JPH02500823A - 反応容器の各種反応ガス用ガス入口 - Google Patents
反応容器の各種反応ガス用ガス入口Info
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- JPH02500823A JPH02500823A JP63505415A JP50541588A JPH02500823A JP H02500823 A JPH02500823 A JP H02500823A JP 63505415 A JP63505415 A JP 63505415A JP 50541588 A JP50541588 A JP 50541588A JP H02500823 A JPH02500823 A JP H02500823A
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- 239000007789 gas Substances 0.000 title claims description 50
- 238000006243 chemical reaction Methods 0.000 title claims description 23
- 238000013459 approach Methods 0.000 claims 1
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07K—PEPTIDES
- C07K14/00—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof
- C07K14/005—Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from viruses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/10—Mixing gases with gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07K—PEPTIDES
- C07K16/00—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies
- C07K16/08—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from viruses
- C07K16/10—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from viruses from RNA viruses
- C07K16/1081—Togaviridae, e.g. flavivirus, rubella virus, hog cholera virus
- C07K16/109—Hepatitis C virus; Hepatitis G virus
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- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
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- C12N7/00—Viruses; Bacteriophages; Compositions thereof; Preparation or purification thereof
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- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
- C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
- C12Q1/70—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving virus or bacteriophage
- C12Q1/701—Specific hybridization probes
- C12Q1/706—Specific hybridization probes for hepatitis
- C12Q1/707—Specific hybridization probes for hepatitis non-A, non-B Hepatitis, excluding hepatitis D
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
- A61K38/00—Medicinal preparations containing peptides
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61K—PREPARATIONS FOR MEDICAL, DENTAL OR TOILETRY PURPOSES
- A61K39/00—Medicinal preparations containing antigens or antibodies
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- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12N—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA
- C12N2770/00—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA ssRNA viruses positive-sense
- C12N2770/00011—Details
- C12N2770/24011—Flaviviridae
- C12N2770/24211—Hepacivirus, e.g. hepatitis C virus, hepatitis G virus
- C12N2770/24221—Viruses as such, e.g. new isolates, mutants or their genomic sequences
-
- C—CHEMISTRY; METALLURGY
- C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
- C12N—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA
- C12N2770/00—MICROORGANISMS OR ENZYMES; COMPOSITIONS THEREOF; PROPAGATING, PRESERVING, OR MAINTAINING MICROORGANISMS; MUTATION OR GENETIC ENGINEERING; CULTURE MEDIA ssRNA viruses positive-sense
