JPH027534B2 - - Google Patents

Info

Publication number
JPH027534B2
JPH027534B2 JP57146158A JP14615882A JPH027534B2 JP H027534 B2 JPH027534 B2 JP H027534B2 JP 57146158 A JP57146158 A JP 57146158A JP 14615882 A JP14615882 A JP 14615882A JP H027534 B2 JPH027534 B2 JP H027534B2
Authority
JP
Japan
Prior art keywords
mos
fet
current
gate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57146158A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5936423A (ja
Inventor
Hideo Nishijima
Isao Fukushima
Takayasu Ito
Yasunori Kobori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57146158A priority Critical patent/JPS5936423A/ja
Publication of JPS5936423A publication Critical patent/JPS5936423A/ja
Publication of JPH027534B2 publication Critical patent/JPH027534B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Landscapes

  • Electronic Switches (AREA)
JP57146158A 1982-08-25 1982-08-25 電流切り換え回路 Granted JPS5936423A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57146158A JPS5936423A (ja) 1982-08-25 1982-08-25 電流切り換え回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57146158A JPS5936423A (ja) 1982-08-25 1982-08-25 電流切り換え回路

Publications (2)

Publication Number Publication Date
JPS5936423A JPS5936423A (ja) 1984-02-28
JPH027534B2 true JPH027534B2 (nl) 1990-02-19

Family

ID=15401438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57146158A Granted JPS5936423A (ja) 1982-08-25 1982-08-25 電流切り換え回路

Country Status (1)

Country Link
JP (1) JPS5936423A (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01238313A (ja) * 1988-03-18 1989-09-22 Toshiba Corp カレントスイッチ回路
US5008671A (en) * 1988-06-27 1991-04-16 Analog Devices, Incorporated High-speed digital-to-analog converter with BiMOS cell structure
JP2513009B2 (ja) * 1988-12-21 1996-07-03 日本電気株式会社 ディジタル―アナログ変換回路
JPH02179124A (ja) * 1988-12-29 1990-07-12 Nec Corp ディジタル―アナログ変換回路

Also Published As

Publication number Publication date
JPS5936423A (ja) 1984-02-28

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