JPH0260219B2 - - Google Patents

Info

Publication number
JPH0260219B2
JPH0260219B2 JP61044118A JP4411886A JPH0260219B2 JP H0260219 B2 JPH0260219 B2 JP H0260219B2 JP 61044118 A JP61044118 A JP 61044118A JP 4411886 A JP4411886 A JP 4411886A JP H0260219 B2 JPH0260219 B2 JP H0260219B2
Authority
JP
Japan
Prior art keywords
layer
gallium arsenide
arsenide layer
gate
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP61044118A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62202564A (ja
Inventor
Masahisa Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP61044118A priority Critical patent/JPS62202564A/ja
Publication of JPS62202564A publication Critical patent/JPS62202564A/ja
Publication of JPH0260219B2 publication Critical patent/JPH0260219B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP61044118A 1986-03-03 1986-03-03 ヘテロ接合電界効果トランジスタ Granted JPS62202564A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61044118A JPS62202564A (ja) 1986-03-03 1986-03-03 ヘテロ接合電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61044118A JPS62202564A (ja) 1986-03-03 1986-03-03 ヘテロ接合電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS62202564A JPS62202564A (ja) 1987-09-07
JPH0260219B2 true JPH0260219B2 (cs) 1990-12-14

Family

ID=12682688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61044118A Granted JPS62202564A (ja) 1986-03-03 1986-03-03 ヘテロ接合電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS62202564A (cs)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2615714B2 (ja) * 1987-12-09 1997-06-04 富士通株式会社 ヘテロ接合電界効果トランジスタ
JPH02148740A (ja) * 1988-11-29 1990-06-07 Fujitsu Ltd 半導体装置及びその製造方法
JP2915003B2 (ja) * 1989-06-14 1999-07-05 株式会社日立製作所 電界効果トランジスタの製造方法
US5213011A (en) * 1991-04-05 1993-05-25 Mazda Motor Corporation Power transmission device for vehicle
JP3237503B2 (ja) * 1996-02-19 2001-12-10 日産自動車株式会社 摩擦車式無段変速機
JP3147009B2 (ja) * 1996-10-30 2001-03-19 日本電気株式会社 電界効果トランジスタ及びその製造方法
JP3237573B2 (ja) * 1997-06-05 2001-12-10 日産自動車株式会社 摩擦車式無段変速機
JP3450155B2 (ja) 1997-06-11 2003-09-22 Ｎｅｃエレクトロニクス株式会社 電界効果トランジスタとその製造方法
CN103985747B (zh) * 2014-05-27 2017-03-29 中国科学技术大学 GaAs/AlGaAs半导体异质结结构的霍尔棒及其制作方法

Also Published As

Publication number Publication date
JPS62202564A (ja) 1987-09-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term