JPH0253513B2 - - Google Patents

Info

Publication number
JPH0253513B2
JPH0253513B2 JP62160425A JP16042587A JPH0253513B2 JP H0253513 B2 JPH0253513 B2 JP H0253513B2 JP 62160425 A JP62160425 A JP 62160425A JP 16042587 A JP16042587 A JP 16042587A JP H0253513 B2 JPH0253513 B2 JP H0253513B2
Authority
JP
Japan
Prior art keywords
oxide film
etching
sccm
silicon
chf
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP62160425A
Other languages
English (en)
Japanese (ja)
Other versions
JPS644482A (en
Inventor
Tetsuhiko Sanpei
Toshihiko Fukuyama
Akira Hasegawa
Kazuo Maeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Japan Inc
Original Assignee
Applied Materials Japan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Japan Inc filed Critical Applied Materials Japan Inc
Priority to JP62160425A priority Critical patent/JPS644482A/ja
Publication of JPS644482A publication Critical patent/JPS644482A/ja
Publication of JPH0253513B2 publication Critical patent/JPH0253513B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/283—

Landscapes

  • ing And Chemical Polishing (AREA)
JP62160425A 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon Granted JPS644482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62160425A JPS644482A (en) 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160425A JPS644482A (en) 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon

Publications (2)

Publication Number Publication Date
JPS644482A JPS644482A (en) 1989-01-09
JPH0253513B2 true JPH0253513B2 (enExample) 1990-11-16

Family

ID=15714649

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160425A Granted JPS644482A (en) 1987-06-26 1987-06-26 High-selectivity dry etching method for oxide film on silicon

Country Status (1)

Country Link
JP (1) JPS644482A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0945896B1 (en) * 1996-10-11 2005-08-10 Tokyo Electron Limited Plasma etching method

Also Published As

Publication number Publication date
JPS644482A (en) 1989-01-09

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees