JPS5892227A - 結晶欠陥のゲツタリング法 - Google Patents

結晶欠陥のゲツタリング法

Info

Publication number
JPS5892227A
JPS5892227A JP56193529A JP19352981A JPS5892227A JP S5892227 A JPS5892227 A JP S5892227A JP 56193529 A JP56193529 A JP 56193529A JP 19352981 A JP19352981 A JP 19352981A JP S5892227 A JPS5892227 A JP S5892227A
Authority
JP
Japan
Prior art keywords
film
silicon
oxygen
single crystal
amorphous silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56193529A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6213815B2 (index.php
Inventor
Hirozo Takano
高野　博三
Shigeo Uotani
魚谷　重雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56193529A priority Critical patent/JPS5892227A/ja
Publication of JPS5892227A publication Critical patent/JPS5892227A/ja
Publication of JPS6213815B2 publication Critical patent/JPS6213815B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P36/03—

Landscapes

  • Recrystallisation Techniques (AREA)
JP56193529A 1981-11-28 1981-11-28 結晶欠陥のゲツタリング法 Granted JPS5892227A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56193529A JPS5892227A (ja) 1981-11-28 1981-11-28 結晶欠陥のゲツタリング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56193529A JPS5892227A (ja) 1981-11-28 1981-11-28 結晶欠陥のゲツタリング法

Publications (2)

Publication Number Publication Date
JPS5892227A true JPS5892227A (ja) 1983-06-01
JPS6213815B2 JPS6213815B2 (index.php) 1987-03-28

Family

ID=16309582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56193529A Granted JPS5892227A (ja) 1981-11-28 1981-11-28 結晶欠陥のゲツタリング法

Country Status (1)

Country Link
JP (1) JPS5892227A (index.php)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042838A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 半導体ウェハの処理方法
JPS61145818A (ja) * 1984-12-20 1986-07-03 Sony Corp 半導体薄膜の熱処理方法
JPS62179731A (ja) * 1986-02-04 1987-08-06 Fujitsu Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6042838A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 半導体ウェハの処理方法
JPS61145818A (ja) * 1984-12-20 1986-07-03 Sony Corp 半導体薄膜の熱処理方法
JPS62179731A (ja) * 1986-02-04 1987-08-06 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
JPS6213815B2 (index.php) 1987-03-28

Similar Documents

Publication Publication Date Title
JP3182893B2 (ja) 薄膜トランジスタの製造方法
JPS63174355A (ja) 半導体デバイス
JPS6124240A (ja) 半導体基板
US6784072B2 (en) Control of buried oxide in SIMOX
JP2998330B2 (ja) Ｓｉｍｏｘ基板及びその製造方法
JPS59124136A (ja) 半導体ウエハの処理方法
JPS5892227A (ja) 結晶欠陥のゲツタリング法
JPH026221B2 (index.php)
JP2662058B2 (ja) 半導体膜の製造方法
JPH023539B2 (index.php)
JPH07142405A (ja) 多結晶半導体膜およびその成膜方法
JPH11121379A (ja) 多結晶シリコン薄膜の特性改善方法
JP5742119B2 (ja) 磁性半導体用基板、磁性半導体用基板の製造方法及び磁性半導体用基板の製造装置
JP3024193B2 (ja) 半導体基板の製造方法
JPS60164316A (ja) 半導体薄膜の形成方法
JPH03250621A (ja) 半導体膜の製造方法
JPS6276514A (ja) 半導体装置の製造方法
JP3480479B2 (ja) Ｓｏｉ基板の製造方法
JPS6351646A (ja) イントリンシツク・ゲツタリング法
JPS63254720A (ja) 半導体薄膜の形成方法
RU2265912C2 (ru) СПОСОБ ФОРМИРОВАНИЯ ВЫСОКОСОВЕРШЕННЫХ КРЕМНИЕВЫХ ЭПИТАКСИАЛЬНЫХ СТРУКТУР СО СКРЫТЫМИ n+-СЛОЯМИ
JPS63293817A (ja) 半導体装置の製造方法
JPS5856408A (ja) シリコン単結晶膜の成長方法
JPH05315362A (ja) 半導体装置の製造方法及び液晶表示装置
JPS59228713A (ja) 半導体装置の製造方法