリアジン樹脂モノ
マーを主成分とする樹脂と、（ｂ　’）エポキシ樹脂と
を混合するにあたっては、これらの樹脂の共通の溶剤に
同時に添加し溶解させてもよいが、最初に後者を溶剤に
溶解させ、次に前者を溶解させることが望ましい。　前
記の溶剤としては、アセトン、メチルエチルケトン、ジ
オキサン、ヘキサノン、ベンゼン、トルエン、ソルベン
トナフサ。When mixing (a) the resin whose main components are bismaleimide and triazine resin monomers and (b') the epoxy resin of the present invention, these resins may be added and dissolved in a common solvent at the same time. , it is desirable to first dissolve the latter in a solvent and then the former. Examples of the solvent include acetone, methyl ethyl ketone, dioxane, hexanone, benzene, toluene, and solvent naphtha.

工業用ガソリン、酢酸セロソルブ、エチルセロソルブ、
ジメチルホルムアミド、ジメチルアセトアミド、Ｎ−メ
チルピロリドン等がある。　これらの溶剤は単独もしく
は２種以上の組合せで使用する。Industrial gasoline, cellosolve acetate, cellosolve ethyl,
Examples include dimethylformamide, dimethylacetamide, N-methylpyrrolidone, and the like. These solvents may be used alone or in combination of two or more.

本発明に用いる（Ｂ）無機質充填剤としては、導電性充
填剤および非導電性充填剤が使用できる。As the inorganic filler (B) used in the present invention, conductive fillers and non-conductive fillers can be used.

導電性充填剤としては、銀粉末、ニッケル粉末。Silver powder and nickel powder are used as conductive fillers.

銅粉末、複合金属粉末等が挙げられ、また非導電性充填
剤としてはシリカ、アルミナ、ボロンナイトライド。二
酸化モリブデンが挙げられ、これらはいずれも単独又は
２種以上の組合せで使用する。Examples include copper powder, composite metal powder, etc., and non-conductive fillers include silica, alumina, and boron nitride. Examples include molybdenum dioxide, and any of these may be used alone or in combination of two or more.

無機質充填剤の配合員は、（Ａ）変性樹脂１００重量部
に対して、２００〜８００重量部配合することが好まし
い。　　２００重量部未満ではチクソ性が低く作業性が
劣り、また８００重量部を超えるとかさぼりが大きくな
りペースト状にならず、好ましくない。The inorganic filler is preferably blended in an amount of 200 to 800 parts by weight based on 100 parts by weight of the modified resin (A). If it is less than 200 parts by weight, the thixotropy is low and workability is poor, and if it exceeds 800 parts by weight, it becomes bulky and does not become paste-like, which is not preferable.

本発明の半導体素子の製造方法は、常法に従い上述した
変性樹脂および無機質充填剤を十分混合する。　更に例
えば三本ロールによる混線処理をして接着剤を製造した
。　この接着剤を半導体チップの裏面に塗布した後、加
熱によって半硬化状態とし、リードフレームに２５０℃
〜３５０℃で数十秒間の加熱で接着固定する。　その後
、チップ表面の電極とリード間には常法によってワイヤ
ボンディングを行い半導体素子を封止する。　半導体チ
ップの裏面に接着剤を塗布する方法としては、一般的な
スクリーン印刷法で良く、例えば２００メツシユ、２５
μ■厚となるテトロンスクリーンを用いて塗布できる。In the method for manufacturing a semiconductor device of the present invention, the above-mentioned modified resin and inorganic filler are thoroughly mixed according to a conventional method. Furthermore, an adhesive was manufactured by carrying out a cross-wire treatment using, for example, three rolls. After applying this adhesive to the back side of the semiconductor chip, heat it to a semi-cured state, and then apply it to the lead frame at 250°C.
Bond and fix by heating at ~350°C for several tens of seconds. Thereafter, wire bonding is performed between the electrodes and leads on the chip surface by a conventional method to seal the semiconductor element. A general screen printing method may be used to apply the adhesive to the back surface of the semiconductor chip, for example, 200 mesh, 25 mesh, etc.
Can be applied using a Tetron screen with a thickness of μ■.

　また半硬化状態とする加熱条件としては、変性樹脂溶
解に使用した溶剤の種類によっても多少異なるが約８０
℃で１時間、表面のタックがなくなる程度の加熱でよい
。The heating conditions for semi-curing the modified resin vary depending on the type of solvent used to dissolve the modified resin, but the heating conditions are approximately 80%
It may be heated at ℃ for 1 hour to the extent that the tack on the surface disappears.

［発明の効果］ 本発明の半導体素子の製造方法は、新規な接着剤を使用
しており、耐加水分解性および耐湿性に優れており、ま
たハンダ等が飛散して腐食断線の原因となることもない
ため信頼性を大幅に向上させることができる。　また半
導体チップの裏面にこの接着剤を塗布半硬化状態にして
いるため、組、立て速度を向上させ、かつ、製造工程を
短縮し製造価格を低減させることができ、工業上大変有
利な半導体素子の製造方法である。[Effects of the Invention] The method for manufacturing a semiconductor element of the present invention uses a new adhesive, which has excellent hydrolysis resistance and moisture resistance, and prevents solder etc. from scattering and causing corrosion and disconnection. Therefore, reliability can be greatly improved. In addition, since this adhesive is applied to the back side of the semiconductor chip and is in a semi-cured state, it is possible to improve the assembly and assembly speed, shorten the manufacturing process, and reduce the manufacturing cost, making it a highly advantageous semiconductor device in industry. This is a manufacturing method.

［発明の実施例］ 以下、実施例により本発明を具体的に説明する。[Embodiments of the invention] Hereinafter, the present invention will be specifically explained with reference to Examples.

以下「部」とは特に説明のない限り「重量部」を示す。Hereinafter, "parts" means "parts by weight" unless otherwise specified.

　本発明は、本実施例によって限定されるものではない
。The present invention is not limited to this example.

実施例　１ エピコート８２８の８０部と、ＢＴ−２１００（樹脂１
００％）１００部とを、ソルベントナフサ１１０部とシ
クロへキサノン１１０部とからなる混合溶剤中で１２０
℃、１時間溶解反応を行い粘稠な褐色の変性樹脂を得た
。　この変性樹脂５５部と銀粉末７５部を混合して半導
体用の接着剤（Ａ）を製造した。Example 1 80 parts of Epikote 828 and BT-2100 (resin 1
00%) in a mixed solvent consisting of 110 parts of solvent naphtha and 110 parts of cyclohexanone.
A dissolution reaction was carried out at ℃ for 1 hour to obtain a viscous brown modified resin. 55 parts of this modified resin and 75 parts of silver powder were mixed to produce an adhesive (A) for semiconductors.

実施例　２ エピコート８２７の１００部を、ソルベントナフサ９０
部とシクロへキサノン９０部との混合溶剤中で９０℃で
溶解後、ＢＴ−２１７０（樹脂１００％）１０部を添加
して均一に溶解させ、粘稠で透明な変性樹脂を得た。　
この変性樹脂６６部とシリカ粉末５０部とをよく混合し
て半導体用の接着剤（Ｂ）を製造した。Example 2 100 parts of Epicote 827 was added to 90 parts of solvent naphtha.
After dissolving at 90° C. in a mixed solvent of 90 parts of cyclohexanone and 90 parts of cyclohexanone, 10 parts of BT-2170 (100% resin) was added and uniformly dissolved to obtain a viscous and transparent modified resin.
66 parts of this modified resin and 50 parts of silica powder were thoroughly mixed to produce an adhesive (B) for semiconductors.

実施例　３ ＥＣＮ１２８０　（チバ・ガイギー社製商品名）２００
部をシクロへキサノン６００部の溶剤中で８０℃で溶解
後、ＢＴ−２１００（樹脂１００％）２００部を配合し
、１００℃で混合して粘稠で透明な変性樹脂を得た。　
この変性樹脂６２部と銀粉末７５部とをよく混合して半
導体用の接着剤（Ｃ）を製造した。Example 3 ECN1280 (product name manufactured by Ciba Geigy) 200
After dissolving 600 parts of cyclohexanone in a solvent at 80°C, 200 parts of BT-2100 (100% resin) was added and mixed at 100°C to obtain a viscous and transparent modified resin.
62 parts of this modified resin and 75 parts of silver powder were thoroughly mixed to produce an adhesive (C) for semiconductors.