- C12N2770/00011—Details
- C12N2770/24011—Flaviviridae
- C12N2770/24211—Hepacivirus, e.g. hepatitis C virus, hepatitis G virus
- C12N2770/24222—New viral proteins or individual genes, new structural or functional aspects of known viral proteins or genes
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Genetics & Genomics (AREA)
- Virology (AREA)
- Immunology (AREA)
- Wood Science & Technology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Zoology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Proteomics, Peptides & Aminoacids (AREA)
- Biophysics (AREA)
- Molecular Biology (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Medicinal Chemistry (AREA)
- Communicable Diseases (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Biotechnology (AREA)
- Metallurgy (AREA)
- General Engineering & Computer Science (AREA)
- Microbiology (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Gastroenterology & Hepatology (AREA)
- Biomedical Technology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。
Description
【発明の詳細な説明】
発明の名称
反応容器の各種反応ガス用ガス入口
技術分野
本発明は、反応容器の断面より本質的に小さい断面の供給管を備え、高い流速で
ガスを流す反応容器の各種反応ガス用ガス入口に関する。
先行技術
かかるガス入口は例えばMOCVD反応管やその他の半導体製造用反応管でも必
要となる。その際一般に発生する問題として、断面の比較的狭い供給管を通して
供給した単数又は複数のガス流をできるだけ均一に死容積なしに大きな横断面に
拡散させねばならない。これは特にガス流の「切換え」によりできるだけ「鮮鋭
」な膜境界を生成すべき場合大切である。
発明の説明
本発明は、請求の範囲1の前提部分に記載した反応容器の各種反応ガス用ガス入
口を、単数又は複数のガス流ができるだけ均一に死容積なしに比較的大きな横断
面に拡散できるよう改良することを課題とする。
この課題の本発明による解決法がその諸展開とともに請求の範囲に明示しである
。
本発明によれば、ガス入口は二次曲面状内側輪郭の部分を有し、該部分は断面を
反応容器の断面に適合させ、貫流させる反応容器の一端に配置しである。個々の
供給管は二次曲面状内側輪郭を有する部分の概ね焦点で合流し、供給管のガス流
出口は二次曲面状部分の頂点を向いている。
これにより、供給管のガス流出口から高速で流出する「薄い」ガス噴流が二次曲
面状内側輪郭により°「幾何光学の法則に事実上従って」均一に死容積なしに拡
散される。
本発明の諸展開が従属請求の範囲に明示しである。
請求の範囲2に明示した供給管の放射状配置により、拡散ガス流の均一性を乱す
ことなく複数のガス種を(同時及び/又は「逐次」)導入することができる。
実際的用途に関し、二次曲面状部分の内側輪郭、つまり二次曲面形状を半球に近
づけると、拡散ガス噴流の均一性が十二分に得られる。
請求の範囲4に明示した措置により、ガス流は反応管の断面全体に噴霧され、従
って均一化が一層進む。
図面の簡単な説明
以下図面を参考に本発明の1実施例を詳しく説明する。図は本発明によるガス入
口の横断面を示す。
図面中に=単位で記入した寸法は単なる1例と理解すべきであり、本発明を限定
するものでないことをはっきり指摘しておく。
実施例の説明
本発明によるガス入口は本体1を有し、これにフランジ2が設けである。フラン
ジ2は本体1を図示省略した反応管、例えば同じ日に提出した特許出願rMOc
VD装置用石英ガラス反応管」に記載しであるような反応管と結合するのに役立
つ。
本体1内に設けた凹部3が「後側」閉鎖面4を有し、その形状は図示実施例の場
合半球形である。
更にガス供給管が放射状に配置して設けであるが、そのうち図面には2本の導管
5.6のみ図示しである。
供給管5,6が流出ロア、8を有し、これは半球面4のほぼ中心に位置する。流
出口の縁が「切欠」いであるので、流出ガス流は一部「噴霧」される。
本発明によるガス入口は次のように働く:流出ロア又は8から高速で流出するガ
ス流は穴の縁構造により一部噴霧されて面4の範囲に衝突する。高速で流出する
ガス流はこの面4で「幾何光学の法則に事実上従って」反射し、その結果均一に
拡散され、穴7.8から「向流で」流出するガス流により再び噴霧され、そして
フランジ2の穴から図示省略した反応管に流入する。
以上1実施例に基づき、一般的発明思想を制限することなく本発明を説明したが
、その枠内で各種の変形態様も勿論可能である。
例えば、球形面に代え円錐切断面(二次曲面状内側輪郭)、例えば放物面も使用
することができる。しかし本件の場合、幾何光学の方から知られているこの有利
な改良球面がもたらす利点は小さい。
ガス送入管は任意の数に高めることができる。放射状配置によりどのガス流も条
件が同じになり、特にガスが断面全体に均一に分布することになる。
従って本発明によるガス入口は迅速に「切換え」ねばならない各種ガス流を連続
して送入するのに適しているだけでなく、均一に拡散させ十分に混合しなげれば
ならない複数のガス流を同時に送入するのにも適している。
国際調査報告
国際調査報告
Cミεε00399
SA 22940
Claims (4)
- 1.反応容器の断面より本質的に小さい断面の供給管を備え、高い流速でガスを 流す反応容器の各種反応ガス用ガス入口において、 −ガス入口が二次曲面状内側輪郭の部分を有し、その断面が反応容器の断面に適 合しており、該部分が、貫流させる反応容器の一端に配置してある;一個々の供 給管が、二次曲面状内側輪郭を有する部分の概ね焦点で合流している; 一供給管のガス流出口が二次曲面状部分の頂点を向いている 以上の特徴の組合せを特徴とするガス入口。
- 2.請求の範囲1記載のガス入口において、供給管を「放射状」に配置したこと を特徴とするガス入口。
- 3.請求の範囲1又は2記載のガス入口において、二次曲面形状を半球に近づけ たことを特徴とするガス入口。
