JPH03129741A - Ｍｏｓ型半導体装置の製造方法 - Google Patents

Ｍｏｓ型半導体装置の製造方法

Info

Publication number
JPH03129741A
JPH03129741A JP2206100A JP20610090A JPH03129741A JP H03129741 A JPH03129741 A JP H03129741A JP 2206100 A JP2206100 A JP 2206100A JP 20610090 A JP20610090 A JP 20610090A JP H03129741 A JPH03129741 A JP H03129741A
Authority
JP
Japan
Prior art keywords
gate
insulating film
source
drain
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2206100A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0465531B2 (cs
Inventor
Takeya Ezaki
豪弥 江崎
Onori Ishikawa
石河　大典
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11072477A external-priority patent/JPS5444482A/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2206100A priority Critical patent/JPH03129741A/ja
Publication of JPH03129741A publication Critical patent/JPH03129741A/ja
Publication of JPH0465531B2 publication Critical patent/JPH0465531B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2206100A 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法 Granted JPH03129741A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2206100A JPH03129741A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11072477A JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture
JP2206100A JPH03129741A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP11072477A Division JPS5444482A (en) 1977-09-14 1977-09-14 Mos type semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPH03129741A true JPH03129741A (ja) 1991-06-03
JPH0465531B2 JPH0465531B2 (cs) 1992-10-20

Family

ID=26450280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2206100A Granted JPH03129741A (ja) 1977-09-14 1990-08-02 Ｍｏｓ型半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPH03129741A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003509861A (ja) * 1999-09-17 2003-03-11 テレフオンアクチーボラゲツト エル エム エリクソン 半導体装置の隔離のため浅いトレンチ内に深いトレンチを形成するための自己整合方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003509861A (ja) * 1999-09-17 2003-03-11 テレフオンアクチーボラゲツト エル エム エリクソン 半導体装置の隔離のため浅いトレンチ内に深いトレンチを形成するための自己整合方法

Also Published As

Publication number Publication date
JPH0465531B2 (cs) 1992-10-20

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