実施例１〜３で得た半導体用の接着剤（Ａ）。Adhesive for semiconductors (A) obtained in Examples 1 to 3.

（Ｂ）、（Ｃ）と市販のエポキシ樹脂ベースの半導体用
接着剤（比較例）を２００メツシユ、２５μｍ厚のテト
ロンスクリーンを用いて半導体チップの裏面に塗布し、
８０℃で１時間加熱して半硬化状態とした。　次いで２
５０℃で２０秒間加熱して半導体チップとリードフレー
ムを接着固定して半導体素子を作り、接着強度、耐加水
分解性、耐湿性試験を行った。　その結果を第１表に示
した。　第１表から明らかなように、本発明は、接着強
度、耐加水分解性、耐湿性に優れていると同時に極めて
短時間で半導体素子を製造できるという顕著な効果が認
められた。(B), (C) and a commercially available epoxy resin-based semiconductor adhesive (comparative example) were applied to the back side of the semiconductor chip using a 200 mesh, 25 μm thick Tetron screen.
It was heated at 80° C. for 1 hour to bring it into a semi-cured state. then 2
The semiconductor chip and lead frame were adhesively fixed by heating at 50° C. for 20 seconds to prepare a semiconductor element, and tests for adhesive strength, hydrolysis resistance, and moisture resistance were conducted. The results are shown in Table 1. As is clear from Table 1, the present invention has the remarkable effect of being excellent in adhesive strength, hydrolysis resistance, and moisture resistance, and at the same time, being able to manufacture semiconductor elements in an extremely short time.

第１表 子を接着しそれぞれの温度でプッシュプルゲージを用い
て測定した。The first face was adhered and measured using a push-pull gauge at each temperature.

＊２：接着剤を第１表の条件で硬化後１８０℃×２時間
加熱して抽出した値。*2: Value extracted by heating the adhesive at 180°C for 2 hours after curing under the conditions shown in Table 1.

＊３：ａ！度１２１℃、圧力２気圧の水蒸気中における
耐湿試験（ＰＣＴ）及び温度１２０℃、圧力２気圧の水
魚気中印加電圧直流１５Ｖで通電して行う耐湿試験（バ
イアス−ＰＣＴ）を各半導体装置について実施して評価
した。*3: a! A humidity test (PCT) in water vapor at 121 degrees Celsius and 2 atmospheres pressure, and a humidity resistance test (bias-PCT) conducted in water vapor at 120 degrees Celsius and 2 atmospheres pressure with an applied voltage of 15 V DC were conducted for each semiconductor device. and evaluated.

上記試験に供した半導体装置の数は各々６０個であり、
時間経過に伴う不良発生数を第１表中に示した。　尚、
評価の方法は、半導体素子を構成するアルミニウム電極
の腐食によるオープン、又はリーク電流が許容値の５０
０％以上への上昇をもって不良と判定した。The number of semiconductor devices subjected to the above tests was 60 each,
The number of defects generated over time is shown in Table 1. still,
The evaluation method is to detect open circuits due to corrosion of the aluminum electrodes that make up the semiconductor element, or to detect leakage currents that are within the allowable value of 50.
An increase to 0% or more was determined to be defective.

Claims (1)

【特許請求の範囲】 １（Ａ）（ａ）ビスマレイミドとトリアジン樹脂モノマ
ーとを主成分とする樹脂、 及び（ｂ）エポキシ樹脂からなる変 性樹脂、並びに （Ｂ）無機質充填剤、 を含む接着剤を、半導体チップの裏面に塗布した後半硬
化状態とし、次いで該半導体チップとリードフレームと
を接着固定することを特徴とする半導体素子の製造方法
。 ２（ａ）ビスマレイミドとトリアジン樹脂モノマーとを
主成分とする樹脂と、（ｂ）エポキシ樹脂との配合割合
は、重量比で５：９５〜７０：３０である特許請求の範
囲第１項記載の半導体素子の製造方法。[Scope of Claims] 1 (A) An adhesive comprising (a) a resin whose main components are bismaleimide and triazine resin monomers, (b) a modified resin consisting of an epoxy resin, and (B) an inorganic filler. A method for manufacturing a semiconductor device, comprising: coating the backside of a semiconductor chip in a semi-cured state, and then adhesively fixing the semiconductor chip and a lead frame. 2. Claim 1, wherein the blending ratio of (a) a resin whose main components are bismaleimide and triazine resin monomer and (b) an epoxy resin is 5:95 to 70:30 by weight. A method for manufacturing a semiconductor device.
JP7845985A 1985-04-15 1985-04-15 Manufacture of semiconductor element Pending JPS61237436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7845985A JPS61237436A (en) 1985-04-15 1985-04-15 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7845985A JPS61237436A (en) 1985-04-15 1985-04-15 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS61237436A true JPS61237436A (en) 1986-10-22