- 4.請求の範囲1乃至3のいずれか1項記載のガス入口において、供給管のガス 流出口がガス流を噴霧することを特徴とするガス入口。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19873721637 DE3721637A1 (de) | 1987-06-30 | 1987-06-30 | Gaseinlass fuer eine mehrzahl verschiedener reaktionsgase in reaktionsgefaesse |
DE3721637.6 | 1987-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02500823A true JPH02500823A (ja) | 1990-03-22 |
JP2668258B2 JP2668258B2 (ja) | 1997-10-27 |
Family
ID=6330611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63505415A Expired - Fee Related JP2668258B2 (ja) | 1987-06-30 | 1988-06-30 | 反応容器の各種反応ガス用ガス入口 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5441703A (ja) |
EP (1) | EP0324811B1 (ja) |
JP (1) | JP2668258B2 (ja) |
DE (2) | DE3721637A1 (ja) |
WO (1) | WO1989000080A1 (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US598630A (en) * | 1898-02-08 | Steam-separator | ||
DE493645C (de) * | 1927-07-09 | 1930-03-08 | Universum Film A G | OElabscheider fuer eine Einrichtung zum Erzeugen und Befeuchten der Kuehlluft fuer Kinofilme |
FR648275A (fr) * | 1928-01-03 | 1928-12-07 | Procédé et appareil pour la fabrication des émulsions ou des mélanges de deux ou plusieurs fluides | |
US2205336A (en) * | 1938-12-13 | 1940-06-18 | Beach Russ Company | Oil and water separator |
NL110397C (ja) * | 1943-03-19 | |||
NL151263B (nl) * | 1966-06-22 | 1976-11-15 | Shell Int Research | Kokervormige vloeistof-gascontactinrichting. |
US4002432A (en) * | 1975-04-25 | 1977-01-11 | Exxon Research And Engineering Company | Vapor-liquid separator |
JPS5264069A (en) * | 1975-11-25 | 1977-05-27 | Furukawa Electric Co Ltd:The | Apparatus for separating materials that are pneumatically conveyed |
US4141701A (en) * | 1975-11-28 | 1979-02-27 | Lone Star Steel Company | Apparatus and process for the removal of pollutant material from gas streams |
JPS5537863A (en) * | 1978-09-08 | 1980-03-17 | Meidensha Electric Mfg Co Ltd | Auxiliary power feeder for switching |
SU1210884A1 (ru) * | 1983-04-28 | 1986-02-15 | Ивано-Франковский завод тонкого органического синтеза | Реактор-смеситель непрерывного действи |
SU1329801A1 (ru) * | 1985-07-02 | 1987-08-15 | Сумский филиал Специального конструкторского бюро по созданию воздушных и газовых турбохолодильных машин | Устройство дл очистки газа |
JPS6233516A (ja) * | 1985-08-07 | 1987-02-13 | Toshiba Corp | 湿分分離器 |
-
1987
- 1987-06-30 DE DE19873721637 patent/DE3721637A1/de not_active Withdrawn
-
1988
- 1988-06-30 JP JP63505415A patent/JP2668258B2/ja not_active Expired - Fee Related
- 1988-06-30 DE DE88905673T patent/DE3869758D1/de not_active Expired - Fee Related
- 1988-06-30 WO PCT/DE1988/000399 patent/WO1989000080A1/de active IP Right Grant
- 1988-06-30 EP EP88905673A patent/EP0324811B1/de not_active Expired - Lifetime
-
1994
- 1994-03-29 US US08/219,415 patent/US5441703A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2668258B2 (ja) | 1997-10-27 |
EP0324811B1 (de) | 1992-04-01 |
DE3869758D1 (ja) | 1992-05-07 |
DE3721637A1 (de) | 1989-01-12 |
WO1989000080A1 (en) | 1989-01-12 |
US5441703A (en) | 1995-08-15 |
EP0324811A1 (de) | 1989-07-26 |
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