JPS5521585A - Metal material etching by using gas plasma - Google Patents

Metal material etching by using gas plasma

Info

Publication number
JPS5521585A
JPS5521585A JP8434579A JP8434579A JPS5521585A JP S5521585 A JPS5521585 A JP S5521585A JP 8434579 A JP8434579 A JP 8434579A JP 8434579 A JP8434579 A JP 8434579A JP S5521585 A JPS5521585 A JP S5521585A
Authority
JP
Japan
Prior art keywords
metal material
gas plasma
material etching
etching
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8434579A
Other languages
Japanese (ja)
Other versions
JPS6032716B2 (en
Inventor
Aaru Reinbaagu Aran
Aaru Pootaa Baanon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS5521585A publication Critical patent/JPS5521585A/en
Publication of JPS6032716B2 publication Critical patent/JPS6032716B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP8434579A 1978-08-02 1979-07-03 Microcircuit formation method for semiconductor devices Expired JPS6032716B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US93045378A 1978-08-02 1978-08-02
US930453 1978-08-02

Publications (2)

Publication Number Publication Date
JPS5521585A true JPS5521585A (en) 1980-02-15
JPS6032716B2 JPS6032716B2 (en) 1985-07-30

Family

ID=25459347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8434579A Expired JPS6032716B2 (en) 1978-08-02 1979-07-03 Microcircuit formation method for semiconductor devices

Country Status (4)

Country Link
JP (1) JPS6032716B2 (en)
DE (1) DE2930200A1 (en)
FR (1) FR2432560A1 (en)
GB (1) GB2026922B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132626A (en) * 1983-01-19 1984-07-30 Mitsubishi Electric Corp Plasma etching
JPS61144026A (en) * 1984-12-17 1986-07-01 Toshiba Corp Dry etching method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56158873A (en) * 1980-05-14 1981-12-07 Hitachi Ltd Dry etching method
GB2087315B (en) * 1980-10-14 1984-07-18 Branson Int Plasma Plasma etching of aluminum
US4373990A (en) * 1981-01-08 1983-02-15 Bell Telephone Laboratories, Incorporated Dry etching aluminum
DE3935189A1 (en) * 1989-10-23 1991-05-08 Leybold Ag Ionic etching substrates of silicon di:oxide coated - with poly-silicon or silicide layers-using etching gas of chlorine, silicon chloride and nitrogen
CA2273646A1 (en) 1998-06-04 1999-12-04 Carlo Carmannini Method of manufacturing indiffused optical waveguide structures in a substrate
GB201811873D0 (en) * 2018-07-20 2018-09-05 Oxford Instruments Nanotechnology Tools Ltd Semiconductor etching methods

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1274549B (en) 1995-05-23 1997-07-17 Indena Spa USE OF FLAVANOLIGNANI FOR THE PREPARATION OF MEDICATIONS FOR ANTI-PROLIFERATIVE ACTIVITY IN CANCER OF THE UTERUS, OVARIAN AND BREAST
WO1996037269A1 (en) 1995-05-24 1996-11-28 Gierveld Beheer B.V. Sport device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132626A (en) * 1983-01-19 1984-07-30 Mitsubishi Electric Corp Plasma etching
JPS61144026A (en) * 1984-12-17 1986-07-01 Toshiba Corp Dry etching method

Also Published As

Publication number Publication date
JPS6032716B2 (en) 1985-07-30
GB2026922B (en) 1982-12-01
FR2432560B1 (en) 1983-10-14
FR2432560A1 (en) 1980-02-29
DE2930200A1 (en) 1980-02-21
GB2026922A (en) 1980-02-13

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