JPS6213815B2 - - Google Patents

Info

Publication number
JPS6213815B2
JPS6213815B2 JP56193529A JP19352981A JPS6213815B2 JP S6213815 B2 JPS6213815 B2 JP S6213815B2 JP 56193529 A JP56193529 A JP 56193529A JP 19352981 A JP19352981 A JP 19352981A JP S6213815 B2 JPS6213815 B2 JP S6213815B2
Authority
JP
Japan
Prior art keywords
single crystal
oxygen
crystal silicon
silicon
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56193529A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5892227A (ja
Inventor
Hirozo Takano
Shigeo Uotani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56193529A priority Critical patent/JPS5892227A/ja
Publication of JPS5892227A publication Critical patent/JPS5892227A/ja
Publication of JPS6213815B2 publication Critical patent/JPS6213815B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P36/03

Landscapes

  • Recrystallisation Techniques (AREA)
JP56193529A 1981-11-28 1981-11-28 結晶欠陥のゲツタリング法 Granted JPS5892227A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56193529A JPS5892227A (ja) 1981-11-28 1981-11-28 結晶欠陥のゲツタリング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56193529A JPS5892227A (ja) 1981-11-28 1981-11-28 結晶欠陥のゲツタリング法

Publications (2)

Publication Number Publication Date
JPS5892227A JPS5892227A (ja) 1983-06-01
JPS6213815B2 true JPS6213815B2 (index.php) 1987-03-28

Family

ID=16309582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56193529A Granted JPS5892227A (ja) 1981-11-28 1981-11-28 結晶欠陥のゲツタリング法

Country Status (1)

Country Link
JP (1) JPS5892227A (index.php)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042838A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 半導体ウェハの処理方法
JPH07118444B2 (ja) * 1984-12-20 1995-12-18 ソニー株式会社 半導体薄膜の熱処理方法
JPH0795550B2 (ja) * 1986-02-04 1995-10-11 富士通株式会社 半導体装置

Also Published As

Publication number Publication date
JPS5892227A (ja) 1983-06-01

Similar Documents

Publication Publication Date Title
DE10131249A1 (de) Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material
JP2998330B2 (ja) Simox基板及びその製造方法
JPS59124136A (ja) 半導体ウエハの処理方法
JPS6031232A (ja) 半導体基体の製造方法
JPS6213815B2 (index.php)
JPS5918196A (ja) 単結晶薄膜の製造方法
JPH026221B2 (index.php)
JPH023539B2 (index.php)
JP3093762B2 (ja) 半導体装置の製造方法
JPH05102035A (ja) 半導体結晶の成長方法
JPS63283013A (ja) 多結晶シリコン薄膜の形成方法
JP3379054B2 (ja) 半導体結晶の製造方法
JPH0810669B2 (ja) Soi膜の形成方法
JPH0635360B2 (ja) 単結晶窒化アルミニウム膜の作製方法
JP3539738B2 (ja) 不純物添加方法
JPS6276514A (ja) 半導体装置の製造方法
JP3024193B2 (ja) 半導体基板の製造方法
JPH03201440A (ja) 半導体基板の裏面歪形成方法
JP2526380B2 (ja) 多層半導体基板の製造方法
JPS6351646A (ja) イントリンシツク・ゲツタリング法
JPH03293718A (ja) シリコン単結晶基板の処理方法
JPS63278217A (ja) 半導体基板の製造方法
JPS58165316A (ja) 半導体装置の製造方法
JPH0795550B2 (ja) 半導体装置
JPS5874033A (ja) 半導体装置の製造方法