DE3069258D1 - Planar avalanche diode with breakdown voltage between 4 and 8 volts, and method of making it - Google Patents

Planar avalanche diode with breakdown voltage between 4 and 8 volts, and method of making it

Info

Publication number
DE3069258D1
DE3069258D1 DE8080400420T DE3069258T DE3069258D1 DE 3069258 D1 DE3069258 D1 DE 3069258D1 DE 8080400420 T DE8080400420 T DE 8080400420T DE 3069258 T DE3069258 T DE 3069258T DE 3069258 D1 DE3069258 D1 DE 3069258D1
Authority
DE
Germany
Prior art keywords
volts
making
breakdown voltage
avalanche diode
planar avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080400420T
Other languages
English (en)
Inventor
Henri Valdman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Application granted granted Critical
Publication of DE3069258D1 publication Critical patent/DE3069258D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/983—Zener diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE8080400420T 1979-04-20 1980-03-28 Planar avalanche diode with breakdown voltage between 4 and 8 volts, and method of making it Expired DE3069258D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7910065A FR2454704A1 (fr) 1979-04-20 1979-04-20 Diode a avalanche de type planar a tension de claquage comprise entre 4 et 8 volts

Publications (1)

Publication Number Publication Date
DE3069258D1 true DE3069258D1 (en) 1984-10-31

Family

ID=9224549

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080400420T Expired DE3069258D1 (en) 1979-04-20 1980-03-28 Planar avalanche diode with breakdown voltage between 4 and 8 volts, and method of making it

Country Status (5)

Country Link
US (1) US4323909A (de)
EP (1) EP0018862B1 (de)
JP (1) JPS55141762A (de)
DE (1) DE3069258D1 (de)
FR (1) FR2454704A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3172668D1 (en) * 1980-07-08 1985-11-21 Fujitsu Ltd Avalanche photodiodes
NL187942C (nl) * 1980-08-18 1992-02-17 Philips Nv Zenerdiode en werkwijze ter vervaardiging daarvan.
US4999683A (en) * 1988-12-30 1991-03-12 Sanken Electric Co., Ltd. Avalanche breakdown semiconductor device
US5150176A (en) * 1992-02-13 1992-09-22 Motorola, Inc. PN junction surge suppressor structure with moat
US20050275065A1 (en) * 2004-06-14 2005-12-15 Tyco Electronics Corporation Diode with improved energy impulse rating
JP6642507B2 (ja) * 2016-10-18 2020-02-05 株式会社デンソー 半導体装置およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
JPS5144387A (ja) * 1974-10-01 1976-04-15 Satoji Shimizu Tajikutatsupumashiin no tatsupusetsusonkenchisochi
US4030117A (en) * 1975-03-10 1977-06-14 International Telephone And Telegraph Corporation Zener diode
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
JPS5264883A (en) * 1975-11-26 1977-05-28 Fuji Electric Co Ltd Semiconductor element
CA1080836A (en) * 1977-09-21 1980-07-01 Paul P. Webb Multi-element avalanche photodiode having reduced electrical noise

Also Published As

Publication number Publication date
US4323909A (en) 1982-04-06
EP0018862A1 (de) 1980-11-12
JPH029464B2 (de) 1990-03-02
JPS55141762A (en) 1980-11-05
FR2454704A1 (fr) 1980-11-14
EP0018862B1 (de) 1984-09-26
FR2454704B1 (de) 1982-06-04

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