JPH0260213B2 - - Google Patents
Info
- Publication number
- JPH0260213B2 JPH0260213B2 JP78386A JP78386A JPH0260213B2 JP H0260213 B2 JPH0260213 B2 JP H0260213B2 JP 78386 A JP78386 A JP 78386A JP 78386 A JP78386 A JP 78386A JP H0260213 B2 JPH0260213 B2 JP H0260213B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- insulating film
- electrode
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 23
- 238000000034 method Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP78386A JPS62159473A (ja) | 1986-01-08 | 1986-01-08 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP78386A JPS62159473A (ja) | 1986-01-08 | 1986-01-08 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62159473A JPS62159473A (ja) | 1987-07-15 |
| JPH0260213B2 true JPH0260213B2 (de) | 1990-12-14 |
Family
ID=11483294
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP78386A Granted JPS62159473A (ja) | 1986-01-08 | 1986-01-08 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62159473A (de) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421950B (zh) * | 2021-06-21 | 2023-04-28 | 安徽华晟新能源科技有限公司 | 太阳能电池片的制造方法 |
-
1986
- 1986-01-08 JP JP78386A patent/JPS62159473A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62159473A (ja) | 1987-07-15 |
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