JP2668258B2 - 反応容器の各種反応ガス用ガス入口 - Google Patents

反応容器の各種反応ガス用ガス入口

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JP2668258B2
JP2668258B2 JP63505415A JP50541588A JP2668258B2 JP 2668258 B2 JP2668258 B2 JP 2668258B2 JP 63505415 A JP63505415 A JP 63505415A JP 50541588 A JP50541588 A JP 50541588A JP 2668258 B2 JP2668258 B2 JP 2668258B2
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gas
gas inlet
reaction vessel
section
cross
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JPH02500823A (ja
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ホルガー ユルゲンセン
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アイクストロン ゲーエムベーハー
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    • C07K14/005Peptides having more than 20 amino acids; Gastrins; Somatostatins; Melanotropins; Derivatives thereof from viruses
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01FMIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10Mixing gases with gases
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J4/00Feed or outlet devices; Feed or outlet control devices
    • B01J4/001Feed or outlet devices as such, e.g. feeding tubes
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    • C07ORGANIC CHEMISTRY
    • C07KPEPTIDES
    • C07K16/00Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies
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    • C12Q1/00Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/70Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving virus or bacteriophage
    • C12Q1/701Specific hybridization probes
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
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    • C12N2770/00011Details
    • C12N2770/24011Flaviviridae
    • C12N2770/24211Hepacivirus, e.g. hepatitis C virus, hepatitis G virus
    • C12N2770/24222New viral proteins or individual genes, new structural or functional aspects of known viral proteins or genes

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  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Description

【発明の詳細な説明】 技術分野 本発明は、反応容器の断面より本質的に小さい断面の
供給管を備え、高い流速でガスを流す反応容器の各種反
応ガス用ガス入口に関する。
先行技術 かかるガス入口は例えばMOCVD反応管やその他の半導
体製造用反応管でも必要となる。その際一般に発生する
問題として、断面の比較的狭い供給管を通して供給した
単数又は複数のガス流をできるだけ均一に死容積なしに
大きな横断面に拡散させねばならない。これは特にガス
流の「切換え」によりできるだけ「鮮鋭」な膜境界を生
成すべき場合大切である。
発明の説明 本発明は、請求の範囲1の前提部分に記載した反応容
器の各種反応ガス用ガス入口を、単数又は複数のガス流
ができるだけ均一に死容積なしに比較的大きな横断面に
拡散できるよう改良することを課題とする。
この課題の本発明による解決法がその諸展開とともに
請求の範囲に明示してある。
本発明によれば、ガス入口は二次曲面状内側輪郭の部
分を有し、該部分は断面を反応容器の断面に適合させ、
貫流させる反応容器の一端に配置してある。個々の供給
管は二次曲面状内側輪郭を有する部分の概ね焦点で合流
し、供給管のガス流出口は二次曲面状部分の頂点を向い
ている。
これにより、供給管のガス流出口から高速で流出する
「薄い」ガス噴流が二次曲面状内側輪郭により「幾何光
学の法則に事実上従って」均一に死容積なしに拡散され
る。
本発明の諸展開が従属請求の範囲に明示してある。
請求の範囲2に明示した供給管の放射状配置により、
拡散ガス流の均一性を乱すことなく複数のガス種を(同
時及び/又は「逐次」)導入することができる。
実際的用途に関し、二次曲面状部分の内側輪郭、つま
り二次曲面形状を半球に近づけると、拡散ガス噴流の均
一性が十二分に得られる。
請求の範囲4に明示した措置により、ガス流は反応管
の断面全体に噴霧され、従って均一化が一層進む。
図面の簡単な説明 以下図面を参考に本発明の1実施例を詳しく説明す
る。図は本発明によるガス入口の横断面を示す。
図面中にmm単位で記入した寸法は単なる1例と理解す
べきであり、本発明を限定するものでないことをはっき
り指摘しておく。
実施例の説明 本発明によるガス入口は本体1を有し、これにフラン
ジ2が設けてある。フランジ2は本体1を図示省略した
反応管、例えば同じ日に提出した特許出願「MOCVD装置
用石英ガラス反応管」に記載してあるような反応管と結
合するのに役立つ。
本体1内に設けた凹部3が「後側」閉鎖面4を有し、
その形状は図示実施例の場合半球形である。
更にガス供給管が放射状に配置して設けてあるが、そ
のうち図面には2本の導管5,6のみ図示してある.供給
管5,6が流出口7,8を有し、これは半球面4のほぼ中心に
位置する。流出口の縁が「切欠」いてあるので、流出ガ
ス流は一部「噴霧」される。
本発明によるガス入口は次のように働く: 流出口7又は8から高速で流出するガス流は穴の縁構
造により一部噴霧されて面4の範囲に衝突する。高速で
流出するガス流はこの面4で「幾何光学の法則に事実上
従って」反射し、その結果均一に拡散され、穴7,8から
「向流で」流出するガス流により再び噴霧され、そして
フランジ2の穴から図示省略した反応管に流入する。
以上1実施例に基づき、一般的発明思想を制限するこ
となく本発明を説明したが、その枠内で各種の変形態様
も勿論可能である。
例えば、球形面に代え円錐切断面(二次曲面状内側輪
郭)、例えば放物面も使用することができる。しかし本
件の場合、幾何光学の方から知られているこの有利な改
良球面がもたらす利点は小さい。
ガス送入管は任意の数に高めることができる。放射状
配置によりどのガス流も条件が同じになり、特にガスが
断面全体に均一に分布することになる。
従って本発明によるガス入口は迅速に「切換え」ねば
ならない各種ガス流を連続して送入するのに適している
だけでなく、均一に拡散させ十分に混合しなければなら
ない複数のガス流を同時に送入するのにも適している。
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/205 H01L 21/205

