JPH02278855A - Semiconductor element - Google Patents

Abstract

PURPOSE:To improve a moistureproof property and a bonding property, to prevent a defect of a disconnection by corrosion of an aluminum electrode, to reduce a warp of a large-sized chip and to enhance reliability by a method wherein a semiconductor chip and a lead frame are bonded and fixed by using a specific resin composition and a resin sealing operation is executed. CONSTITUTION:An epoxy compound, a hardener, an epoxy resin having a benzophenone-based imide group and a resin composition containing an insulating powder are kneaded and treated; after that, air bubbles are removed under a low pressure. Then, this composition is filled into a syringe; it is discharged on a lead frame by using a dispenser; a semiconductor chip and the lead frame are bonded and fixed; after that, a wire bonding operation is executed; this assembly is sealed with a sealing resin. Thereby, a moisture-proof property and a bonding property are made excellent; a defect of a disconnection by corrosion of an aluminum electrode is eliminated; a warp of the semiconductor chip is reduced; reliability is enhanced.

Description

[Detailed Description of the Invention] [Objective of the Invention] (Industrial Application Field) The present invention provides a semiconductor element (widely (also refers to semiconductor devices).

(Prior Art) In the manufacture of semiconductor devices, the process of bonding semiconductor chips such as ICs and LSIs to predetermined portions of thin metal plates (lead frames) is one of the important processes that affects the long-term reliability of semiconductor devices. It is one.

Conventionally, the mainstream bonding method has been the AU-S* eutectic method, in which the silicon surface of the semiconductor chip is pressure-bonded to the gold-plated surface of the lead frame. In recent years, with the rise in the price of precious metals, especially gold, there has been a rapid shift in resin-encapsulated semiconductor devices from the Au-3i method to methods that use solder and insulating paste (adhesive). It is being done.

(Problem to be solved by the invention) However, although some methods of using solder in a single layer have been put into practical use, solder and solder balls may scatter and adhere to electrodes, etc., causing corrosion and disconnection. It has been pointed out. On the other hand, the method of using an insulating paste, usually an epoxy resin mixed with silica powder, etc., has been in practical use for about 10 years, and has advantages such as superior heat resistance compared to the soldering method.

On the other hand, the method of using insulating paste has the disadvantage that the TSM and hardening agent used are not made for adhesion of semiconductor chips, so impurities contained in the paste accelerate corrosion of the aluminum electrode and cause disconnection. This often caused defects, and the reliability of the device was still inferior to that of the AIJ-si eutectic method. In addition, in recent years, IC/LS
With the increase in the size of semiconductor chips such as I and LEDs and the appearance of various frames such as Cu materials, a decrease in the adhesive strength of the chips has become a problem, and there has been a demand for the development of an insulating paste with high adhesive strength.

The present invention was made in view of the above circumstances and drawbacks, and
The purpose of the present invention is to provide a highly reliable semiconductor element that has excellent moisture resistance and adhesion 1, does not cause disconnection defects due to corrosion of aluminum electrodes, and reduces warpage of large chips.

[Structure of the Invention] (Means for Solving the Problems) As a result of intensive research to achieve the above object, the present inventor has achieved the following by using the resin composition described below.
The inventors have found that the above object can be achieved and have completed the present invention. That is, the present invention provides a semiconductor chip and a lead frame using a resin composition containing (A) an epoxy compound, (B) a curing agent, (C) an epoxy resin having a benzophenone imide group, and (D) an insulating powder. This is a semiconductor element whose f4 characteristic is to adhesively fix and seal with resin.

The details of the present invention will be explained below.

Among the industrially produced epoxy compounds (A) that can be effectively used in the present invention, there are the following. For example, Epicote 827, 828, 8
34,1001,1002゜1007.1009 (manufactured by Shell Chemical Co., Ltd., trade name), DER330,331,33
2,334,335°336.337.660 (manufactured by Dow Chemical Company, trade name), Araldite GY250,
260°280.6071.6084.6097°60
99 (manufactured by Ciba Geigy, product name), BPI-REZ
510.5101 (manufactured by JONE DABNEY, product name), Epicron 810° 1000.1010.30
10 (manufactured by Dainippon Ink Chemical Co., Ltd., trade name), EP series manufactured by Asahi Denka Co., Ltd., etc. Furthermore, the epoxy compound has an average number of epoxy groups of 3 or more and a molecular weight of 5.
For example, by using a novolak epoxy resin that satisfies this condition, the adhesive strength at high temperature (350° C.) can be further improved. Examples of novolac epoxy resins include Araldite EPN-1138, 1139°ECN1273,
1280.1299 (manufactured by Ciba Geigy, product name>,
DEN431.438 (manufactured by Dow Chemical Company, trade name), Epicote 152°154 (manufactured by Shell Chemical Company, trade name), ERR-0100, ERRB-0447, ERL
B-0488 (manufactured by Union Carbide, trade name),
Examples include the EOCN series manufactured by Nippon Kayaku Co., Ltd.

These epoxy compounds may be used alone or in combination of two or more. Furthermore, the above epoxy compound may be diluted with a monofunctional low viscosity epoxy compound.

As the curing agent (B) used in the present invention, any curing agent that can be used as a curing agent for ordinary epoxy resins can be used. Examples of these hardening agents include imidazole compounds, phenol compounds, polyamine compounds, acid anhydride compounds, and the like, which may be used alone or in combination of two or more.

The epoxy resin (C) having a benzophenone imide group used in the present invention includes those having an epoxy group and a benzophenone imide group in the compound, for example, those having the following structural formula having a benzophenone imide group in the resin skeleton. Things can be used.

