JPH029464B2 - - Google Patents
Info
- Publication number
- JPH029464B2 JPH029464B2 JP55048776A JP4877680A JPH029464B2 JP H029464 B2 JPH029464 B2 JP H029464B2 JP 55048776 A JP55048776 A JP 55048776A JP 4877680 A JP4877680 A JP 4877680A JP H029464 B2 JPH029464 B2 JP H029464B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion layer
- diode
- mask
- conductivity type
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 31
- 230000015556 catabolic process Effects 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 239000010410 layer Substances 0.000 description 20
- 230000000694 effects Effects 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000003513 alkali Substances 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000008859 change Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/983—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7910065A FR2454704A1 (fr) | 1979-04-20 | 1979-04-20 | Diode a avalanche de type planar a tension de claquage comprise entre 4 et 8 volts |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55141762A JPS55141762A (en) | 1980-11-05 |
| JPH029464B2 true JPH029464B2 (US07935154-20110503-C00018.png) | 1990-03-02 |
Family
ID=9224549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4877680A Granted JPS55141762A (en) | 1979-04-20 | 1980-04-15 | Electron avalanche diode and method of fabricating same |
Country Status (5)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0043734B1 (en) * | 1980-07-08 | 1985-10-16 | Fujitsu Limited | Avalanche photodiodes |
| NL187942C (nl) * | 1980-08-18 | 1992-02-17 | Philips Nv | Zenerdiode en werkwijze ter vervaardiging daarvan. |
| US4999683A (en) * | 1988-12-30 | 1991-03-12 | Sanken Electric Co., Ltd. | Avalanche breakdown semiconductor device |
| US5150176A (en) * | 1992-02-13 | 1992-09-22 | Motorola, Inc. | PN junction surge suppressor structure with moat |
| US20050275065A1 (en) * | 2004-06-14 | 2005-12-15 | Tyco Electronics Corporation | Diode with improved energy impulse rating |
| JP6642507B2 (ja) * | 2016-10-18 | 2020-02-05 | 株式会社デンソー | 半導体装置およびその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5144387A (ja) * | 1974-10-01 | 1976-04-15 | Satoji Shimizu | Tajikutatsupumashiin no tatsupusetsusonkenchisochi |
| JPS5264883A (en) * | 1975-11-26 | 1977-05-28 | Fuji Electric Co Ltd | Semiconductor element |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| US4030117A (en) * | 1975-03-10 | 1977-06-14 | International Telephone And Telegraph Corporation | Zener diode |
| US4075649A (en) * | 1975-11-25 | 1978-02-21 | Siemens Corporation | Single chip temperature compensated reference diode and method for making same |
| CA1080836A (en) * | 1977-09-21 | 1980-07-01 | Paul P. Webb | Multi-element avalanche photodiode having reduced electrical noise |
-
1979
- 1979-04-20 FR FR7910065A patent/FR2454704A1/fr active Granted
-
1980
- 1980-03-28 DE DE8080400420T patent/DE3069258D1/de not_active Expired
- 1980-03-28 EP EP80400420A patent/EP0018862B1/fr not_active Expired
- 1980-04-15 US US06/140,486 patent/US4323909A/en not_active Expired - Lifetime
- 1980-04-15 JP JP4877680A patent/JPS55141762A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5144387A (ja) * | 1974-10-01 | 1976-04-15 | Satoji Shimizu | Tajikutatsupumashiin no tatsupusetsusonkenchisochi |
| JPS5264883A (en) * | 1975-11-26 | 1977-05-28 | Fuji Electric Co Ltd | Semiconductor element |
Also Published As
| Publication number | Publication date |
|---|---|
| EP0018862A1 (fr) | 1980-11-12 |
| JPS55141762A (en) | 1980-11-05 |
| US4323909A (en) | 1982-04-06 |
| FR2454704B1 (US07935154-20110503-C00018.png) | 1982-06-04 |
| DE3069258D1 (en) | 1984-10-31 |
| EP0018862B1 (fr) | 1984-09-26 |
| FR2454704A1 (fr) | 1980-11-14 |
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