Claims (4)

    (57)【特許請求の範囲】
  1. 【請求項1】反応容器の断面より本質的に小さい断面の
    供給管を備え、高い流速でガスを流す反応容器の各種反
    応ガス用ガス入口において、 −ガス入口が二次曲面状内側輪郭の部分を有し、その断
    面が反応容器の断面に適合しており、該部分が、貫流さ
    せる反応容器の一端に配置してある; −個々の供給管が、二次曲面状内側輪郭を有する部分の
    概ね焦点で合流している; −供給管のガス流出口が二次曲面状部分の頂点を向いて
    いる 以上の特徴の組合せを特徴とするガス入口。
  2. 【請求項2】請求の範囲1記載のガス入口において、供
    給管を「放射状」に配置したことを特徴とするガス入
    口。
  3. 【請求項3】請求の範囲1又は2記載のガス入口におい
    て、二次曲面形状を半球に近づけたことを特徴とするガ
    ス入口。
  4. 【請求項4】請求の範囲1乃至3のいずれか1項記載の
    ガス入口において、供給管のガス流出口がガス流を噴霧
    することを特徴とするガス入口。
JP63505415A 1987-06-30 1988-06-30 反応容器の各種反応ガス用ガス入口 Expired - Fee Related JP2668258B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19873721637 DE3721637A1 (de) 1987-06-30 1987-06-30 Gaseinlass fuer eine mehrzahl verschiedener reaktionsgase in reaktionsgefaesse
DE3721637.6 1987-06-30

Publications (2)

Publication Number Publication Date
JPH02500823A JPH02500823A (ja) 1990-03-22
JP2668258B2 true JP2668258B2 (ja) 1997-10-27

Family

ID=6330611

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Application Number Title Priority Date Filing Date
JP63505415A Expired - Fee Related JP2668258B2 (ja) 1987-06-30 1988-06-30 反応容器の各種反応ガス用ガス入口

Country Status (5)

Country Link
US (1) US5441703A (ja)
EP (1) EP0324811B1 (ja)
JP (1) JP2668258B2 (ja)
DE (2) DE3721637A1 (ja)
WO (1) WO1989000080A1 (ja)

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EP0324811B1 (de) 1992-04-01
DE3869758D1 (ja) 1992-05-07
DE3721637A1 (de) 1989-01-12
WO1989000080A1 (en) 1989-01-12
US5441703A (en) 1995-08-15
EP0324811A1 (de) 1989-07-26

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