JPH026221B2 - - Google Patents
Info
- Publication number
- JPH026221B2 JPH026221B2 JP56160642A JP16064281A JPH026221B2 JP H026221 B2 JPH026221 B2 JP H026221B2 JP 56160642 A JP56160642 A JP 56160642A JP 16064281 A JP16064281 A JP 16064281A JP H026221 B2 JPH026221 B2 JP H026221B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- single crystal
- oxygen
- crystal silicon
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P36/03—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56160642A JPS5860544A (ja) | 1981-10-06 | 1981-10-06 | 結晶欠陥のゲツタリング法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56160642A JPS5860544A (ja) | 1981-10-06 | 1981-10-06 | 結晶欠陥のゲツタリング法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5860544A JPS5860544A (ja) | 1983-04-11 |
| JPH026221B2 true JPH026221B2 (index.php) | 1990-02-08 |
Family
ID=15719342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56160642A Granted JPS5860544A (ja) | 1981-10-06 | 1981-10-06 | 結晶欠陥のゲツタリング法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5860544A (index.php) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0795550B2 (ja) * | 1986-02-04 | 1995-10-11 | 富士通株式会社 | 半導体装置 |
| JPH10256261A (ja) * | 1997-03-12 | 1998-09-25 | Nec Corp | 半導体装置の製造方法 |
-
1981
- 1981-10-06 JP JP56160642A patent/JPS5860544A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5860544A (ja) | 1983-04-11 |
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