The blending ratio of the epoxy resin having a benzophenone imide group is the total amount of resin components excluding the insulating powder [(A) ÷
It is desirable to contain 5 to 80 fi amount % with respect to (B) + (C) 1. If the blending amount is 5 wt % ungrooved, it will not be effective in improving the adhesive strength, and if it exceeds aol amount % This is not preferable because it tends to have poor reactivity.

<D) The insulating powder used in the present invention preferably does not contain impurity ions such as alkali metals and halogen ions. If necessary, wash this with ion-exchanged water or ion-exchange resin to remove impurities. . Examples of such insulating powders include non-oxide ceramic powders such as carborundum, boron carbide, boron nitride, aluminum nitride, and titanium nitride, and oxide powders such as berylum, magnesium, aluminum, titanium, and silicon. These may be used alone or in combination of two or more.
It is preferable that these insulating powders have an average particle size of 10 μm or less; if the average particle size exceeds 10 μm, the composition will not become paste-like and the coating performance will deteriorate. .

For the resin composition used in the present invention, an organic solvent can be used as necessary to adjust the viscosity.

Examples of the organic solvent include methyl cellosolve, ethyl cellosolve, butyl cellosolve, their acetates, diethylene glycol diethyl ether, and the like, and these can be used alone or in combination of two or more.

The resin composition used in the present invention contains an epoxy compound, a curing agent, an epoxy resin having a benzophenone imide group, and an insulating powder as essential components, but defoaming may be carried out as necessary unless it contradicts the purpose of the present invention. Agents, coupling agents, curing catalysts, and other additives can be added and blended.
This resin composition is prepared by blending an epoxy compound, a curing agent, an epoxy resin having a benzophenone imide group, an insulating powder, and each component of the song in accordance with a conventional method, thoroughly mixing the components, and then kneading the composition using, for example, three rolls. After that, it can be manufactured by degassing under reduced pressure.

In the semiconductor element of the present invention, the syringe is filled with the above-mentioned resin composition and discharged onto the lead frame using a dispenser, the semiconductor chip and the lead frame are adhesively fixed, wire bonding is performed, and the sealing resin is applied. Semiconductor devices can be manufactured by sealing.

(Example) Next, the present invention will be explained by Examples, but the present invention is not limited by these Examples. Parts by weight.

Example l Epoxy resin EP4400 (manufactured by Jiryukasha, trade name) 7
．． Part 6, marcarinic force of rose hydroxystyrene - M (
(manufactured by Maruzen Petrochemical Co., Ltd., trade name) 5.6 parts, 0.2 parts of an epoxy resin having a benzophenone imide group, 10.4 parts of r-glycidoxypropyltrimethoxysilane, and 4.0 parts of diethylene glycol diethyl ether. ,1
A dissolution reaction was carried out for 1 hour at 0G"C to obtain a viscous brown resin. To 27.8 parts of this resin, 0.006 parts of imidazole compound 2PH2-CN (manufactured by Shikoku Kasei Kogyo Co., Ltd., trade name) was added as a catalyst. and 30 parts of silica powder to produce a resin composition (A).

Example 2 20.0 parts of epoxy resin Epicoat 828 (manufactured by Shell Chemical Co., Ltd., trade name), 0.1 part of an epoxy resin having a benzophenone imide group, and 4.0 parts of diethylene glycol diethyl ether were heated at 100'C for 1 hour. A dissolution reaction was performed to obtain a viscous brown resin.

A resin composition (B) was prepared by mixing 27.8 parts of this resin with 0.006 parts of imidazole compound 2PH2-CN (mentioned above) as a catalyst and 30 parts of silica powder.

Example 3 10.0 parts of epoxy resin Epicoat 828 (mentioned above),
POCN103S (manufactured by Nippon Kapowder Co., Ltd., product name) 10.0
Part, epoxy resin having benzophenone imide group 0
．． 1 part and 4.0 parts of butyl cellosolve at 100°C.
A dissolution reaction was carried out for 1 hour to obtain a viscous brown resin.
2PH2-CN (
Prepare the resin composition (C) by mixing 0.006 parts of the above) and 30 parts of silica powder.

Comparative Example A commercially available epoxy resin-based solvent-based conductive paste for semiconductors (D) was obtained.

Resin compositions (A) and (B) of Examples SI to 3.

Using conductive paste (C) and comparative example (D), a semiconductor chip and a lead frame were connected, wire bonding was performed, and then resin sealing was performed with a sealant to manufacture semiconductor elements. .

An adhesion test was conducted on this semiconductor element, and the results were comparable to those of the comparative example.

Regarding moisture resistance, we conducted a moisture resistance test (PCT) in water vapor at a temperature of 121°C and a pressure of 2 atm, and a humidity resistance test (bias-PCT) in water vapor at a temperature of 120°C and a pressure of 2 atm by applying an applied voltage of 15 V DC. conducted and evaluated. Sixty semiconductor devices were each used in this test, and the number of defects occurring over time was measured. The evaluation method was to determine that the product was defective when the open or leakage current due to corrosion of the aluminum electrode constituting the semiconductor-hydrogen element increased to 500% or more of the allowable value. The moisture resistance results are shown in Table 1, and the remarkable effects of the present invention were confirmed. Furthermore, warping of the large-sized chip (4 x 121 m) bonded was confirmed, but it was found to be extremely good.

Table 1 (Units) The semiconductor element of the present invention has excellent moisture resistance and adhesion, is free from disconnection defects due to corrosion of aluminum ti+, and is highly reliable with reduced warpage of the semiconductor chip.

[Effect of the invention]

Claims (1)

[Claims] 1. Semiconductor chips and leads using a resin composition containing (A) an epoxy compound, (B) a curing agent, (C) an epoxy resin having a benzophenone imide group, and (D) an insulating powder. A semiconductor element characterized by being adhesively fixed to a frame and sealed with resin.