JPS57123978A - Alyminum etching method and gas mixture - Google Patents

Alyminum etching method and gas mixture

Info

Publication number
JPS57123978A
JPS57123978A JP16487581A JP16487581A JPS57123978A JP S57123978 A JPS57123978 A JP S57123978A JP 16487581 A JP16487581 A JP 16487581A JP 16487581 A JP16487581 A JP 16487581A JP S57123978 A JPS57123978 A JP S57123978A
Authority
JP
Japan
Prior art keywords
alyminum
gas mixture
etching method
etching
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16487581A
Other languages
Japanese (ja)
Other versions
JPH0245714B2 (en
Inventor
Efu Raikarudaafua Richiyaado
Shii Buougaru Daian
Shii Tangu Marian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BURANSON INTERN PURAZUMA CORP
Original Assignee
BURANSON INTERN PURAZUMA CORP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BURANSON INTERN PURAZUMA CORP filed Critical BURANSON INTERN PURAZUMA CORP
Publication of JPS57123978A publication Critical patent/JPS57123978A/en
Publication of JPH0245714B2 publication Critical patent/JPH0245714B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP16487581A 1980-10-14 1981-10-14 ARUMINIUMUNOETSUCHINGUHOHOOYOBIETSUCHINGUYOGASUKONGOBUTSU Expired - Lifetime JPH0245714B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US19661680A 1980-10-14 1980-10-14

Publications (2)

Publication Number Publication Date
JPS57123978A true JPS57123978A (en) 1982-08-02
JPH0245714B2 JPH0245714B2 (en) 1990-10-11

Family

ID=22726125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16487581A Expired - Lifetime JPH0245714B2 (en) 1980-10-14 1981-10-14 ARUMINIUMUNOETSUCHINGUHOHOOYOBIETSUCHINGUYOGASUKONGOBUTSU

Country Status (3)

Country Link
JP (1) JPH0245714B2 (en)
DE (1) DE3140675A1 (en)
GB (1) GB2087315B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158630A (en) * 1984-01-30 1985-08-20 Hitachi Ltd Dry etching method
JPS61235576A (en) * 1985-04-10 1986-10-20 Tokuda Seisakusho Ltd Dry etching device
JPS62232926A (en) * 1986-04-03 1987-10-13 Anelva Corp Dry etching
JPS6376437A (en) * 1986-09-19 1988-04-06 Nec Corp Dry etching
JP2014136366A (en) * 2013-01-17 2014-07-28 National Univ Corp Shizuoka Univ Method for manufacturing an aluminum-resin joined body and aluminum-resin joined body

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505782A (en) * 1983-03-25 1985-03-19 Lfe Corporation Plasma reactive ion etching of aluminum and aluminum alloys
GB2171360A (en) * 1985-02-19 1986-08-28 Oerlikon Buehrle Inc Etching aluminum/copper alloy films
DE3821207A1 (en) * 1988-06-23 1989-12-28 Leybold Ag ARRANGEMENT FOR COATING A SUBSTRATE WITH DIELECTRICS
DE3940820C2 (en) * 1989-12-11 1998-07-09 Leybold Ag Process for the treatment of workpieces by reactive ion etching
US5397433A (en) * 1993-08-20 1995-03-14 Vlsi Technology, Inc. Method and apparatus for patterning a metal layer

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158343A (en) * 1978-06-05 1979-12-14 Hitachi Ltd Dry etching method for al and al alloy
US4182646A (en) * 1978-07-27 1980-01-08 John Zajac Process of etching with plasma etch gas
US4256534A (en) * 1978-07-31 1981-03-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4208241A (en) * 1978-07-31 1980-06-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
FR2432560A1 (en) * 1978-08-02 1980-02-29 Texas Instruments Inc PROCESS FOR STRIPPING METALS, ESPECIALLY ALUMINUM, WITH SILICON TETRACHLORIDE PLASMA
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60158630A (en) * 1984-01-30 1985-08-20 Hitachi Ltd Dry etching method
JPS61235576A (en) * 1985-04-10 1986-10-20 Tokuda Seisakusho Ltd Dry etching device
JPS64471B2 (en) * 1985-04-10 1989-01-06 Tokuda Seisakusho
JPS62232926A (en) * 1986-04-03 1987-10-13 Anelva Corp Dry etching
JPS6376437A (en) * 1986-09-19 1988-04-06 Nec Corp Dry etching
JP2014136366A (en) * 2013-01-17 2014-07-28 National Univ Corp Shizuoka Univ Method for manufacturing an aluminum-resin joined body and aluminum-resin joined body

Also Published As

Publication number Publication date
DE3140675C2 (en) 1991-03-07
GB2087315A (en) 1982-05-26
JPH0245714B2 (en) 1990-10-11
DE3140675A1 (en) 1982-06-16
GB2087315B (en) 1984-07-18

Similar Documents

Publication Publication Date Title
AU6980081A (en) Gas scrubbing apparatus and method
GB2037966B (en) Method of gas separation
JPS57111206A (en) Ozonizer and method
GB2082314B (en) Combustion method and apparatus
NZ198870A (en) Method and apparatus for manufacturing synthesis gas
JPS55139816A (en) Method of separating gas
PT73505B (en) Gas analyser
JPS57203455A (en) Gas mixing and preparing method
GB2155805B (en) Gas separation process and apparatus
JPS54147175A (en) Gas separation method and apparatus
GB2148127B (en) Gas humidifying apparatus and method
DE3376145D1 (en) Gas sensor and method of using same
DE3371870D1 (en) Gas scrubbing method and device
GB2154465B (en) Gas separation method and apparatus
JPS57123978A (en) Alyminum etching method and gas mixture
ZA818123B (en) Keyboard and method of making keyboard
GB2078755B (en) Oxytocin analogues and method for preparation thereof
DE3167680D1 (en) Gas wiping apparatus and method of using
DE3375001D1 (en) Contact keyboard and method of its manufacture
JPS57162632A (en) Method of separating gas
JPS56126920A (en) Method of mutually reducing diffusion
JPS57142254A (en) Gas pasturization method
GB2076023B (en) Gas carburising
JPS55165160A (en) Gas separator and its operating method
ZA812394B (en) Gas wiping apparatus and method of using