JPH0311095B2 - - Google Patents
Info
- Publication number
- JPH0311095B2 JPH0311095B2 JP4411986A JP4411986A JPH0311095B2 JP H0311095 B2 JPH0311095 B2 JP H0311095B2 JP 4411986 A JP4411986 A JP 4411986A JP 4411986 A JP4411986 A JP 4411986A JP H0311095 B2 JPH0311095 B2 JP H0311095B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- gaas
- effect
- functional element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000000694 effects Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 7
- 229910052720 vanadium Inorganic materials 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LMRFGCUCLQUNCZ-UHFFFAOYSA-N hydrogen peroxide hydrofluoride Chemical compound F.OO LMRFGCUCLQUNCZ-UHFFFAOYSA-N 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4411986A JPS62202562A (ja) | 1986-03-03 | 1986-03-03 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4411986A JPS62202562A (ja) | 1986-03-03 | 1986-03-03 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62202562A JPS62202562A (ja) | 1987-09-07 |
| JPH0311095B2 true JPH0311095B2 (enrdf_load_stackoverflow) | 1991-02-15 |
Family
ID=12682717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4411986A Granted JPS62202562A (ja) | 1986-03-03 | 1986-03-03 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62202562A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10330159A1 (de) * | 2003-07-04 | 2005-02-03 | Zf Friedrichshafen Ag | Lastschaltgetriebe für Baumaschinen, insbesondere für Baggerlader und Telehandler |
| DE10330157A1 (de) * | 2003-07-04 | 2005-02-03 | Zf Friedrichshafen Ag | Lastschaltgetriebe für Baumaschinen, insbesondere für Baggerlader und Telehandler |
-
1986
- 1986-03-03 JP JP4411986A patent/JPS62202562A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62202562A (ja) | 1987-09-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5362677A (en) | Method for producing a field effect transistor with a gate recess structure | |
| JPH02148740A (ja) | 半導体装置及びその製造方法 | |
| US5409849A (en) | Method of manufacturing a compound semiconductor device having gate electrode self-aligned to source and drain electrodes | |
| JPH022179A (ja) | メタル・セミコンダクタ・ｆｅｔ | |
| JP2560993B2 (ja) | 化合物半導体装置の製造方法 | |
| KR930024194A (ko) | 반도체 장치 | |
| JPS6159666B2 (enrdf_load_stackoverflow) | ||
| JPH0311095B2 (enrdf_load_stackoverflow) | ||
| US4136352A (en) | Field-effect structures | |
| JP2569626B2 (ja) | 半導体集積回路装置 | |
| JPS6279673A (ja) | 電界効果トランジスタ | |
| JPH01202870A (ja) | 電界効果トランジスタ | |
| JPS58192359A (ja) | 半導体装置 | |
| JPH0715018A (ja) | 電界効果トランジスタ | |
| JPH05152340A (ja) | 電界効果トランジスタ | |
| JPH06132320A (ja) | 半導体集積回路 | |
| JPS6255303B2 (enrdf_load_stackoverflow) | ||
| JPS62243359A (ja) | 化合物半導体装置 | |
| JPS58148466A (ja) | 半導体装置 | |
| JPS60137071A (ja) | シヨツトキゲ−ト電界効果トランジスタ | |
| JPS5850434B2 (ja) | 電界効果トランジスタの製造方法 | |
| JPS62213168A (ja) | 電界効果トランジスタ | |
| JPS63160280A (ja) | 砒化ガリウム半導体デバイス | |
| JPS5958871A (ja) | 電界効果トランジスタ | |
| JPH01270360A (ja) | 半導体素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |