JPH029672B2 - - Google Patents

Info

Publication number
JPH029672B2
JPH029672B2 JP59179908A JP17990884A JPH029672B2 JP H029672 B2 JPH029672 B2 JP H029672B2 JP 59179908 A JP59179908 A JP 59179908A JP 17990884 A JP17990884 A JP 17990884A JP H029672 B2 JPH029672 B2 JP H029672B2
Authority
JP
Japan
Prior art keywords
reaction tank
cylindrical
raw material
photoreceptor
material gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59179908A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6157946A (ja
Inventor
Noboru Ebara
Toshiro Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59179908A priority Critical patent/JPS6157946A/ja
Publication of JPS6157946A publication Critical patent/JPS6157946A/ja
Publication of JPH029672B2 publication Critical patent/JPH029672B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214Silicon-based
    • G03G5/08278Depositing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP59179908A 1984-08-29 1984-08-29 アモルフアスシリコン感光体製造用装置 Granted JPS6157946A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59179908A JPS6157946A (ja) 1984-08-29 1984-08-29 アモルフアスシリコン感光体製造用装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59179908A JPS6157946A (ja) 1984-08-29 1984-08-29 アモルフアスシリコン感光体製造用装置

Publications (2)

Publication Number Publication Date
JPS6157946A JPS6157946A (ja) 1986-03-25
JPH029672B2 true JPH029672B2 (enrdf_load_stackoverflow) 1990-03-02

Family

ID=16074010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59179908A Granted JPS6157946A (ja) 1984-08-29 1984-08-29 アモルフアスシリコン感光体製造用装置

Country Status (1)

Country Link
JP (1) JPS6157946A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51112263A (en) * 1975-03-28 1976-10-04 Hitachi Ltd Semiconductor surface processor base
JPS5546056A (en) * 1978-09-29 1980-03-31 Hitachi Ltd Electronic fuel injection device

Also Published As

Publication number Publication date
JPS6157946A (ja) 1986-03-25

Similar Documents

Publication Publication Date Title
JPH04264715A (ja) 縦型バッチ処理装置
JPS61110768A (ja) アモルフアスシリコン感光体製造用装置
JP2006279058A (ja) 熱処理装置および半導体装置の製造方法
JPS63262472A (ja) 膜形成方法
JP2013065872A (ja) 半導体装置の製造方法および基板処理装置
JPH029672B2 (enrdf_load_stackoverflow)
JPH029673B2 (enrdf_load_stackoverflow)
JPH024976A (ja) 薄膜形成方法
JPS59217614A (ja) アモルフアスシリコン成膜装置
JPS5871369A (ja) 感光体の製造装置
JPS6353854B2 (enrdf_load_stackoverflow)
JPS6153431B2 (enrdf_load_stackoverflow)
JPS5931977B2 (ja) プラズマcvd装置
JP3034139B2 (ja) アモルファスシリコン感光体及び薄膜形成装置
JPH0438449B2 (enrdf_load_stackoverflow)
JPH0338586B2 (enrdf_load_stackoverflow)
JP2958850B2 (ja) プラズマcvd装置およびそれを用いるアモルファスシリコン感光体の製造方法
JP2920637B2 (ja) グロー放電分解装置
JPH0462168B2 (enrdf_load_stackoverflow)
JPH0520502B2 (enrdf_load_stackoverflow)
JPH0545672B2 (enrdf_load_stackoverflow)
JP3072664B2 (ja) 縦型減圧気相成長装置
JPH1027761A (ja) 化学反応装置
JPH0543095Y2 (enrdf_load_stackoverflow)
JPS5990631A (ja) プラズマcvd装置