JPH026237B2 - - Google Patents

Info

Publication number
JPH026237B2
JPH026237B2 JP57037381A JP3738182A JPH026237B2 JP H026237 B2 JPH026237 B2 JP H026237B2 JP 57037381 A JP57037381 A JP 57037381A JP 3738182 A JP3738182 A JP 3738182A JP H026237 B2 JPH026237 B2 JP H026237B2
Authority
JP
Japan
Prior art keywords
layer
type
substrate
semiconductor element
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57037381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58154286A (ja
Inventor
Tatsuyuki Sanada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57037381A priority Critical patent/JPS58154286A/ja
Publication of JPS58154286A publication Critical patent/JPS58154286A/ja
Publication of JPH026237B2 publication Critical patent/JPH026237B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Lasers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP57037381A 1982-03-10 1982-03-10 半導体装置 Granted JPS58154286A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57037381A JPS58154286A (ja) 1982-03-10 1982-03-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57037381A JPS58154286A (ja) 1982-03-10 1982-03-10 半導体装置

Publications (2)

Publication Number Publication Date
JPS58154286A JPS58154286A (ja) 1983-09-13
JPH026237B2 true JPH026237B2 (pt) 1990-02-08

Family

ID=12495941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57037381A Granted JPS58154286A (ja) 1982-03-10 1982-03-10 半導体装置

Country Status (1)

Country Link
JP (1) JPS58154286A (pt)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0285943U (pt) * 1988-12-22 1990-07-06
JPH03291452A (ja) * 1990-04-04 1991-12-20 Rinnai Corp 湯張り装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936263U (ja) * 1982-08-30 1984-03-07 日本電気株式会社 半導体装置
JPS60201382A (ja) * 1984-03-26 1985-10-11 ロ−ム株式会社 発光表示装置
JPS60251654A (ja) * 1984-05-28 1985-12-12 Fujitsu Ltd 半導体装置の製造方法
JPS6169169A (ja) * 1984-09-13 1986-04-09 Agency Of Ind Science & Technol 半導体受光素子
FR2588701B1 (fr) * 1985-10-14 1988-12-30 Bouadma Noureddine Procede de realisation d'une structure integree laser-photodetecteur

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0285943U (pt) * 1988-12-22 1990-07-06
JPH03291452A (ja) * 1990-04-04 1991-12-20 Rinnai Corp 湯張り装置

Also Published As

Publication number Publication date
JPS58154286A (ja) 1983-09-13

Similar Documents

Publication Publication Date Title
JPH0212968A (ja) 集積された多量子井戸光子及び電子デバイス
US5108948A (en) Method of producing a semiconductor device having a disordered superlattice using an epitaxial solid diffusion source
US4509996A (en) Injection laser manufacture
JPH026237B2 (pt)
JP3053357B2 (ja) 平面埋込型レーザダイオードの製造方法
US5478774A (en) Method of fabricating patterned-mirror VCSELs using selective growth
US4957879A (en) Method of making a semiconductor laser using superlattice disordering
US4784967A (en) Method for fabricating a field-effect transistor with a self-aligned gate
JP3526519B2 (ja) 半導体レーザ素子およびその製造方法
US5674779A (en) Method for fabricating a ridge-shaped laser in a channel
JPS5919389A (ja) 半導体装置
JPS6215876A (ja) 半導体発光装置の製造方法
KR950008860B1 (ko) 반도체 장치의 제조방법
JPH023314B2 (pt)
JPH07131110A (ja) 半導体レーザ装置の製造方法
US5026662A (en) Method for fabricating a semiconductor stripe laser
JPS58100480A (ja) 半導体レ−ザ装置
JPH0666317B2 (ja) 半導体装置
JPH0213944B2 (pt)
JPS61270883A (ja) 光半導体装置
JP3014125B2 (ja) 半導体装置およびその製造方法
JPS6045083A (ja) 平面型半導体レ−ザ集積回路装置
JPH0673389B2 (ja) 半導体装置の製造方法
JPH084172B2 (ja) 埋め込み型量子井戸半導体レーザ
GB2123604A (en) Injection laser manufacture