JPH0255400B2 - - Google Patents

Info

Publication number
JPH0255400B2
JPH0255400B2 JP59150900A JP15090084A JPH0255400B2 JP H0255400 B2 JPH0255400 B2 JP H0255400B2 JP 59150900 A JP59150900 A JP 59150900A JP 15090084 A JP15090084 A JP 15090084A JP H0255400 B2 JPH0255400 B2 JP H0255400B2
Authority
JP
Japan
Prior art keywords
pulling
single crystal
curve
raw material
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59150900A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6131382A (ja
Inventor
Mikio Morioka
Atsushi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP15090084A priority Critical patent/JPS6131382A/ja
Priority to DE8585304484T priority patent/DE3584746D1/de
Priority to EP85304484A priority patent/EP0172621B1/en
Publication of JPS6131382A publication Critical patent/JPS6131382A/ja
Priority to US07/011,428 priority patent/US4783235A/en
Publication of JPH0255400B2 publication Critical patent/JPH0255400B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP15090084A 1984-07-20 1984-07-20 化合物半導体単結晶の引上方法 Granted JPS6131382A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP15090084A JPS6131382A (ja) 1984-07-20 1984-07-20 化合物半導体単結晶の引上方法
DE8585304484T DE3584746D1 (de) 1984-07-20 1985-06-24 Verfahren zur zuechtung eines einkristalls einer halbleiterverbindung.
EP85304484A EP0172621B1 (en) 1984-07-20 1985-06-24 Method for growing a single crystal of compound semiconductor
US07/011,428 US4783235A (en) 1984-07-20 1987-02-03 Method for growing a single crystal of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15090084A JPS6131382A (ja) 1984-07-20 1984-07-20 化合物半導体単結晶の引上方法

Publications (2)

Publication Number Publication Date
JPS6131382A JPS6131382A (ja) 1986-02-13
JPH0255400B2 true JPH0255400B2 (enExample) 1990-11-27

Family

ID=15506833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15090084A Granted JPS6131382A (ja) 1984-07-20 1984-07-20 化合物半導体単結晶の引上方法

Country Status (4)

Country Link
US (1) US4783235A (enExample)
EP (1) EP0172621B1 (enExample)
JP (1) JPS6131382A (enExample)
DE (1) DE3584746D1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62191495A (ja) * 1986-02-14 1987-08-21 Nec Corp 化合物半導体製造方法
JPH0684278B2 (ja) * 1986-05-08 1994-10-26 日本電気株式会社 化合物半導体の製造方法
JP2527718B2 (ja) * 1986-06-30 1996-08-28 三菱化学株式会社 液体カプセル引き上げ法用封止剤及び単結晶の成長方法
JPS6374997A (ja) * 1986-09-19 1988-04-05 Nec Corp 化合物半導体の製造方法
US5125085A (en) * 1989-09-01 1992-06-23 Bull Hn Information Systems Inc. Least recently used replacement level generating apparatus and method
JPH07115985B2 (ja) * 1990-06-29 1995-12-13 日立化成工業株式会社 単結晶の育成方法
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
US5431125A (en) * 1991-06-14 1995-07-11 The United States Of America As Represented By The Secretary Of The Air Force Twin-free crystal growth of III-V semiconductor material
IT1280041B1 (it) * 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
CN1317058A (zh) * 1998-06-26 2001-10-10 Memc电子材料有限公司 用于晶体生长装置的电阻加热器及其使用方法
TW505710B (en) * 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
JP4634553B2 (ja) * 1999-06-08 2011-02-16 シルトロニック・ジャパン株式会社 シリコン単結晶ウエーハおよびその製造方法
US6663709B2 (en) 2001-06-26 2003-12-16 Memc Electronic Materials, Inc. Crystal puller and method for growing monocrystalline silicon ingots
JP4092993B2 (ja) * 2002-09-13 2008-05-28 信越半導体株式会社 単結晶育成方法
JP5161492B2 (ja) 2007-05-31 2013-03-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 シリコン単結晶の製造方法
US9074298B2 (en) 2008-08-18 2015-07-07 Sumco Techxiv Corporation Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingot

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE500569A (enExample) * 1950-01-13
US3496118A (en) * 1966-04-19 1970-02-17 Bell & Howell Co Iiib-vb compounds
DE1934369C3 (de) * 1969-07-07 1974-10-03 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verfahren zum Herstellen von Einkristallen aus HI-V Verbindungen
US4282184A (en) * 1979-10-09 1981-08-04 Siltec Corporation Continuous replenishment of molten semiconductor in a Czochralski-process, single-crystal-growing furnace
DE3069547D1 (en) * 1980-06-26 1984-12-06 Ibm Process for controlling the oxygen content of silicon ingots pulled by the czochralski method
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
JPS6058196B2 (ja) * 1982-06-10 1985-12-18 日本電信電話株式会社 化合物半導体単結晶の引上方法および装置
JPS59121192A (ja) * 1982-12-28 1984-07-13 Toshiba Corp ３−５族化合物半導体単結晶の製造方法
JPS59232995A (ja) * 1983-06-10 1984-12-27 Sumitomo Electric Ind Ltd 引上単結晶の冷却方法

Also Published As

Publication number Publication date
JPS6131382A (ja) 1986-02-13
EP0172621B1 (en) 1991-11-27
EP0172621A3 (en) 1988-03-16
US4783235A (en) 1988-11-08
EP0172621A2 (en) 1986-02-26
DE3584746D1 (de) 1992-01-09

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees