JP2767606B2 - Semiconductor element - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial application field) The present invention relates to a semiconductor element having excellent moisture resistance and adhesion, which can cope with an increase in the size of a semiconductor chip and adoption of various frames (widely) Semiconductor device).

(Prior Art) In the manufacture of a semiconductor device, a process of bonding a semiconductor chip such as an IC or an LSI to a predetermined portion on a thin metal plate (lead frame) is one of the important processes that affect the long-term reliability of the semiconductor device. One. Conventionally, as this bonding method, the Au-Si eutectic method in which a silicon surface of a semiconductor chip is pressure-bonded to a gold-plated surface on a lead frame has been mainly used.
In recent years, the rise in precious metals, especially gold, has triggered a rapid shift in resin-encapsulated semiconductor devices from the Au-Si eutectic method to a method using solder and a method using insulating paste (adhesive). I am doing it.

(Problems to be Solved by the Invention) However, although some of the methods using solder have been put to practical use, it has been pointed out that solder and solder balls are scattered and adhere to electrodes and the like, which causes corrosion disconnection. Have been. On the other hand, the method using an insulating paste has an advantage that an epoxy resin containing silica powder or the like has been practically used for about 10 years, and has superior heat resistance as compared with the soldering method.

The method using an insulating paste, on the other hand, promotes corrosion of the aluminum electrode due to impurities contained in the paste, because the resin and curing agent used are not made for bonding the semiconductor chip, and the disconnection occurs. This often caused a failure, and the reliability of the device was still inferior to that of the Au-Si eutectic method. In recent years, with the increase in the size of semiconductor chips such as IC / LSIs and LEDs, and the emergence of various types of frames such as Cu materials, a decrease in chip adhesive strength has become a problem. Was requested.

The present invention has been made in view of the above circumstances and disadvantages, and has excellent moisture resistance, excellent adhesiveness, without causing disconnection failure due to corrosion of an aluminum electrode, reducing warpage of a large chip, and having high reliability. It is intended to provide a semiconductor device.

[Structure of the Invention] (Means for Solving the Problems) The present inventors have conducted intensive studies to achieve the above object, and as a result, the above object is achieved by using a resin composition described later. That is, the present invention has been completed. That is, the present invention provides a semiconductor chip and a lead frame using a resin composition containing (A) an epoxy compound, (B) a curing agent, (C) an epoxy resin having a benzophenone-based imide group, and (D) an insulating powder. And a resin sealing.

 Hereinafter, the present invention will be described in detail.

As the epoxy compound (A) that can be used effectively in the present invention, the following are among the industrially produced ones. For example, Epikote 827,828,834,1001,1
002,1007,1009 (Ciel Chemical Co., trade name), DER330,33
1,332,334,335,336,337,660 (manufactured by Dow Chemical Company, trade name), Araldite GY250,260,280,6071,6084,6097,6
099 (Ciba-Geigy Co., trade name), EPI-REZ510,5101
(Manufactured by JONE DABNEY, trade name), Epicron 810,1000,1
010, 3010 (trade name, manufactured by Dainippon Ink and Chemicals, Inc.) and EP series manufactured by Asahi Denka Co., Ltd. Further, the epoxy compound has an average number of epoxy groups of 3 or more and a molecular weight of 500
The above is desirable. For example, by using a novolak epoxy resin that satisfies such conditions, it is possible to use a hot (35
0 ° C.) can be further improved. As novolak epoxy resin, for example, Araldite EPN
-1138,1139, ECN1273,1280,1299 (manufactured by Ciba Geigy,
DEN431,438 (manufactured by Dow Chemical Company, trade name), Epicoat 152,154 (manufactured by Ciel Chemical Co., Ltd.), ERR-0100, ERRB-0447, ERLB-0488 (Union
Carbide Co., trade name) and Nippon Kayaku Co., Ltd. EOCN series. These epoxy compounds can be used alone or
Mix and use more than one species. Further, the above epoxy compound may be diluted with a monofunctional low viscosity epoxy compound.

As the curing agent (B) used in the present invention, any one that can be used as a usual curing agent for epoxy resins can be used. These curing agents include, for example, an imidazole compound, a phenol compound, a polyamine compound, an acid anhydride compound, and the like, and may be used alone or in combination of two or more.

The epoxy resin (C) having a benzophenone-based imide group used in the present invention is a resin having an epoxy group and a benzophenone-based imide group in one compound. Things can be used.

The mixing ratio of the epoxy resin having a benzophenone-based imide group is determined by the total amount of the resin components excluding the insulating powder [(A)
+ (B) + (C)], preferably from 5 to 80% by weight. If the amount is less than 5% by weight, there is no effect in improving the adhesive strength, and if it exceeds 80% by weight, the reactivity tends to be poor, which is not preferable.

The (D) insulating powder used in the present invention desirably does not contain impurity ions such as alkali metals and halogen ions. Therefore, if necessary, impurities are removed by washing with ion-exchanged water or ion-exchange resin. Examples of such insulating powder include non-oxide ceramic powders such as carborundum, boron carbide, boron nitride, aluminum nitride, and titanium nitride, and oxide powders such as beryllium, magnesium, aluminum, titanium, and silicon. And
These may be used alone or in combination of two or more. Each of these insulating powders preferably has an average particle size of 10 μm or less. If the average particle size exceeds 10 μm, the properties of the composition do not become a paste, and the coating performance deteriorates.

