JPH0245714B2 - - Google Patents
Info
- Publication number
- JPH0245714B2 JPH0245714B2 JP56164875A JP16487581A JPH0245714B2 JP H0245714 B2 JPH0245714 B2 JP H0245714B2 JP 56164875 A JP56164875 A JP 56164875A JP 16487581 A JP16487581 A JP 16487581A JP H0245714 B2 JPH0245714 B2 JP H0245714B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- etching
- aluminum
- pressure
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H10P50/267—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19661680A | 1980-10-14 | 1980-10-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57123978A JPS57123978A (en) | 1982-08-02 |
| JPH0245714B2 true JPH0245714B2 (member.php) | 1990-10-11 |
Family
ID=22726125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56164875A Granted JPS57123978A (en) | 1980-10-14 | 1981-10-14 | Alyminum etching method and gas mixture |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS57123978A (member.php) |
| DE (1) | DE3140675A1 (member.php) |
| GB (1) | GB2087315B (member.php) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4505782A (en) * | 1983-03-25 | 1985-03-19 | Lfe Corporation | Plasma reactive ion etching of aluminum and aluminum alloys |
| JPH061770B2 (ja) * | 1984-01-30 | 1994-01-05 | 株式会社日立製作所 | ドライエツチング方法 |
| GB2171360A (en) * | 1985-02-19 | 1986-08-28 | Oerlikon Buehrle Inc | Etching aluminum/copper alloy films |
| JPS61235576A (ja) * | 1985-04-10 | 1986-10-20 | Tokuda Seisakusho Ltd | ドライエツチング装置 |
| JP2681058B2 (ja) * | 1986-04-03 | 1997-11-19 | アネルバ株式会社 | ドライエッチング方法 |
| JPH0727890B2 (ja) * | 1986-09-19 | 1995-03-29 | 日本電気株式会社 | ドライエツチング方法 |
| DE3821207A1 (de) * | 1988-06-23 | 1989-12-28 | Leybold Ag | Anordnung zum beschichten eines substrats mit dielektrika |
| DE3940820C2 (de) * | 1989-12-11 | 1998-07-09 | Leybold Ag | Verfahren zur Behandlung von Werkstücken durch reaktives Ionenätzen |
| US5397433A (en) * | 1993-08-20 | 1995-03-14 | Vlsi Technology, Inc. | Method and apparatus for patterning a metal layer |
| JP6061384B2 (ja) * | 2013-01-17 | 2017-01-18 | 国立大学法人静岡大学 | アルミ・樹脂接合体の製造方法及びアルミ・樹脂接合体 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54158343A (en) * | 1978-06-05 | 1979-12-14 | Hitachi Ltd | Dry etching method for al and al alloy |
| US4182646A (en) * | 1978-07-27 | 1980-01-08 | John Zajac | Process of etching with plasma etch gas |
| US4256534A (en) * | 1978-07-31 | 1981-03-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| US4208241A (en) * | 1978-07-31 | 1980-06-17 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
| FR2432560A1 (fr) * | 1978-08-02 | 1980-02-29 | Texas Instruments Inc | Procede de decapage de metaux, en particulier d'aluminium, au plasma de tetrachlorure de silicium |
| US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
-
1981
- 1981-10-13 DE DE19813140675 patent/DE3140675A1/de active Granted
- 1981-10-13 GB GB8140894A patent/GB2087315B/en not_active Expired
- 1981-10-14 JP JP56164875A patent/JPS57123978A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3140675A1 (de) | 1982-06-16 |
| GB2087315A (en) | 1982-05-26 |
| GB2087315B (en) | 1984-07-18 |
| JPS57123978A (en) | 1982-08-02 |
| DE3140675C2 (member.php) | 1991-03-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4380488A (en) | Process and gas mixture for etching aluminum | |
| US4030967A (en) | Gaseous plasma etching of aluminum and aluminum oxide | |
| US4324611A (en) | Process and gas mixture for etching silicon dioxide and silicon nitride | |
| US4148705A (en) | Gas plasma reactor and process | |
| US6127273A (en) | Process for anisotropic plasma etching of different substrates | |
| JP2748886B2 (ja) | プラズマ処理装置 | |
| US4182646A (en) | Process of etching with plasma etch gas | |
| JP2009530851A5 (member.php) | ||
| EP1027483A1 (en) | Method of polishing cvd diamond films by oxygen plasma | |
| JP2000323454A (ja) | 基板の異方性エッチング方法 | |
| JPH038580B2 (member.php) | ||
| KR20060010845A (ko) | 기판에서 포토레지스트를 제거하는 방법 | |
| JPH0245714B2 (member.php) | ||
| JP2001160551A (ja) | 滑らかな表面を有するようにポリシリコンをエッチングする方法 | |
| US3723277A (en) | Method for the production of masks in the manufacture of semiconductor components | |
| JPH08330278A (ja) | 表面処理方法および表面処理装置 | |
| JPS59222933A (ja) | エツチング方法 | |
| JP3164188B2 (ja) | プラズマ処理装置 | |
| JP2691018B2 (ja) | プラズマエッチング法 | |
| JP4865951B2 (ja) | プラズマエッチング方法 | |
| JPH0494121A (ja) | ドライエツチング方法 | |
| JPS61130493A (ja) | ドライエツチング装置 | |
| JPH03155621A (ja) | ドライエッチング方法 | |
| US7192875B1 (en) | Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens | |
| JP2754966B2 (ja) | ドライエッチング方法 |