JPH025302B2 - - Google Patents
Info
- Publication number
- JPH025302B2 JPH025302B2 JP57002120A JP212082A JPH025302B2 JP H025302 B2 JPH025302 B2 JP H025302B2 JP 57002120 A JP57002120 A JP 57002120A JP 212082 A JP212082 A JP 212082A JP H025302 B2 JPH025302 B2 JP H025302B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- field effect
- effect transistor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 178
- 230000005669 field effect Effects 0.000 claims description 52
- 239000012535 impurity Substances 0.000 claims description 38
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 20
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910007709 ZnTe Inorganic materials 0.000 claims description 4
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical group [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical group [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000370 acceptor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010000117 Abnormal behaviour Diseases 0.000 description 1
- 206010060904 Freezing phenomenon Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005574 cross-species transmission Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP212082A JPS58119671A (ja) | 1982-01-09 | 1982-01-09 | 電界効果トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP212082A JPS58119671A (ja) | 1982-01-09 | 1982-01-09 | 電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58119671A JPS58119671A (ja) | 1983-07-16 |
| JPH025302B2 true JPH025302B2 (zh) | 1990-02-01 |
Family
ID=11520485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP212082A Granted JPS58119671A (ja) | 1982-01-09 | 1982-01-09 | 電界効果トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58119671A (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58170071A (ja) * | 1982-03-31 | 1983-10-06 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ |
| JPS5932173A (ja) * | 1982-08-16 | 1984-02-21 | Toshiba Corp | 電界効果トランジスタの製造方法 |
| US4583105A (en) * | 1982-12-30 | 1986-04-15 | International Business Machines Corporation | Double heterojunction FET with ohmic semiconductor gate and controllable low threshold voltage |
| JPS60263476A (ja) * | 1984-06-12 | 1985-12-26 | Sony Corp | 半導体装置の製法 |
| JPS60263475A (ja) * | 1984-06-12 | 1985-12-26 | Sony Corp | 半導体装置 |
| US4729000A (en) * | 1985-06-21 | 1988-03-01 | Honeywell Inc. | Low power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gates |
| JPH0824131B2 (ja) * | 1985-10-07 | 1996-03-06 | 株式会社日立製作所 | 電界効果トランジスタ |
| JP2659181B2 (ja) * | 1986-05-08 | 1997-09-30 | 日本電気株式会社 | 半導体装置 |
| JPH02111073A (ja) * | 1988-10-20 | 1990-04-24 | Fujitsu Ltd | 絶縁ゲート電界効果トランジスタおよびその集積回路装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5161265A (en) * | 1974-11-25 | 1976-05-27 | Handotai Kenkyu Shinkokai | 335 zokukagobutsuhandotaisoshi |
| JPS55160473A (en) * | 1979-03-28 | 1980-12-13 | Thomson Csf | Semiconductor device and method of fabricating same |
| JPS5851574A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | 半導体装置 |
-
1982
- 1982-01-09 JP JP212082A patent/JPS58119671A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5161265A (en) * | 1974-11-25 | 1976-05-27 | Handotai Kenkyu Shinkokai | 335 zokukagobutsuhandotaisoshi |
| JPS55160473A (en) * | 1979-03-28 | 1980-12-13 | Thomson Csf | Semiconductor device and method of fabricating same |
| JPS5851574A (ja) * | 1981-09-22 | 1983-03-26 | Fujitsu Ltd | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58119671A (ja) | 1983-07-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4755857A (en) | Heterostructure semiconductor device | |
| TW201611276A (zh) | 熱離子-過驅動穿隧場效應電晶體及其製造與操作方法 | |
| US4556895A (en) | Field-effect transistor having a channel region of a Group III-V compound semiconductor and a Group IV semiconductor | |
| US4825274A (en) | Bi-CMOS semiconductor device immune to latch-up | |
| KR100542963B1 (ko) | 전계 효과 트랜지스터 | |
| TWI529935B (zh) | 功率絕緣閘極場效電晶體 | |
| JP2000196089A (ja) | 半導体装置 | |
| US20180012980A1 (en) | Lateral insulated gate bipolar transistor | |
| JPH024140B2 (zh) | ||
| JPH06120520A (ja) | 非線形の伝達特性をもつ電界効果トランジスタ | |
| US4605945A (en) | Semiconductor device | |
| JPS5922367A (ja) | 半導体装置 | |
| US7525136B2 (en) | JFET device with virtual source and drain link regions and method of fabrication | |
| JPH025302B2 (zh) | ||
| Nemirovsky et al. | n‐channel insulated‐gate field‐effect transistors in Hg1− xCdxTe with x= 0.215 | |
| US20220157978A1 (en) | p-GaN HIGH ELECTRON MOBILITY TRANSISTOR | |
| JPS62274783A (ja) | 半導体装置 | |
| US7772620B2 (en) | Junction field effect transistor using a silicon on insulator architecture | |
| JP2655594B2 (ja) | 集積型半導体装置 | |
| JPH0354868B2 (zh) | ||
| JPH0459785B2 (zh) | ||
| JPH10107274A (ja) | トンネルトランジスタ及びその製造方法 | |
| JP2827595B2 (ja) | 半導体装置 | |
| JPH04369272A (ja) | 複合化ダイオード | |
| JPH1050730A (ja) | トンネルトランジスタおよびその製造方法 |