In the resin composition used in the present invention, an organic solvent can be used as needed for viscosity adjustment. Examples of the organic solvent include methyl cellosolve, ethyl cellosolve, butyl cellosolve, acetates thereof, diethylene glycol diethyl ether, and the like, and these can be used alone or in combination of two or more.

The resin composition used in the present invention is an epoxy compound, a curing agent, an epoxy resin having a benzophenone-based imide group,
And an insulating powder as an essential component, but an antifoaming agent, a coupling agent, a curing catalyst, and other additives can be added and blended as necessary unless the object of the present invention is violated.
This resin composition is an epoxy compound, a curing agent, an epoxy resin having a benzophenone-based imide group according to a conventional method,
After the insulating powder and other components are blended and sufficiently mixed, kneading treatment is further performed by, for example, a three-roll mill, followed by defoaming under reduced pressure.

In the semiconductor element of the present invention, the above-described resin composition filled in a syringe is discharged onto a lead frame using a dispenser, and the semiconductor chip and the lead frame are bonded and fixed, then wire-bonded, and sealed with a sealing resin. Then, the semiconductor device can be manufactured.

(Examples) Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, “parts” means “parts by weight” unless otherwise specified.

Example 1 7.6 parts of epoxy resin EP4400 (trade name, manufactured by Asahi Denka Co., Ltd.)
5.6 parts of Marcalinker M (trade name, manufactured by Maruzen Petrochemical Co., Ltd.) of parahydroxystyrene, 0.2 parts of an epoxy resin having a benzophenone-based imide group, 10.4 parts of γ-glycidoxypropyltrimethoxysilane, and 4.0 parts of diethylene glycol diethyl ether At 100 ° C. for 1 hour to obtain a viscous brown resin. In 27.8 parts of this resin,
A resin composition (A) was produced by mixing 0.006 parts of the imidazole compound 2PHZ-CN (trade name, manufactured by Shikoku Chemicals) as a catalyst and 30 parts of silica powder.

Example 2 20.0 parts of an epoxy resin Epicoat 828 (trade name, manufactured by Ciel Chemical Co., Ltd.), 0.1 part of an epoxy resin having a benzophenone-based imide group, and 4.0 parts of diethylene glycol diethyl ether were subjected to a dissolution reaction at 100 ° C. for 1 hour to obtain a viscous solution. A light brown resin was obtained. To 27.8 parts of this resin, 0.006 part of an imidazole compound 2PHZ-CN (described above) as a catalyst and 30 parts of silica powder were mixed to produce a resin composition (B).

Example 3 Epoxy resin Epicoat 828 (supra) 10.0 parts, FOCN103
10.0 parts of S (trade name, manufactured by Nippon Kayaku Co., Ltd.), 0.1 part of an epoxy resin having a benzophenone-based imide group, and 4.0 parts of butyl cellosolve were subjected to a dissolution reaction at 100 ° C. for 1 hour to obtain a viscous brown resin. 27.8 parts of this resin, 2P as a catalyst
A resin composition (C) was produced by mixing 0.006 parts of HZ-CN (described above) and 30 parts of silica powder.

Comparative Example A commercially available epoxy resin-based conductive paste for solvent-type semiconductors (D) was obtained.

Using the resin compositions (A), (B), and (C) of Examples 1 to 3 and the conductive paste (D) of the comparative example, a semiconductor chip and a lead frame were connected, and wire bonding was performed. Each of the semiconductor elements was manufactured by resin sealing with a sealing agent. An adhesion test was performed on this semiconductor element, and the result was not inferior to the result of the comparative example. Regarding the moisture resistance, a moisture resistance test (PCT) in steam at a temperature of 121 ° C. and a pressure of 2 atm, and a moisture resistance test (bias-PCT) in a steam at a temperature of 120 ° C. and a pressure of 2 atm with an applied voltage of 15 V DC. Performed and evaluated. Sixty semiconductor devices were subjected to this test, and the number of defective occurrences over time was measured. The method of evaluation was determined to be defective when the open or leak current due to corrosion of the aluminum electrode constituting the semiconductor element increased to 500% or more of the allowable value. The results of the moisture resistance are shown in Table 1, and a remarkable effect of the present invention was confirmed. Further, the warpage of the bonded large chip (4 × 12 mm) was confirmed, but was extremely good.

[Effects of the Invention] As is clear from the above description and Table 1, the semiconductor element of the present invention is excellent in moisture resistance and adhesiveness, has no disconnection failure due to corrosion of the aluminum electrode, and reduces warpage of the semiconductor chip. Reliable.

Claims (1)

(57) [Claims] A semiconductor chip and a lead frame are formed by using a resin composition containing (A) an epoxy compound, (B) a curing agent, (C) an epoxy resin having a benzophenone-based imide group, and (D) an insulating powder. A semiconductor element characterized by bonding and fixing with a resin.