JPH0253950B2 - - Google Patents

Info

Publication number
JPH0253950B2
JPH0253950B2 JP54166535A JP16653579A JPH0253950B2 JP H0253950 B2 JPH0253950 B2 JP H0253950B2 JP 54166535 A JP54166535 A JP 54166535A JP 16653579 A JP16653579 A JP 16653579A JP H0253950 B2 JPH0253950 B2 JP H0253950B2
Authority
JP
Japan
Prior art keywords
layer
forming
type
groove
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54166535A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5688365A (en
Inventor
Takashi Matsumoto
Kunihiko Wada
Tsutomu Ogawa
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16653579A priority Critical patent/JPS5688365A/ja
Publication of JPS5688365A publication Critical patent/JPS5688365A/ja
Publication of JPH0253950B2 publication Critical patent/JPH0253950B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP16653579A 1979-12-21 1979-12-21 Manufacture of semiconductor device Granted JPS5688365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16653579A JPS5688365A (en) 1979-12-21 1979-12-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16653579A JPS5688365A (en) 1979-12-21 1979-12-21 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5688365A JPS5688365A (en) 1981-07-17
JPH0253950B2 true JPH0253950B2 (cs) 1990-11-20

Family

ID=15833085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16653579A Granted JPS5688365A (en) 1979-12-21 1979-12-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5688365A (cs)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5489587A (en) * 1977-12-27 1979-07-16 Fujitsu Ltd Mos field effect type transistor
JPS5492074A (en) * 1977-12-29 1979-07-20 Nippon Telegr & Teleph Corp <Ntt> Mis field effect transistor and its manufacture

Also Published As

Publication number Publication date
JPS5688365A (en) 1981-07-17

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