JPS63132435A - Semiconductor element - Google Patents

Abstract

PURPOSE:To bond-fix and remove IC chips or condenser chips easily at low temperature and within a short time by means of using tetraglycylglyamine represented by specific structural formulas and conductive bonding agent containing conductive powder. CONSTITUTION:Tetraglycylglyamine represented by structural formulas and conductive bonding agent containing conductive powder are applicable to the title semiconductor element. In said formulas, R represents dialiphatic group, diaromatic group and dialicyclic group. IC chips are condenser chips can be easily bonded to one another at low temperature and within a short time using said bonding agent. The bonded chips are provided with bonding strength resistant to wire bonding process at 200 deg.C. In order to replace any defective chips, they can removed easily at the temperature of around 250 deg.C.

Description

Detailed Description of the Invention [Objective of the Invention] (Industrial Field of Application) The present invention relates to a semiconductor device such as a hybrid IC in which a capacitor chip is in contact with the semiconductor device, and a defective chip etc. is heated to 250°C. The present invention relates to a semiconductor element that can be easily removed with a moderate amount of heat and replaced with a non-defective chip.

(Prior art) A hybrid IC is equipped with several to dozens of IG chips, capacitor chips, etc. on one board, and if even one of these chips becomes defective, the board itself will be destroyed. had to be declared defective, which was extremely inconvenient. It is now necessary to replace only defective chips and eliminate board defects.

The conductive adhesive for IC/LSI die bonding that is used to bond chips with conventional hybrid ICs is designed to have a bonding temperature of 250 to 350°C, so once the chip is bonded and fixed, it may cause defective chips. It was difficult to remove the chip by heating it to i++ degrees. In addition, it has been a problem that the entire substrate is not heated to about 300° C. for a long period of time in order to remove one defective chip because it has a considerable effect on the reliability of other semiconductor elements.

(Problems to be Solved by the Invention) The present invention was made in order to solve the above problems. The aim is to provide fjP with semiconductor elements that have adhesive strength that can withstand the be.

[Structure of the Invention] (Means for Solving Problem tA) The present inventors have worked hard to achieve the above object.
As a result of repeated research, we have found that by using a conductive adhesive with the composition described below, IC chips and capacitor chips can be easily bonded and fixed at low temperatures in a short time, and the adhered chips can be easily removed. He discovered that it was possible to do this, and completed this book 5N Ming.

That is, the present invention provides: (△) Tetraglycidylamine represented by the following general formula (wherein R represents a divalent aliphatic group, aromatic a group, or alicyclic group) (B) Conductive This is a semiconductor element using a conductive adhesive containing a conductive powder or (C) an epoxy resin if necessary.

The (A>tetraglycidylamine used in the present defense) may be one represented by the following general formula (wherein R represents a 2illb fatty 1+X group, an aromatic group, or an alicyclic group), Various types of R can be used depending on the required properties of the conductive adhesive, such as heat resistance and workability.Specific compounds include, for example, TETR.
AD-C, TETRAD-D.

Ding El RAD-X, TETRAD-Y (manufactured by Mitsubishi Kasei Co., Ltd., product name), Er2O3 (manufactured by Yuka Shell Epoxy Co., Ltd.,
(trade name), and these may be used alone or in combination of two or more.

Although all types of epoxy resins can be used as the epoxy resin (C) used in the present invention, the main epoxy resins are polyepoxy resins having two or more epoxy groups in one molecule.

Specifically, bisphenol A type, halogenated bisphenol type, resorcin type, bisphenol F type, polyalcohol/polyglycol type, novolak type, tetrahydroxyphenylethane type, glycerin triether type,
Examples include polyolefin type, epoxidized soybean oil, dicyclopentadiene oxide, vinylcyclohexene dioxide, etc., and these can be used alone or in combination of two or more.

In the adhesive used in the present invention, (Δ) tetraglycidylamine (first invention) or (A) tetraglycidylamine and (C) epoxy resin (second invention) are used as a binder. In normal cases, only tetraglycidylamine (△) is sufficient, but if necessary, for example, when high heat resistance is not required as a conductive adhesive, (A)
Epoxy resin (C) is blended with tetraglycidylamine to form a binder. (A) Tetraglycidylamine and (C) epoxy resin are mixed together [(A):(C) is preferably in a weight ratio of 90:10 to 10:90, more preferably 70:30. ~40:60. If the blending ratio of tetraglycidylamine is less than 10 parts by weight and 1a parts, sufficient heat welding strength J3 and heat resistance cannot be obtained, which is undesirable.If it exceeds 90 parts by weight, the reaction proceeds too much and the product becomes hard and brittle. Therefore, it is better to limit it within the above range.

The conductive powder (B) used in the present invention may be in the form of flakes or scales, but in particular, spherical or resin-coated metal powders such as silver, copper, and nickel with an average particle size of 10 μm or less are used. Preferably used. The blending ratio of the conductive powder is (A) tetraglycidylamine or (A)
) The ratio of the binder consisting of tetraglycidylamine and (C) epoxy resin is determined. The ratio of the conductive powder to the binder is preferably in the range of 70+30 to 90:10 by weight. When the conductive powder is less than 70, sufficient conductivity cannot be obtained, and when it exceeds 90, workability and adhesive strength are reduced, and both cases are unfavorable.

In the conductive adhesive used in the present invention, as a curing catalyst, those used for ordinary -a type epoxy resin adhesives can be used as they are, for example, imidazole-based, dicyandiamide-imidazole-based, etc. catalysts are used. .

In addition, various solvents can be used to adjust the viscosity, such as butyl cellosolve, ethyl cellosolve, bubyl cellosolve acetate, and ethyl cellosolve acetate.
, butyl carpitol abitate is used in combination of two or more types. In order to make it solvent-free, a liquid low-viscosity epoxy resin or an epoxy monomer can be used.

The conductive adhesive used in the present invention can be easily produced by blending the above components and kneading them uniformly using three rolls, etc.)
It can be old. After applying the conductive adhesive to a predetermined location using a dispenser, screen printing, bottle transfer method, etc., a capacitor chip, etc. is placed on it after a few seconds to several hours, and it is heated and cured to create a semiconductor element. . This conductive adhesive can be cured under various curing conditions;
or oven curing for 90 minutes at 120°C, or heat tub curing for several tens of seconds at 200°C or higher (cock curing is preferred).

(Examples) Next, the present invention will be explained by examples, but the present invention is not limited by the following examples.

Examples 1 to 5 Each component shown in Table 1 was kneaded three times using three rolls to obtain a conductive adhesive. After dispensing and applying the iq conductive adhesive to the gold-plated pads on the aluminum substrate, a 4.5 x 6.5 mm IC chip and a 1.8 x 1.9 m capacitor chip were mounted on the board. A semiconductor device was manufactured by heat curing at a temperature of °C for 30 minutes. This semiconductor device was tested for bonding, chip peelability at 250°C, adhesive strength, and moisture resistance, and the results were presented in the first
As shown in the table, the title effect of the present invention was observed in all cases.

Comparative Example 1 In Example 2, tetraglycidylamine (TETR
A conductive adhesive and a semiconductor element were obtained in the same manner as in Example 2, except that AD-C) was removed, and the same tests as in Example were conducted, and the results are shown in Table 1.

Comparative Example 2 A test similar to that of the example was conducted using a commercially available conductive adhesive for IC/LSI die bonding, and the results are shown in Table 1.

*1: Manufactured by Yuka Ciel Epogishi Co., Ltd., product name; Ni2: Manufactured by Mitsubishi Kasei Co., Ltd., product name: l: 3H Manufactured by Yuka Ciel Epogishi Co., Ltd., product name *4:
Number of chips that suffered chip peeling in a bonding test of 300 IC chips at 200℃*! i: Heat for 20 seconds on a heat board at 250℃
? After 4 days, a test was conducted to see if the chip could be peeled off with a force of C1112. (Chips size is 4゜5X6,511
m>#i 6: 4,5x 6,5mm1 The nine-piece breaking strength was measured when the side surface of the C chip was pushed horizontally with a push-pull gauge (Examples 1 to 5). The curing condition of Comparative Example was 150°C for 30 minutes, and the curing condition of Comparative Example 2 was 200°C.
(60 minutes).

: l Near; Humidity test (PCT) in hot water at a temperature of 121°C and a pressure of 2 atmospheres, and a temperature of 120°C.

A moisture resistance test (bias-PCT) was performed on each semiconductor element by applying an applied voltage of 15 V DC in water vapor at a pressure of 2 atmospheres, and the semiconductor elements were evaluated.

The number of semiconductor elements subjected to this test was 60 each.

As for the evaluation method, if the A-bun due to corrosion of the aluminum electrode constituting the semiconductor element or the leakage Ti flow exceeds 50% of the correction value, it is determined to be defective.

[Effect of bright light] As is clear from the above explanation and the results in Table 1,
According to the semiconductor device of the present invention, IC chips and capacitor chips can be bonded in a cylinder at low temperature and layer time, and the bonded chips have an adhesive strength tg that can withstand wire bonding at 200°C, while defective chips can be replaced. In some cases, defective chips can be easily removed with heat of about 250° C., so the yield rate and reliability of semiconductor devices are high, and the present invention has a large T aggregate value.

Claims (1)

[Claims] 1(A) Tetraglycidylamine represented by the following general formula, and ▲numerical formulas, chemical formulas, tables, etc.▼ (However, in the formula, R is a divalent aliphatic group, an aromatic group, represents an alicyclic group) (B) A semiconductor element using a conductive adhesive containing conductive powder. 2(A) Tetraglycidylamine represented by the following general formula and ▲ Numerical formulas, chemical formulas, tables, etc. ▼ (However, in the formula, R represents a divalent aliphatic group, aromatic group, or alicyclic group) A semiconductor element using (B) a conductive powder and (C) a conductive adhesive containing an epoxy resin. 3. The blending ratio [(A)/(C)] of (A) tetraglycidylamine and (C) epoxy resin is 90/1 by weight.
3. The semiconductor device according to claim 2, wherein the semiconductor element is within the range of 0 to 10/90.