FR2432560A1 - PROCESS FOR STRIPPING METALS, ESPECIALLY ALUMINUM, WITH SILICON TETRACHLORIDE PLASMA - Google Patents

PROCESS FOR STRIPPING METALS, ESPECIALLY ALUMINUM, WITH SILICON TETRACHLORIDE PLASMA

Info

Publication number
FR2432560A1
FR2432560A1 FR7917142A FR7917142A FR2432560A1 FR 2432560 A1 FR2432560 A1 FR 2432560A1 FR 7917142 A FR7917142 A FR 7917142A FR 7917142 A FR7917142 A FR 7917142A FR 2432560 A1 FR2432560 A1 FR 2432560A1
Authority
FR
France
Prior art keywords
plasma
silicon tetrachloride
especially aluminum
stripping
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7917142A
Other languages
French (fr)
Other versions
FR2432560B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2432560A1 publication Critical patent/FR2432560A1/en
Application granted granted Critical
Publication of FR2432560B1 publication Critical patent/FR2432560B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

L'invention a pour objet un procédé de décapage d'un matériau métallique, et notamment de l'aluminium, en utilisant un plasma gazeux. Le plasma cet celui d'un composé de silicium contenant du chlore mais ne contenant aucun atome de carbone. Les composés utilisés pour former le plasma comprennent notamment SiCl4 , SiCl3 H, SiCl2 H2 et leurs mélanges. Le plasma peut éventuellement être dilué par un gaz inerte et peut également contenir de l'oxygène ce qui permet le décapage du chrome et du vanadium. Décapage de l'aluminium sur un substrat de silicium pour la fabrication de dispositifs semiconducteurs.The subject of the invention is a method for pickling a metallic material, and in particular aluminum, using a gas plasma. The plasma is that of a silicon compound containing chlorine but not containing any carbon atoms. The compounds used to form the plasma include in particular SiCl4, SiCl3 H, SiCl2 H2 and their mixtures. The plasma can optionally be diluted with an inert gas and can also contain oxygen which allows the stripping of chromium and vanadium. Etching of aluminum on a silicon substrate for the fabrication of semiconductor devices.

FR7917142A 1978-08-02 1979-07-02 PROCESS FOR STRIPPING METALS, ESPECIALLY ALUMINUM, WITH SILICON TETRACHLORIDE PLASMA Granted FR2432560A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93045378A 1978-08-02 1978-08-02

Publications (2)

Publication Number Publication Date
FR2432560A1 true FR2432560A1 (en) 1980-02-29
FR2432560B1 FR2432560B1 (en) 1983-10-14

Family

ID=25459347

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7917142A Granted FR2432560A1 (en) 1978-08-02 1979-07-02 PROCESS FOR STRIPPING METALS, ESPECIALLY ALUMINUM, WITH SILICON TETRACHLORIDE PLASMA

Country Status (4)

Country Link
JP (1) JPS6032716B2 (en)
DE (1) DE2930200A1 (en)
FR (1) FR2432560A1 (en)
GB (1) GB2026922B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158873A (en) * 1980-05-14 1981-12-07 Hitachi Ltd Dry etching method
GB2087315B (en) * 1980-10-14 1984-07-18 Branson Int Plasma Plasma etching of aluminum
US4373990A (en) * 1981-01-08 1983-02-15 Bell Telephone Laboratories, Incorporated Dry etching aluminum
JPS59132626A (en) * 1983-01-19 1984-07-30 Mitsubishi Electric Corp Plasma etching
JPS61144026A (en) * 1984-12-17 1986-07-01 Toshiba Corp Dry etching method
DE3935189A1 (en) * 1989-10-23 1991-05-08 Leybold Ag Ionic etching substrates of silicon di:oxide coated - with poly-silicon or silicide layers-using etching gas of chlorine, silicon chloride and nitrogen
AU3320399A (en) 1998-06-04 1999-12-16 Corning O.T.I. S.P.A. Method of manufacturing indiffused optical waveguide structures in a substrate
GB201811873D0 (en) * 2018-07-20 2018-09-05 Oxford Instruments Nanotechnology Tools Ltd Semiconductor etching methods

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996037269A1 (en) 1995-05-24 1996-11-28 Gierveld Beheer B.V. Sport device
WO1996037209A1 (en) 1995-05-23 1996-11-28 Indena S.P.A. Use of flavanolignanes for the preparation of medicaments with antiproliferative activity in uterus, ovary and breast

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996037209A1 (en) 1995-05-23 1996-11-28 Indena S.P.A. Use of flavanolignanes for the preparation of medicaments with antiproliferative activity in uterus, ovary and breast
WO1996037269A1 (en) 1995-05-24 1996-11-28 Gierveld Beheer B.V. Sport device

Also Published As

Publication number Publication date
DE2930200A1 (en) 1980-02-21
JPS5521585A (en) 1980-02-15
JPS6032716B2 (en) 1985-07-30
FR2432560B1 (en) 1983-10-14
GB2026922B (en) 1982-12-01
GB2026922A (en) 1980-02-13

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