Family

ID=13662608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7845985A Pending JPS61237436A (en) 1985-04-15 1985-04-15 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS61237436A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000071614A1 (en) * 1999-05-21 2000-11-30 Miguel Albert Capote High performance cyanate-bismaleimide-epoxy resin compositions for printed circuits and encapsulants
US6616984B1 (en) 1997-10-10 2003-09-09 Miguel Albert Capote Forming viaholes in composition of cyanate, bismaleimide, epoxy resin and unsaturated aromatic glycidyl
US6833629B2 (en) 2001-12-14 2004-12-21 National Starch And Chemical Investment Holding Corporation Dual cure B-stageable underfill for wafer level
JP2005513192A (en) * 2001-12-14 2005-05-12 ナショナル スターチ アンド ケミカル インベストメント ホールディング コーポレーション Two-stage curing B-stageable adhesive for die attachment

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131740A (en) * 1982-01-30 1983-08-05 Nitto Electric Ind Co Ltd Manufacture of semiconductor device
JPS58153338A (en) * 1982-03-08 1983-09-12 Toshiba Chem Corp Semiconductor element
JPS59143335A (en) * 1983-02-03 1984-08-16 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58131740A (en) * 1982-01-30 1983-08-05 Nitto Electric Ind Co Ltd Manufacture of semiconductor device
JPS58153338A (en) * 1982-03-08 1983-09-12 Toshiba Chem Corp Semiconductor element
JPS59143335A (en) * 1983-02-03 1984-08-16 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6616984B1 (en) 1997-10-10 2003-09-09 Miguel Albert Capote Forming viaholes in composition of cyanate, bismaleimide, epoxy resin and unsaturated aromatic glycidyl
WO2000071614A1 (en) * 1999-05-21 2000-11-30 Miguel Albert Capote High performance cyanate-bismaleimide-epoxy resin compositions for printed circuits and encapsulants
US6833629B2 (en) 2001-12-14 2004-12-21 National Starch And Chemical Investment Holding Corporation Dual cure B-stageable underfill for wafer level
JP2005513192A (en) * 2001-12-14 2005-05-12 ナショナル スターチ アンド ケミカル インベストメント ホールディング コーポレーション Two-stage curing B-stageable adhesive for die attachment
JP2011063805A (en) * 2001-12-14 2011-03-31 National Starch & Chemical Investment Holding Corp Dual cure b-stageable adhesive for die attach

Similar Documents

Publication Publication Date Title
JPS61237436A (en) Manufacture of semiconductor element
JPH03188180A (en) Conductive film adhesive, method for adhesion, semiconductor device, and preparation of semiconductor device
JPS63132435A (en) Semiconductor element
JPS58153338A (en) Semiconductor element
JP3786409B2 (en) adhesive
JPH03192178A (en) Adhesive sheet for die bonding
JPS63161014A (en) Electrically conductive resin paste
JPS61108679A (en) Adhesive composition
JPS6261336A (en) Semiconductor element
JPS60193349A (en) Semiconductor element
JP2904536B2 (en) Adhesive composition for semiconductor device
JPS6140371A (en) Joining varnish
JPH0153502B2 (en)
JPS58131740A (en) Manufacture of semiconductor device
JPS62285429A (en) Manufacture of semiconductor device
JPS5966129A (en) Semiconductor element
JPS61237435A (en) Semiconductor element
JPS62218413A (en) Paste
JPS63120432A (en) Semiconductor element
JPH0212508B2 (en)
JP2741677B2 (en) Semiconductor element
JPH052915A (en) Semiconductor device
JPH0945725A (en) Semiconductor device manufacturing method
JPH04342903A (en) Conductive paste
JPH0462941A (en) Compound semiconductor device