JPH028463B2 - - Google Patents

Info

Publication number

JPH028463B2

JPH028463B2 JP62297362A JP29736287A JPH028463B2 JP H028463 B2 JPH028463 B2 JP H028463B2 JP 62297362 A JP62297362 A JP 62297362A JP 29736287 A JP29736287 A JP 29736287A JP H028463 B2 JPH028463 B2 JP H028463B2

Authority

JP

Japan

Prior art keywords

film

polycrystalline silicon

mosi

electrode

substrate

Prior art date

1987-11-27

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired - Lifetime

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• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
• 239000000758 substrate Substances 0.000 claims description 19
• 239000004065 semiconductor Substances 0.000 claims description 11
• 238000000034 method Methods 0.000 claims description 8
• 238000002844 melting Methods 0.000 claims description 7
• 230000008018 melting Effects 0.000 claims description 7
• 229910021332 silicide Inorganic materials 0.000 claims description 7
• 238000004519 manufacturing process Methods 0.000 claims description 6
• 229910052751 metal Inorganic materials 0.000 claims description 6
• 239000002184 metal Substances 0.000 claims description 6
• 238000010438 heat treatment Methods 0.000 claims description 5
• FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 5
• 239000012535 impurity Substances 0.000 claims description 4
• 230000001590 oxidative effect Effects 0.000 claims description 3
• 238000000151 deposition Methods 0.000 claims 1
• 229910016006 MoSi Inorganic materials 0.000 description 19
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
• 229910052710 silicon Inorganic materials 0.000 description 10
• 239000010703 silicon Substances 0.000 description 10
• 229910052698 phosphorus Inorganic materials 0.000 description 9
• 239000011574 phosphorus Substances 0.000 description 9
• OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
• 238000009792 diffusion process Methods 0.000 description 4
• 230000003647 oxidation Effects 0.000 description 4
• 238000007254 oxidation reaction Methods 0.000 description 4
• 229910004298 SiO 2 Inorganic materials 0.000 description 2
• 230000015572 biosynthetic process Effects 0.000 description 2
• 239000000463 material Substances 0.000 description 2
• 150000002739 metals Chemical class 0.000 description 2
• 239000005360 phosphosilicate glass Substances 0.000 description 2
• 229910020968 MoSi2 Inorganic materials 0.000 description 1
• 238000005275 alloying Methods 0.000 description 1
• -1 and at the same time Chemical compound 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000005530 etching Methods 0.000 description 1
• 229910052758 niobium Inorganic materials 0.000 description 1
• 150000003017 phosphorus Chemical class 0.000 description 1
• 239000003870 refractory metal Substances 0.000 description 1
• 238000003892 spreading Methods 0.000 description 1
• 238000004544 sputter deposition Methods 0.000 description 1
• 229910052715 tantalum Inorganic materials 0.000 description 1
• 238000005979 thermal decomposition reaction Methods 0.000 description 1
• 229910052719 titanium Inorganic materials 0.000 description 1
• 229910052721 tungsten Inorganic materials 0.000 description 1